SiA406DJ Datasheet

New Product
SiA406DJ
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0198 at VGS = 4.5 V
4.5
0.0222 at VGS = 2.5 V
4.5
0.0264 at VGS = 1.8 V
4.5
VDS (V)
12
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
13.7 nC
PowerPAK SC-70-6L-Single
APPLICATIONS
1
D
2
Marking Code
D
D
• Load Switch for Portable Devices
• DC/DC Converters
3
6
G
D
AHX
Part # code
5
S
D
2.05 mm
S
G
XXX
Lot Traceability
and Date code
2.05 mm
4
S
Ordering Information: SiA406DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150
Symbol
VDS
VGS
°C)a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Limit
12
±8
4.5a
4.5a
4.5a, b, c
4.5a, b, c
20
4.5a
2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
28
5.3
Maximum
36
6.5
Unit
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 65361
S09-1924-Rev. A, 28-Sep-09
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1
New Product
SiA406DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
12
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
V
11
mV/°C
- 2.9
0.4
1.0
V
± 100
nA
VDS = 12 V, VGS = 0 V
1
VDS = 12 V, VGS = 0 V, TJ = 55 °C
10
VDS ≤ 5 V, VGS = 4.5 V
20
VGS = 4.5 V, ID = 10.8 A
0.0165
0.0198
RDS(on)
VGS = 2.5 V, ID = 10.2 A
0.0185
0.0222
VGS = 1.8 V, ID = 3 A
0.0220
0.0264
gfs
VDS = 6 V, ID = 10.8 A
38
µA
A
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1380
VDS = 6 V, VGS = 0 V, f = 1 MHz
pF
345
155
VDS = 6 V, VGS = 5 V, ID = 10.8 A
VDS = 6 V, VGS = 4.5 V, ID = 10.8 A
15.2
23
13.7
21
2.6
1.1
2.5
5
f = 1 MHz
10
20
9
18
40
60
tf
14
21
td(on)
6
12
11
17
td(on)
tr
td(off)
tr
td(off)
nC
VDD = 6 V, RL = 0.7 Ω
ID ≅ 8.6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 6 V, RL = 0.7 Ω
ID ≅ 8.6 A, VGEN = 8 V, Rg = 1 Ω
tf
0.5
27
41
9
18
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
4.5c
TC = 25 °C
20
IS = 8.6 A, VGS = 0 V
IF = 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
22
33
ns
7
14
nC
8
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65361
S09-1924-Rev. A, 28-Sep-09
New Product
SiA406DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
20
VGS = 5 V thru 1.5 V
I D - Drain Current (A)
I D - Drain Current (A)
4
15
10
5
3
2
TC = 25 °C
1
TC = 125 °C
TC = - 55 °C
VGS = 1 V
0
0.0
0.5
1.0
1.5
0
0.0
2.0
0.6
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
2000
0.023
Ciss
C - Capacitance (pF)
1500
VGS = 1.8 V
0.021
0.019
VGS = 2.5 V
1000
Coss
500
0.017
VGS = 4.5 V
Crss
0.015
0
0
5
10
15
20
0
3
ID - Drain Current (A)
6
9
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.6
ID = 10.8 A
4
VGS = 2.5 V; ID = 10.2 A
VDS = 6 V
3
VDS = 3 V
VDS = 9.6 V
2
1
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
0.9
VDS - Drain-to-Source Voltage (V)
0.025
RDS(on) - On-Resistance (Ω)
0.3
1.2
VGS = 4.5 V; ID = 10.8 A
1.0
0.8
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65361
S09-1924-Rev. A, 28-Sep-09
15
18
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
SiA406DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.040
10
TJ = 150 °C
TJ = 25 °C
1
0.034
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 10.8 A
0.028
TJ = 125 °C
0.022
0.016
TJ = 25 °C
0.010
0.1
0.0
0.2
0.4
0.6
0.8
0
1.0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
0.8
25
0.7
ID = 250 µA
20
Power (W)
VGS(th) (V)
0.6
0.5
15
0.4
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1 s, 10 s
0.1
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65361
S09-1924-Rev. A, 28-Sep-09
New Product
SiA406DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
I D - Drain Current (A)
28
21
14
7
Package Limited
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
25
2.0
20
Power (W)
Power (W)
1.5
15
10
1.0
0.5
5
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65361
S09-1924-Rev. A, 28-Sep-09
www.vishay.com
5
New Product
SiA406DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65361.
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Document Number: 65361
S09-1924-Rev. A, 28-Sep-09
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000