New Product SiB422EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 9 VDS (V) 20 0.041 at VGS = 2.5 V 9 0.057 at VGS = 1.8 V 9 0.082 at VGS = 1.5 V 5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm Profile • Typical ESD Protection 4000 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 6 nC PowerPAK SC-75-6L-Single D 1 D APPLICATIONS 2 D 3 6 Marking Code G D 5 1.60 mm AFX S D S Part # code R • Portable Devices - Load Switch - Battery Switch G XXX Lot Traceability and Date code 1.60 mm 4 S Ordering Information: SiB422EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Limit Drain-Source Voltage Gate-Source Voltage VGS ±8 TC = 70 °C TA = 25 °C 9a ID 7.1b, c 5.7b, c TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C 9a IS 2.1b, c TC = 25 °C 13 8.4 PD W 2.5b, c 1.6b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 25 TC = 70 °C TA = 25 °C V 9a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit 20 - 55 to 150 Soldering Recommendations (Peak Temperature)d, e 260 °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 www.vishay.com 1 New Product SiB422EDK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs ID = 250 µA VDS = VGS, ID = 250 µA V 18 mV/°C - 2.5 0.4 1.0 VDS = 0 V, VGS = ± 4.5 V ± 1.5 VDS = 0 V, VGS = ± 8 V ± 25 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5 A V µA 10 15 A 0.025 0.030 VGS = 2.5 V, ID = 4.3 A 0.034 0.041 VGS = 1.8 V, ID = 1.5 A 0.046 0.057 VGS = 1.5 V, ID = 1 A 0.055 0.082 VDS = 10 V, ID = 5 A 28 VDS = 10 V, VGS = 8 V, ID = 7.1 A 11.5 18 6 9 Ω S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS = 10 V, VGS = 4.5 V, ID = 7.1 A tr VDD = 10 V, RL = 1.8 Ω ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω 0.46 2.3 4.6 0.3 0.45 0.6 0.9 3.8 6 tf 1.7 2.6 td(on) 0.15 0.25 0.3 0.45 tr td(off) nC 1.6 f = 1 MHz td(on) td(off) 0.8 VDD = 10 V, RL = 1.8 Ω ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω tf 5.6 9 1.6 2.5 kΩ µs Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 9 25 IS = 5.7 A, VGS = 0 V IF = 5.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.85 1.2 V 15 30 ns 7.5 15 nC 8 15 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 New Product SiB422EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 80 10-1 10-3 60 I G - Gate Current (A) I G - Gate Current (mA) 10-2 TJ = 25 °C 40 20 10-4 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 10-9 0 10-10 0 3 6 9 12 15 0 3 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage 12 15 10 VGS = 5 V thru 2 V 8 I D - Drain Current (A) 20 15 VGS = 1.5 V 10 5 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 TC = - 55 °C 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.10 8 ID = 7.1 A VGS - Gate-to-Source Voltage (V) VGS = 1.5 V R DS(on) - On-Resistance (Ω) 9 Gate Current vs. Gate-to-Source Voltage 25 I D - Drain Current (A) 6 VGS - Gate-to-Source Voltage (V) 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 0.00 6 VDS = 7.5 V VDS = 16 V 4 VDS = 10 V 2 0 0 5 10 15 20 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 25 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 New Product SiB422EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.6 100 (Normalized) R DS(on) - On-Resistance I S - Source Current (A) VGS = 2.5 V, 4.5 V; ID = 5 A 1.4 1.2 1.0 VGS = 1.5 V, 1.8 V; ID = 1.5 A 10 TJ = 150 °C TJ = 25 °C 1 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 TJ - Junction Temperature (°C) 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Normalized On-Resistance vs. Junction Temperature 0.12 20 15 ID = 1 A; TJ = 125 °C 0.08 Power (W) R DS(on) - On-Resistance (Ω) 0.10 ID = 5 A; TJ = 125 °C 0.06 10 0.04 ID = 5 A; TJ = 25 °C 0.02 5 ID = 1 A; TJ = 25 °C 0.00 0 1 2 3 4 0 0.001 5 0.01 0.1 1 10 1000 100 VGS - Gate-to-Source Voltage (V) Pulse (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 100 0.7 Limited by RDS(on)* I D - Drain Current (A) 0.6 VGS(th) (V) 0.5 ID = 250 µA 0.4 0.3 10 100 µs 1 ms 1 10 ms 0.1 0.2 100 ms 1 s, 10 s TA = 25 °C Single Pulse DC BVDSS Limited 0.1 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 100 125 150 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 New Product SiB422EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 18 15 16 12 12 Power (W) I D - Drain Current (A) 14 Package Limited 10 8 9 6 6 4 3 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 www.vishay.com 5 New Product SiB422EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65297. www.vishay.com 6 Document Number: 65297 S09-1919-Rev. A, 28-Sep-09 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 0.620 (0.024) (0.043) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000