New Product SiA456DJ Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 5 nC RoHS COMPLIANT APPLICATIONS PowerPAK SC-70-6L-Single • Boost Converter for Portable Devices D 1 D 2 D Marking Code 3 6 G D 5 2.05 mm S G AGX Part # code S D XXX Lot Traceability and Date code 2.05 mm 4 S Ordering Information: SiA456DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) ID d, e IS PD TJ, Tstg Limit 200 ± 16 2.6 2.1 1.1b, c 0.9b, c 2 3.6 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W. Document Number: 68642 S-81952-Rev. B, 25-Aug-08 www.vishay.com 1 New Product SiA456DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 200 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 265 ID = 250 µA VGS(th) Temperature Coefficient V mV/°C - 3.5 0.6 1.4 V ± 100 nA VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V 2 µA A VGS = 4.5 V, ID = 0.75 A 1.08 1.38 VGS = 2.5 V, ID = 0.5 A 1.12 1.5 VGS = 1.8 V, ID = 0.1 A 1.2 3.5 VDS = 4 V, ID = 0.75 A 5 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 350 VDS = 100 V, VGS = 0 V, f = 1 MHz td(off) tf VDS = 100 V, VGS = 10 V, ID = 1.1 A VDS = 100 V, VGS = 4.5 V, ID = 1.1 A tr tf 9.5 14.5 5 7.5 0.7 nC 1.7 f = 1 MHz VDD = 100 V, RL = 111 Ω ID ≅ 0.9 A, VGEN = 4.5 V, Rg = 1 Ω td(on) td(off) pF 6 td(on) tr 12 VDD = 100 V, RL = 111 Ω ID ≅ 0.9 A, VGEN = 10 V, Rg = 1 Ω Ω 2 10 15 25 40 30 45 20 30 5 10 20 30 16 25 12 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 3.6 2 IS = 0.9 A, VGS = 0 V IF = 0.9 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 40 80 ns 40 80 nC 21 19 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68642 S-81952-Rev. B, 25-Aug-08 New Product SiA456DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 2.0 TC = - 55 °C VGS = 5 thru 2 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 1.6 1.2 0.8 TC = 25 °C 0.6 TC = 125 °C 0.4 0.2 0.4 VGS = 1 V 0.0 0.0 0.0 0 1 2 3 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 600 1.5 500 1.4 1.3 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 VDS - Drain-to-Source Voltage (V) 1.6 VGS = 1.8 V 1.2 VGS = 2.5 V 1.1 VGS = 4.5 V 1.0 400 Ciss 300 200 Crss 100 0.9 Coss 0.8 0.0 0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 50 2.0 10 ID = 1.1 A 1.8 VDS = 100 V VGS = 4.5 V, 2.5 V, ID = 0.75 A VGS = 1.8 V, ID = 0.1 A 8 VDS = 160 V 6 4 1.6 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 0.5 1.4 1.2 1.0 0.8 2 0.6 0 0 2 Document Number: 68642 S-81952-Rev. B, 25-Aug-08 4 6 8 10 12 0.4 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 New Product SiA456DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 10 1 TJ = 150 °C 2.5 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 0.75 A TJ = 25 °C TJ = 125 °C 2.0 1.5 TJ = 25 °C 1.0 0.5 0.1 0.0 0.2 0.4 0.6 0.8 0 1.0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.4 30 1.3 25 20 1.1 Power (W) V GS(th) (V) 1.2 ID = 250 µA 1.0 0.9 15 10 0.8 5 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power (Junction-to-Ambient) Threshold Voltage 10 I D - Drain Current (A) Limited by RDS(on)* 100 µs 1 1 ms 0.1 10 ms 100 ms 1s 10 s 0.01 DC TA = 25 °C Single Pulse 0.001 0.1 1 BVDSS Limited 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68642 S-81952-Rev. B, 25-Aug-08 New Product SiA456DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 3.0 2.5 Power Dissipation (W) I D - Drain Current (A) 15 2.0 1.5 1.0 10 5 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68642 S-81952-Rev. B, 25-Aug-08 www.vishay.com 5 New Product SiA456DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68642. www.vishay.com 6 Document Number: 68642 S-81952-Rev. B, 25-Aug-08 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000