2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Pin1) SOT - 563F Marking : AB Absolute Maximum Ratings * Symbol Marking : AC Ta = 25°C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ≤ 1.0MΩ 60 V VGSS Gate-Source Voltage Continuous Pulsed ±20 ±40 V ID Drain Current Continuous Pulsed 280 1.5 mA A TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C Value Units * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter PD Total Device Dissipation Derating above TA = 25°C 250 2.0 mW mW/°C RθJA Thermal Resistance, Junction to Ambient * 500 °C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size, © 2007 Fairchild Semiconductor Corporation 2N7002V/VA Rev. A www.fairchildsemi.com 1 2N7002V/VA — N-Channel Enhancement Mode Field Effect Transistor October 2007 Symbol TC = 25°C unless otherwise noted Parameter Test Condition MIN TYP MAX Units 60 78 - V Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID=10uA IDSS Zero Gate Voltage Drain Current VDS= 60V, VGS= 0V VDS= 60V, VGS= 0V, @TC = 125°C - 0.001 7 1.0 500 uA IGSS Gate-Body Leakage VGS= ±20V, VDS= 0V - 0.2 ±100 nA 1.0 1.76 2.5 V - 1.6 2.53 7.5 13.5 Ω On Characteristics (Note1) VGS(th) Gate Threshold Voltage RDS(ON) Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A, VGS = 10V, ID = 0.5A, Tj = 125°C VDS = VGS, ID = 250uA ID(ON) On-State Drain Current VGS = 10V, VDS= 7.5V 0.5 1.43 - A gFS Forward Transconductance VDS = 10V, ID = 0.2A 80 356.5 - mS - 37.8 50 pF - 12.4 25 pF - 6.5 7.0 pF - 5.85 20 - 12.5 20 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS= 0V, f = 1.0MHz Switching Characteristics tD(ON) Turn-On Delay Time tD(OFF) Turn-Off Delay Time VDD = 30V, ID = 0.2A, VGEN= 10V RL = 150Ω, RGEN = 25Ω ns Note1 : Short duration test pulse used to minimize self-heating effect. © 2007 Fairchild Semiconductor Corporation 2N7002V/VA Rev. A www.fairchildsemi.com 2 2N7002V/VA — N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 1.6 VGS = 10V 1.4 1.2 5V 1.0 4V 0.8 0.6 0.4 3V 0.2 VGS = 3V 4V 4.5V 5V 6V 2.5 2.0 10V 9V 1.5 8V 7V 2V 1.0 0.0 0.0 0 1 2 3 4 5 6 7 8 9 10 0.2 0.4 Figure 3. On-Resistance Variation with Temperature RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE RDS(on) (Ω) DRANI-SOURCE ON-RESISTANCE VGS = 10V ID = 500 mA 2.0 1.5 1.0 2.5 ID = 500 mA 2.0 ID = 50 mA 1.5 1.0 0.5 -50 0 50 100 2 150 4 o 1.0 o TJ = -25 C o 0.8 150 C o 25 C o 125 C 0.6 o 75 C 0.4 0.2 4 10 5 2.5 VGS = VDS 2.0 ID = 1 mA ID = 0.25 mA 1.5 1.0 -50 0.0 3 8 Figure 6. Gate Threshold Variation with Temperature Vth, Gate-Source Threshold Voltage (V) Figure 5. Transfer Characteristics VDS = 10V 6 VGS. GATE-SOURCE VOLTAGE (V) TJ. JUNCTION TEMPERATURE( C) ID. DRAIN-SOURCE CURRENT(A) 1.0 3.0 2.5 6 0 50 100 150 o TJ. JUNCTION TEMPERATURE( C) VGS. GATE-SOURCE VOLTAGE (V) © 2007 Fairchild Semiconductor Corporation 2N7002V/VA Rev. A 0.8 Figure 4. On-Resistance Variation with Gate-Source Voltage 3.0 2 0.6 ID. DRAIN-SOURCE CURRENT(A) VDS. DRAIN-SOURCE VOLTAGE (V) www.fairchildsemi.com 3 2N7002V/VA — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature Figure 8. Power Derating 300 o 150 C PC[mW], POWER DISSIPATION IS Reverse Drain Current, [mA] VGS = 0 V 100 o 25 C 10 o -55 C 1 0.0 0.2 0.4 0.6 0.8 200 150 100 50 0 1.0 0 VSD, Body Diode Forward Voltage [V] 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE © 2007 Fairchild Semiconductor Corporation 2N7002V/VA Rev. A 250 www.fairchildsemi.com 4 2N7002V/VA — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics SOT563F 1.70 1.50 A 0.50 0.30 0.15 6 0.50 B 4 1.20 BSC 1.60 1 3 1.25 1.80 0.1 C B A (0.20) 0.30 0.55 0.50 1.00 TOP VIEW LAND PATTERN RECOMMENDATION 0.60 0.56 0.18 0.10 SEE DETAIL A C 0.35 BSC 0.20 BSC BOTTOM VIEW DETAIL A 0.10 0.00 SCALE 2 : 1 Dimensions in Millimeters © 2007 Fairchild Semiconductor Corporation 2N7002V/VA Rev. A www.fairchildsemi.com 5 2N7002V/VA — N-Channel Enhancement Mode Field Effect Transistor Package Dimensions The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 © 2007 Fairchild Semiconductor Corporation 2N7002V/VA Rev. A www.fairchildsemi.com 6 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor TRADEMARKS