Si1070X Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) 0.099 at VGS = 4.5 V 1.2a 1.0 3.5 0.140 at VGS = 2.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices SC-89 (6-LEADS) 1 6 D D 2 5 D Marking Code U G 3 4 XX YY D Lot Traceability and Date Code S Part # Code Top View Ordering Information: Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 25 °C TA = 70 °C 1b, c A 6 IAS 9 EAS 4.01 mJ IS 0.2b, c A 0.236 PD b, c W 0.151b, c TJ, Tstg Operating Junction and Storage Temperature Range V 1.2b, c ID IDM Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Symbol t 5 s Steady State RthJA Typical Maximum 440 530 540 650 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 1 Si1070X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 24.5 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.55 V IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 30 V, VGS = 0 V 1 nA VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 µA Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs VDS = 5 V, VGS = 4.5 V - 3.81 0.7 6 A VGS = 4.5 V, ID = 1.2 A 0.082 0.099 VGS = 2.5 V, ID = 1.0 A 0.116 0.140 VDS = 15 V, ID = 1.2 A 5 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 385 VDS = 15 V, VGS = 0 V, f = 1 MHz 55 VDS = 15 V, VGS = 5 V, ID = 1.2 A 3.8 8.3 3.5 4.1 30 VDS = 15 V, VGS = 4.5 V, ID = 4.6 A td(off) 1.1 nC 0.98 f = 1 MHz td(on) tr pF VDD = 15 V, RL = 15 ID 1.0 A, VGEN = 4.5 V, Rg = 1 tf 4.7 6.2 10 15 22 33 14 21 6 9 6 A 0.8 1.2 V nC ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD IS = 1.2 A Body Diode Reverse Recovery Time trr 19.4 29.5 Body Diode Reverse Recovery Charge Qrr 18.43 27.5 Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 3.8 A, dI/dt = 100 A/µs 16.4 ns 3 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 Si1070X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 6 3.0 VGS = 5 V thru 3 V 2.4 VGS = 2.5 V I D - Drain Current (A) I D - Drain Current (A) 5 4 3 2 1.8 1.2 TC = 125 °C VGS = 2 V 0.6 1 TC = 25 °C TC = - 55 °C VGS = 1.5 V 0 0.0 0.6 1.2 1.8 0.0 0.0 2.4 0.6 VDS - Drain-to-Source Voltage (V) 2.4 3.0 Transfer Characteristics Curves vs. Temp. 0.30 500 0.25 Ciss C - Capacitance (pF) 400 0.20 VGS = 2.5 V 0.15 VGS = 4.5 V 0.10 300 200 Coss 100 0.05 0.00 Crss 0 0 1 2 3 4 5 6 0 6 I D - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.8 VGS = 4.5 V ID = 1.2 A 1.6 ID = 1.2 A VDS = 15 V 3 VGS = 24 V 2 1 1.4 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.8 VGS - Gate-to-Source Voltage (V) Output Characteristics R DS(on) - On-Resistance (Ω) 1.2 VGS = 2.5 V ID = 1 A 1.2 1.0 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1070X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.24 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 1.2 A 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.18 TA = 125 °C 0.12 TA = 25 °C 0.06 0.00 0.001 0 0.2 0.4 0.6 0.8 1 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 5.0 1.5 1.4 ID = 250 µA 4.0 Power (W) VGS(th) (V) 1.2 1.0 3.0 2.0 0.8 0.6 - 50 1.0 0.0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 10 100 µs Limited by R DS(on)* 1 ms I D - Drain Current (A) 1 10 ms 100 ms 0.1 1s 10 s 0.01 DC BVDSS Limited TA = 25 ° C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 Si1070X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 10-1 0.2 0.1 0.05 10-2 Notes: 0.02 PDM t1 t2 1. Duty Cycle, D = 10-3 t1 t2 2. Per Unit Base = RthJA = 540 ° C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10-4 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73893. Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000