') 1 ' BC51PAS; BC52PAS; BC53PAS 45 V/60 V/80 V, 1 A PNP medium power transistors Rev. 1 — 19 June 2015 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Table 1. Product overview Type number[1] Package BC51PAS DFN2020D-3 NPN complement SOT1061D BC54PAS BC52PAS BC55PAS BC53PAS BC56PAS [1] Valid for all available selection groups. 1.2 Features and benefits High collector current capability Three current gain selections IC and ICM Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability Exposed heat sink for excellent thermal Suitable for Automatic Optical and electrical conductivity Inspection (AOI) of solder joint AEC-Q101 qualified 1.3 Applications Linear voltage regulators Battery driven devices MOSFET drivers High-side switches Power management Amplifiers 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter VCEO collector-emitter voltage open base Conditions Min Typ Max Unit BC51PAS series - - 45 V BC52PAS series - - 60 V BC53PAS series - - 80 V BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors Table 2. Quick reference data …continued Tamb = 25 C unless otherwise specified Symbol Parameter IC collector current ICM peak collector current single pulse; tp 1 ms DC current gain hFE [1] Conditions Min Typ Max Unit - - 1 A A - - 2 VCE = 2 V; IC = 150 mA [1] 63 - 250 hFE selection -10 VCE = 2 V; IC = 150 mA [1] 63 - 160 hFE selection -16 VCE = 2 V; IC = 150 mA [1] 100 - 250 Pulse test: tp 300 ms; 0.02. 2. Pinning information Table 3. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol V\P 7UDQVSDUHQWWRSYLHZ 3. Ordering information Table 4. Ordering information Type number[1] BC51PAS series BC52PAS series BC53PAS series [1] BC51_52_53PAS_SER Product data sheet Package Name Description Version DFN2020D-3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 2 0.65 mm. SOT1061D Valid for all available selection groups. All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors 4. Marking Table 5. Marking codes Type number Marking code BC51PAS C4 BC51-10PAS C5 BC51-16PAS C6 BC52PAS C7 BC52-10PAS C8 BC52-16PAS C9 BC53PAS CA BC53-10PAS CB BC53-16PAS CC 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCBO collector-base voltage open emitter Min Max Unit BC51PAS series - 45 V BC52PAS series - 60 V - 100 V BC51PAS series - 45 V BC52PAS series - 60 V BC53PAS series VCEO collector-emitter voltage open base BC53PAS series BC51_52_53PAS_SER Product data sheet VEBO emitter-base voltage IC collector current ICM peak collector current IB base current open collector single pulse; tp 1 ms All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 - 80 V - 5 V - 1 A - 2 A - 0.3 A © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb 25 C Min Max Unit [1] - 0.42 W [2] - 0.81 W [3] - 0.83 W [4] - 1.10 W [5] - 1.65 W Tj junction temperature - 150 C Tamb ambient temperature 55 150 C Tstg storage temperature 65 150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2. DDF 3WRW : 7DPE& (1) FR4 PCB, 4-layer copper, 1 cm2 (2) FR4 PCB, single-sided copper, 6 cm2 (3) FR4 PCB, single-sided copper, 1 cm2 (4) FR4 PCB, 4-layer copper, standard footprint (5) FR4 PCB, single-sided copper, standard footprint Fig 1. BC51_52_53PAS_SER Product data sheet Power derating curves All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 4 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Max Unit [1] 298 K/W [2] 154 K/W [3] 151 K/W [4] 114 K/W [5] 76 K/W 20 K/W in free air [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2 DDF =WKMD .: GXW\F\FOH WSV FR4 PCB, single-sided copper, tin-plated and standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values BC51_52_53PAS_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 5 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors DDF =WKMD .: GXW\F\FOH WSV FR4 PCB, 4-layer copper, tin-plated and standard footprint. Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values DDF =WKMD .: GXW\F\FOH WSV FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values BC51_52_53PAS_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 6 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors DDF =WKMD .: GXW\F\FOH WSV FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values DDF =WKMD .: GXW\F\FOH WSV FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values BC51_52_53PAS_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 7 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A - - 100 nA VCB = 30 V; IE = 0 A; Tj = 150 C - - 10 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 2 V; IC = 5 mA 63 - - VCE = 2 V; IC = 150 mA [1] 63 - 250 VCE = 2 V; IC = 500 mA [1] 40 - - hFE selection -10 VCE = 2 V; IC = 150 mA [1] 63 - 160 hFE selection -16 VCE = 2 V; IC = 150 mA [1] 100 - 250 - - 500 mV - - 1 V VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA [1] VBE base-emitter voltage VCE = 2 V; IC = 500 mA [1] Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 15 - pF fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz - 145 - MHz [1] Pulse test: tp 300 ms; 0.02. DDF DDD ,%P$ ,& $ K)( ,&$ VCE = 2 V 9&(9 Tamb = 25 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = 55 C Fig 7. DC current gain as a function of collector current; typical values BC51_52_53PAS_SER Product data sheet Fig 8. Collector current as a function of collector-emitter voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 8 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors DDF DDF 9&(VDW 9 9%( 9 ,&P$ VCE = 2 V ,&P$ IC/IB = 10 (1) Tamb = 55 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 55 C Fig 9. Base-emitter voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BC51_52_53PAS_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 9 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors 9. Package outline 1.3 1 0.04 max 2 1.1 0.9 0.3 0.2 0.65 max 0.45 0.35 0.35 0.25 2.1 1.9 3 1.6 1.4 2.1 1.9 Dimensions in mm 14-03-18 Fig 11. Package outline DFN2020D-3 (SOT1061D) BC51_52_53PAS_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 10 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors 10. Soldering Footprint information for reflow soldering of DFN2020D-3 package SOT1061D 2.1 1.7 1.3 0.4 (2x) 0.5 (2x) 0.3 (2x) 0.5 (2x) 0.6 (2x) 0.7 (2x) 0.25 1.1 0.35 2.5 0.3 0.25 2.3 0.25 1 0.35 1.1 0.35 1.2 0.35 0.3 0.4 0.5 1.5 1.6 1.7 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 14-03-05 14-03-12 sot1061d_fr Fig 12. Reflow soldering footprint DFN2020D-3 (SOT1061D) BC51_52_53PAS_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 11 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BC51_52_53PAS_SER v.1 20150619 Product data sheet - - BC51_52_53PAS_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 12 of 15 BC51PAS; BC52PAS; BC53PAS NXP Semiconductors 45 V/60 V/80 V, 1 A PNP medium power transistors 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BC51_52_53PAS_SER Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 13 of 15 NXP Semiconductors BC51PAS; BC52PAS; BC53PAS 45 V/60 V/80 V, 1 A PNP medium power transistors No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 12.4 Trademarks Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BC51_52_53PAS_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 19 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 14 of 15 NXP Semiconductors BC51PAS; BC52PAS; BC53PAS 45 V/60 V/80 V, 1 A PNP medium power transistors 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2015. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 June 2015 Document identifier: BC51_52_53PAS_SER