SiB457EDK Datasheet

SiB457EDK
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.035 at VGS = - 4.5 V
- 9a
0.049 at VGS = - 2.5 V
- 9a
0.079 at VGS = - 1.8 V
- 9a
0.157 at VGS = - 1.5 V
-2
Qg (Typ.)
13 nC
PowerPAK SC-75-6L-Single
1
D
APPLICATIONS
2
D
• Load Switch for Portable Devices
• Load Switch for Charging Circuits
3
6
G
D
5
S
D
1.60 mm
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Typical ESD Performance: 2500 V
• Built in ESD Protection with Zener Diode
• Compliant to RoHS Directive 2011/65/EU
1.60 mm
S
S
Marking Code
BJX
4
Part # code
XXX
Lot Traceability
and Date code
Ordering Information:
SiB457EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
R
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
ID
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
IS
PD
TJ, Tstg
Limit
- 20
±8
- 9a
- 9a
- 6.8b, c
- 5.5b, c
- 25
- 9a
- 2b, c
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 64816
S12-0497-Rev. C, 05-Mar-12
For more information please contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB457EDK
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
IGSS
Gate-Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain
Currenta
ID(on)
ID = - 250 µA
VDS = VGS, ID = - 250 µA
a
RDS(on)
gfs
Forward Transconductance
mV/°C
2.5
- 0.4
-1
VDS = 0 V, VGS = ± 8 V
±5
VDS = 0 V, VGS = ± 4.5 V
± 0.5
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 4.5 V
- 15
VGS = - 4.5 V, ID = - 4.8 A
Drain-Source On-State Resistancea
V
- 12
V
µA
A
0.029
0.035
VGS = - 2.5 V, ID = - 4 A
0.040
0.049
VGS = - 1.8 V, ID = - 3.3 A
0.060
0.079
VGS = - 1.5 V, ID = - 1.5 A
0.085
0.157
VDS = - 10 V, ID = - 4.8 A
16
VDS = - 10 V, VGS = - 8 V, ID = - 6.8 A
22
44
13
26

S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = - 10 V, VGS = - 4.5 V, ID = - 6.8 A
1.2
3
f = 1 MHz
0.28
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
0.51
0.90
1.35
4.5
1.90
2.90
td(on)
0.17
0.26
0.45
0.70
5.5
8.30
2
3.5
VDD = - 10 V, RL = 1.8 
ID  - 5.5 A, VGEN = - 8 V, Rg = 1 
tf
Fall Time
2.8
0.34
tf
td(off)
Turn-Off Delay Time
VDD = - 10 V, RL = 1.8 
ID  - 5.5 A, VGEN = - 4.5 V, Rg = 1 
1.4
3
tr
Rise Time
nC
k
µs
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
-9
- 25
IS = - 5.5 A, VGS = 0 V
- 0.85
- 1.2
A
V
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For more information please contact: [email protected]
Document Number: 64816
S12-0497-Rev. C, 05-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB457EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
10-2
I GSS - Gate Current (mA)
10-3
10-4
I GSS - Gate Current (A)
0.6
0.4
TJ = 25 °C
0.2
10-5
TJ = 150 °C
10-6
10-7
TJ = 25 °C
10-8
10-9
10-10
10-11
0.0
0
3
6
9
12
0
15
3
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
Gate Current vs. Gate-Source Voltage
25
10
VGS = 5 V thru 2.5 V
8
I D - Drain Current (A)
20
I D - Drain Current (A)
6
9
12
VGS - Gate-to-Source Voltage (V)
VGS = 2 V
15
10
VGS = 1.5 V
5
6
4
TC = 25 °C
2
TC = 125 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
TC = - 55 °C
0
0.0
3.0
0.5
Output Characteristics
1.5
2.0
Transfer Characteristics
0.20
R DS(on) - On-Resistance (Normalized)
1.5
VGS = 1.5 V
R DS(on) - On-Resistance (Ω)
1.0
VGS - Gate-to-Source Voltage (V)
0.15
VGS = 1.8 V
0.10
VGS = 2.5 V
0.05
1.4
VGS = 4.5 V, 2.5 V; ID = 4.8 A
1.3
VGS = 1.8 V; ID = 4.8 A
1.2
1.1
VGS = 1.5 V; ID = 1.5 A
1.0
0.9
0.8
VGS = 4.5 V
0.00
0
5
10
15
ID - Drain Current (A)
20
On-Resistance vs. Drain Current
Document Number: 64816
S12-0497-Rev. C, 05-Mar-12
25
