SiB422EDK Datasheet

New Product
SiB422EDK
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.030 at VGS = 4.5 V
9
VDS (V)
20
0.041 at VGS = 2.5 V
9
0.057 at VGS = 1.8 V
9
0.082 at VGS = 1.5 V
5
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm Profile
• Typical ESD Protection 4000 V
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
6 nC
PowerPAK SC-75-6L-Single
D
1
D
APPLICATIONS
2
D
3
6
Marking Code
G
D
5
1.60 mm
AFX
S
D
S
Part # code
R
• Portable Devices
- Load Switch
- Battery Switch
G
XXX
Lot Traceability
and Date code
1.60 mm
4
S
Ordering Information: SiB422EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
Limit
Drain-Source Voltage
Gate-Source Voltage
VGS
±8
TC = 70 °C
TA = 25 °C
9a
ID
7.1b, c
5.7b, c
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
9a
IS
2.1b, c
TC = 25 °C
13
8.4
PD
W
2.5b, c
1.6b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
25
TC = 70 °C
TA = 25 °C
V
9a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
20
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
260
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited, TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
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1
New Product
SiB422EDK
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
ID = 250 µA
VDS = VGS, ID = 250 µA
V
18
mV/°C
- 2.5
0.4
1.0
VDS = 0 V, VGS = ± 4.5 V
± 1.5
VDS = 0 V, VGS = ± 8 V
± 25
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5 A
V
µA
10
15
A
0.025
0.030
VGS = 2.5 V, ID = 4.3 A
0.034
0.041
VGS = 1.8 V, ID = 1.5 A
0.046
0.057
VGS = 1.5 V, ID = 1 A
0.055
0.082
VDS = 10 V, ID = 5 A
28
VDS = 10 V, VGS = 8 V, ID = 7.1 A
11.5
18
6
9
Ω
S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS = 10 V, VGS = 4.5 V, ID = 7.1 A
tr
VDD = 10 V, RL = 1.8 Ω
ID ≅ 5.7 A, VGEN = 4.5 V, Rg = 1 Ω
0.46
2.3
4.6
0.3
0.45
0.6
0.9
3.8
6
tf
1.7
2.6
td(on)
0.15
0.25
0.3
0.45
tr
td(off)
nC
1.6
f = 1 MHz
td(on)
td(off)
0.8
VDD = 10 V, RL = 1.8 Ω
ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω
tf
5.6
9
1.6
2.5
kΩ
µs
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
9
25
IS = 5.7 A, VGS = 0 V
IF = 5.7 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.85
1.2
V
15
30
ns
7.5
15
nC
8
15
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
New Product
SiB422EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
80
10-1
10-3
60
I G - Gate Current (A)
I G - Gate Current (mA)
10-2
TJ = 25 °C
40
20
10-4
10-5
TJ = 150 °C
10-6
10-7
TJ = 25 °C
10-8
10-9
0
10-10
0
3
6
9
12
15
0
3
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
12
15
10
VGS = 5 V thru 2 V
8
I D - Drain Current (A)
20
15
VGS = 1.5 V
10
5
6
4
TC = 25 °C
2
TC = 125 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
TC = - 55 °C
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.10
8
ID = 7.1 A
VGS - Gate-to-Source Voltage (V)
VGS = 1.5 V
R DS(on) - On-Resistance (Ω)
9
Gate Current vs. Gate-to-Source Voltage
25
I D - Drain Current (A)
6
VGS - Gate-to-Source Voltage (V)
0.08
VGS = 1.8 V
0.06
VGS = 2.5 V
0.04
VGS = 4.5 V
0.02
0.00
6
VDS = 7.5 V
VDS = 16 V
4
VDS = 10 V
2
0
0
5
10
15
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
25
0
2
4
6
8
10
12
Qg - Total Gate Charge (nC)
Gate Charge
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New Product
SiB422EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1.6
100
(Normalized)
R DS(on) - On-Resistance
I S - Source Current (A)
VGS = 2.5 V, 4.5 V; ID = 5 A
1.4
1.2
1.0
VGS = 1.5 V, 1.8 V; ID = 1.5 A
10
TJ = 150 °C
TJ = 25 °C
1
0.8
0.6
- 50
- 25
0
25
50
75
100
125
0.1
0.0
150
TJ - Junction Temperature (°C)
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Normalized On-Resistance vs. Junction Temperature
0.12
20
15
ID = 1 A; TJ = 125 °C
0.08
Power (W)
R DS(on) - On-Resistance (Ω)
0.10
ID = 5 A; TJ = 125 °C
0.06
10
0.04
ID = 5 A; TJ = 25 °C
0.02
5
ID = 1 A; TJ = 25 °C
0.00
0
1
2
3
4
0
0.001
5
0.01
0.1
1
10
1000
100
VGS - Gate-to-Source Voltage (V)
Pulse (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
0.7
Limited by RDS(on)*
I D - Drain Current (A)
0.6
VGS(th) (V)
0.5
ID = 250 µA
0.4
0.3
10
100 µs
1 ms
1
10 ms
0.1
0.2
100 ms
1 s, 10 s
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.1
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
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100
125
150
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
New Product
SiB422EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
18
15
16
12
12
Power (W)
I D - Drain Current (A)
14
Package Limited
10
8
9
6
6
4
3
2
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
www.vishay.com
5
New Product
SiB422EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 105 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65297.
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Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
Package Information
Vishay Siliconix
b
e
PIN1
b
e
PIN3
PIN2
PIN1
PIN3
PIN6
K3
PIN5
E1
E1
K
K
D1
D1
D1
E3
E1
D2
K
E2 K4
L
PIN2
L
PowerPAK® SC75-6L
PIN6
K2
PIN4
K1
K2
BACKSIDE VIEW OF SINGLE
PIN5
K1
PIN4
K2
BACKSIDE VIEW OF DUAL
D
A
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
C
A1
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.18
0.25
0.33
0.007
0.010
0.013
0.18
0.25
0.33
0.007
0.010
0.013
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
D1
0.57
0.67
0.77
0.022
0.026
0.030
0.34
0.44
0.54
0.013
0.017
0.021
D2
0.10
0.20
0.30
0.004
0.008
0.012
E
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
E1
1.00
1.10
1.20
0.039
0.043
0.047
0.51
0.61
0.71
0.020
0.024
0.028
E2
0.20
0.25
0.30
0.008
0.010
0.012
E3
0.32
0.37
0.42
0.013
0.015
0.017
e
0.50 BSC
0.020 BSC
0.50 BSC
0.020 BSC
K
0.180 TYP
0.007 TYP
0.245 TYP
0.010 TYP
K1
0.275 TYP
0.011 TYP
0.320 TYP
0.013 TYP
K2
0.200 TYP
0.008 TYP
0.200 BSC
0.008 TYP
K3
0.255 TYP
0.010 TYP
K4
0.300 TYP
L
0.15
0.25
0.012 TYP
0.35
T
0.006
0.010
0.014
0.15
0.25
0.35
0.006
0.010
0.014
0.03
0.08
0.13
0.001
0.003
0.005
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5935
Document Number: 73000
06-Aug-07
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single
1.250 (0.049)
0.250 (0.01)
0.500 (0.02)
0.250 (0.01)
0.400 (0.016)
0.300 (0.012)
0.180 (0.007)
0.370 (0.015)
1.700 (0.067)
1.100
0.620 (0.024)
(0.043)
2.000 (0.079)
0.200 (0.008)
0.300 (0.012)
0.300 (0.012)
1
0.545 (0.021)
0.250 (0.01)
0.670 (0.026)
2.000 (0.079)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70488
Revision: 21-Jan-08
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000