Si1077X Datasheet

Si1077X
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) () Max.
ID (A)
0.078 at VGS = - 4.5 V
- 1.4
0.098 at VGS = - 2.5 V
-1
0.130 at VGS = - 1.8 V
-1
0.188 at VGS = - 1.5 V
- 0.3
TrenchFET® Power MOSFET
Typical ESD Performance 2500 V
100 % Rg Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
•
•
•
•
Qg (Typ.)
12.1 nC
APPLICATIONS
• Load Switch for Portable Devices
• Power Management
S
SC-89 (6-LEADS)
6
D
D
2
5
D
Marking Code
XX
YY
1
A
D
Lot Traceability
and Date Code
G
Part # Code
G
3
4
S
D
Top View
P-Channel MOSFET
Ordering Information: Si1077X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
V
- 1.75b, c
ID
- 1.4b, c
IDM
-8
IS
- 0.28b, c
A
0.33b, c
PD
W
0.21b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t 5 s
Maximum Junction-to-Ambienta, b
Steady State
RthJA
Typical
Maximum
300
375
360
450
Unit
°C/W
Notes:
a. Maximum under steady state conditions is 450 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 63254
S12-3081-Rev. A, 24-Dec-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1077X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
gfs
Forward Transconductance
ID = - 250 µA
VDS = VGS, ID = - 250 µA
V
- 11
mV/°C
2.4
- 0.4
-1
VDS = 0 V, VGS = ± 8 V
± 10
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS =  - 5 V, VGS = - 4.5 V
V
µA
- 10
-8
A
VGS = - 4.5 V, ID = - 1.8 A
0.065
0.078
VGS = - 2.5 V, ID = - 1 A
0.081
0.098
VGS = - 1.8 V, ID = - 1 A
0.100
0.130
VGS = - 1.5 V, ID = - 0.3 A
0.125
0.188
VDS = - 10 V, ID = - 1.8 A
10

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
965
VDS = - 10 V, VGS = 0 V, f = 1 MHz
110
VDS = - 10 V, VGS = - 8 V, ID = - 1.75 A
20.7
31.1
12.1
18.2
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.75 A
1.85
101
tr
Rise Time
td(off)
Turn-Off Delay Time
f = 1 MHz
3.6
VDD = - 10 V, RL = 7.1 
ID  - 1.4 A, VGEN = - 4.5 V, Rg = 1 
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
VDD = - 10 V, RL = 7.1 
ID = - 1.4 A, VGEN = - 8 V, Rg = 1 
tf
Fall Time
nC
2.21
td(on)
Turn-On Delay Time
pF
18
36
24
36

17
26
95
145
28
42
5
10
8
16
115
173
26
39
-8
A
- 0.75
- 1.2
V
ns
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
IS = - 1.4 A
Body Diode Reverse Recovery Time
trr
16
24
ns
Body Diode Reverse Recovery Charge
Qrr
7
14
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 1.4 A, dI/dt = 100 A/µs
9
7
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63254
S12-3081-Rev. A, 24-Dec-12
For technical questions, contact: [email protected]
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1077X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10-4
0.005
TJ = 25 °C
10-5
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.004
0.003
0.002
0.001
TJ = 150 °C
10-6
10-7
TJ = 25 °C
10-8
10-9
0.000
0
3
6
9
10-10
12
0
4
VGS - Gate-Source Voltage (V)
8
12
16
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-to-Source Voltage
8
2
VGS = 1.8 V
6
4
1.5
ID - Drain Current (A)
ID - Drain Current (A)
VGS = 5 V thru 2.5 V
VGS = 1.5 V
TC = 25 °C
1
0.5
2
TC = 125 °C
VGS = 1V
TC = - 55 °C
0
0
0
0.5
1
1.5
0
2
0.45
0.9
1.35
1.8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics Curves vs. Temperature
1520
0.2
1140
0.15
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VGS = 1.5 V
VGS = 1.8 V
VGS = 2.5 V
0.1
VGS = 4.5 V
Ciss
760
0.05
380
0
0
Coss
Crss
0
2
4
6
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 63254
S12-3081-Rev. A, 24-Dec-12
8
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1077X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
1.5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 1.8 A
VDS = 5 V
6
VDS = 10 V
4
VDS = 16 V
2
0
VGS=1A, 2.5 V
1.3
VGS = 1.8A, 4.5 V
1.1
0.9
0.7
0
6
12
18
24
- 50
Qg - Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.16
ID = 1.8 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.13
0.1
TJ = 125 °C
0.07
TJ = 25 °C
0.1
0.04
0.0
0.3
0.6
0.9
1.2
1
2
VSD - Source-to-Drain Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
0.8
12
0.65
9
Power (W)
VGS(th) (V)
4
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
ID = 250 μA
0.5
3
6
3
0.35
0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Document Number: 63254
S12-3081-Rev. A, 24-Dec-12
For technical questions, contact: [email protected]
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1077X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
0.24
Limited by RDS(on)*
100 μs
0.18
1 ms
10 ms
Power (W)
ID - Drain Current (A)
1
0.1
100 ms
1s
DC, 10 s
0.01
TA = 25 °C
0.12
0.06
BVDSS Limited
0.001
0
0.1
1
10
100
0
25
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
50
75
100
125
150
TA - Ambient Temperature (°C)
Safe Operating Area, Junction-to-Ambient
Power Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 450 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63254.
Document Number: 63254
S12-3081-Rev. A, 24-Dec-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
E1/2
2
3
aaa
D
e1
4
C
2x
4
A
B
D
6
5
4
SECTION B-B
C
E/2
2
E
E1
3
6
2x
DETAIL “A”
aaa
C
1
5
2
2x
3
bbb
C
e
B
6x b
4
ddd
M
C
A–B D
L1
A1
L
A
A1
SEE DETAIL “A”
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
Revision: 11-Aug-14
DIM.
MILLIMETERS
MIN.
NOM.
A
0.56
0.58
MAX.
0.60
A1
0
0.02
0.10
b
0.15
0.22
0.30
0.18
c
0.10
0.14
D
1.50
1.60
1.70
E
1.50
1.60
1.70
1.25
E1
1.15
1.20
e
0.45
0.50
0.55
e1
0.95
1.00
1.05
L
0.25
0.35
0.50
L1
0.10
0.20
0.30
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Document Number: 71612
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
0.012
0.020
(0.300)
(0.500)
0.019
(0.478)
0.031
(0.798)
0.069
(1.753)
(1.300)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72605
Revision: 21-Jan-08
www.vishay.com
21
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000