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For more information please contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB457EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
0.15
R DS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
ID = 6.8 A
6
VDS = 5 V
VDS = 10 V
VDS = 16 V
4
2
0
0.12
0.09
ID = 1.5 A; TJ = 125 °C
ID = 4.8 A; TJ = 125 °C
ID = 4.8 A;
TJ = 25 °C
0.06
ID = 1.5 A; TJ = 25 °C
0.03
0.00
0
5
10
15
20
Qg - Total Gate Charge (nC)
25
0
Gate Charge
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
100
20
15
TJ = 150 °C
10
Power (W)
I S - Source Current (A)
1
TJ = 25 °C
10
1
5
0.1
0.0
0.3
0.6
0.9
VSD - Source-to-Drain Voltage (V)
0
0.001
1.2
Soure-Drain Diode Forward Voltage
0.01
0.1
1
Pulse (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
100
0.8
Limited by RDS(on)*
0.7
10
I D - Drain Current (A)
ID = 250 µA
VGS(th) (V)
0.6
0.5
0.4
100 µs
1 ms
1
10 ms
TA = 25 °C
Single Pulse
100 ms
1 s, 10 s
0.1
DC
0.3
BVDSS Limited
0.2
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
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4
125
150
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
For more information please contact: [email protected]
Document Number: 64816
S12-0497-Rev. C, 05-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB457EDK
Vishay Siliconix
20
15
16
12
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
Package Limited
8
9
6
3
4
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64816
S12-0497-Rev. C, 05-Mar-12
For more information please contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB457EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 105 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64816.
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For more information please contact: [email protected]
Document Number: 64816
S12-0497-Rev. C, 05-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
b
e
PIN3
PIN2
PIN1
PIN3
PIN6
K3
PIN5
E1
E1
K
K
D1
D1
D1
E3
E1
D2
K
E2 K4
L
PIN2
L
PowerPAK® SC75-6L
PIN6
K2
PIN4
K1
K2
BACKSIDE VIEW OF SINGLE
PIN5
K1
PIN4
K2
BACKSIDE VIEW OF DUAL
D
A
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
C
A1
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.18
0.25
0.33
0.007
0.010
0.013
0.18
0.25
0.33
0.007
0.010
0.013
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
D1
0.57
0.67
0.77
0.022
0.026
0.030
0.34
0.44
0.54
0.013
0.017
0.021
D2
0.10
0.20
0.30
0.004
0.008
0.012
E
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
E1
1.00
1.10
1.20
0.039
0.043
0.047
0.51
0.61
0.71
0.020
0.024
0.028
E2
0.20
0.25
0.30
0.008
0.010
0.012
E3
0.32
0.37
0.42
0.013
0.015
0.017
e
0.50 BSC
0.020 BSC
0.50 BSC
0.020 BSC
K
0.180 TYP
0.007 TYP
0.245 TYP
0.010 TYP
K1
0.275 TYP
0.011 TYP
0.320 TYP
0.013 TYP
K2
0.200 TYP
0.008 TYP
0.200 BSC
0.008 TYP
K3
0.255 TYP
0.010 TYP
K4
0.300 TYP
L
0.15
0.25
0.012 TYP
0.35
T
0.006
0.010
0.014
0.15
0.25
0.35
0.006
0.010
0.014
0.03
0.08
0.13
0.001
0.003
0.005
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5935
Document Number: 73000
06-Aug-07
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single
1.250 (0.049)
0.250 (0.01)
0.500 (0.02)
0.250 (0.01)
0.400 (0.016)
0.300 (0.012)
0.180 (0.007)
0.370 (0.015)
1.700 (0.067)
1.100
0.620 (0.024)
(0.043)
2.000 (0.079)
0.200 (0.008)
0.300 (0.012)
0.300 (0.012)
1
0.545 (0.021)
0.250 (0.01)
0.670 (0.026)
2.000 (0.079)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70488
Revision: 21-Jan-08
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000