Si1077X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET® Power MOSFET Typical ESD Performance 2500 V 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 • • • • Qg (Typ.) 12.1 nC APPLICATIONS • Load Switch for Portable Devices • Power Management S SC-89 (6-LEADS) 6 D D 2 5 D Marking Code XX YY 1 A D Lot Traceability and Date Code G Part # Code G 3 4 S D Top View P-Channel MOSFET Ordering Information: Si1077X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C V - 1.75b, c ID - 1.4b, c IDM -8 IS - 0.28b, c A 0.33b, c PD W 0.21b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 s Maximum Junction-to-Ambienta, b Steady State RthJA Typical Maximum 300 375 360 450 Unit °C/W Notes: a. Maximum under steady state conditions is 450 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Document Number: 63254 S12-3081-Rev. A, 24-Dec-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1077X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) gfs Forward Transconductance ID = - 250 µA VDS = VGS, ID = - 250 µA V - 11 mV/°C 2.4 - 0.4 -1 VDS = 0 V, VGS = ± 8 V ± 10 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C VDS = - 5 V, VGS = - 4.5 V V µA - 10 -8 A VGS = - 4.5 V, ID = - 1.8 A 0.065 0.078 VGS = - 2.5 V, ID = - 1 A 0.081 0.098 VGS = - 1.8 V, ID = - 1 A 0.100 0.130 VGS = - 1.5 V, ID = - 0.3 A 0.125 0.188 VDS = - 10 V, ID = - 1.8 A 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 965 VDS = - 10 V, VGS = 0 V, f = 1 MHz 110 VDS = - 10 V, VGS = - 8 V, ID = - 1.75 A 20.7 31.1 12.1 18.2 VDS = - 10 V, VGS = - 4.5 V, ID = - 1.75 A 1.85 101 tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz 3.6 VDD = - 10 V, RL = 7.1 ID - 1.4 A, VGEN = - 4.5 V, Rg = 1 tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = - 10 V, RL = 7.1 ID = - 1.4 A, VGEN = - 8 V, Rg = 1 tf Fall Time nC 2.21 td(on) Turn-On Delay Time pF 18 36 24 36 17 26 95 145 28 42 5 10 8 16 115 173 26 39 -8 A - 0.75 - 1.2 V ns ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD IS = - 1.4 A Body Diode Reverse Recovery Time trr 16 24 ns Body Diode Reverse Recovery Charge Qrr 7 14 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 1.4 A, dI/dt = 100 A/µs 9 7 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 63254 S12-3081-Rev. A, 24-Dec-12 For technical questions, contact: [email protected] www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1077X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10-4 0.005 TJ = 25 °C 10-5 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.004 0.003 0.002 0.001 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 10-9 0.000 0 3 6 9 10-10 12 0 4 VGS - Gate-Source Voltage (V) 8 12 16 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-to-Source Voltage 8 2 VGS = 1.8 V 6 4 1.5 ID - Drain Current (A) ID - Drain Current (A) VGS = 5 V thru 2.5 V VGS = 1.5 V TC = 25 °C 1 0.5 2 TC = 125 °C VGS = 1V TC = - 55 °C 0 0 0 0.5 1 1.5 0 2 0.45 0.9 1.35 1.8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics Curves vs. Temperature 1520 0.2 1140 0.15 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V 0.1 VGS = 4.5 V Ciss 760 0.05 380 0 0 Coss Crss 0 2 4 6 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 63254 S12-3081-Rev. A, 24-Dec-12 8 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1077X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 8 1.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 1.8 A VDS = 5 V 6 VDS = 10 V 4 VDS = 16 V 2 0 VGS=1A, 2.5 V 1.3 VGS = 1.8A, 4.5 V 1.1 0.9 0.7 0 6 12 18 24 - 50 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.16 ID = 1.8 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.13 0.1 TJ = 125 °C 0.07 TJ = 25 °C 0.1 0.04 0.0 0.3 0.6 0.9 1.2 1 2 VSD - Source-to-Drain Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 0.8 12 0.65 9 Power (W) VGS(th) (V) 4 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage ID = 250 μA 0.5 3 6 3 0.35 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Document Number: 63254 S12-3081-Rev. A, 24-Dec-12 For technical questions, contact: [email protected] www.vishay.com 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1077X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.24 Limited by RDS(on)* 100 μs 0.18 1 ms 10 ms Power (W) ID - Drain Current (A) 1 0.1 100 ms 1s DC, 10 s 0.01 TA = 25 °C 0.12 0.06 BVDSS Limited 0.001 0 0.1 1 10 100 0 25 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 50 75 100 125 150 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Ambient Power Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 450 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63254. Document Number: 63254 S12-3081-Rev. A, 24-Dec-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000