New Product SiA406DJ Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0198 at VGS = 4.5 V 4.5 0.0222 at VGS = 2.5 V 4.5 0.0264 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 13.7 nC PowerPAK SC-70-6L-Single APPLICATIONS 1 D 2 Marking Code D D • Load Switch for Portable Devices • DC/DC Converters 3 6 G D AHX Part # code 5 S D 2.05 mm S G XXX Lot Traceability and Date code 2.05 mm 4 S Ordering Information: SiA406DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Symbol VDS VGS °C)a TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Limit 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 28 5.3 Maximum 36 6.5 Unit °C/W Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 65361 S09-1924-Rev. A, 28-Sep-09 www.vishay.com 1 New Product SiA406DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 11 mV/°C - 2.9 0.4 1.0 V ± 100 nA VDS = 12 V, VGS = 0 V 1 VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 VDS ≤ 5 V, VGS = 4.5 V 20 VGS = 4.5 V, ID = 10.8 A 0.0165 0.0198 RDS(on) VGS = 2.5 V, ID = 10.2 A 0.0185 0.0222 VGS = 1.8 V, ID = 3 A 0.0220 0.0264 gfs VDS = 6 V, ID = 10.8 A 38 µA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1380 VDS = 6 V, VGS = 0 V, f = 1 MHz pF 345 155 VDS = 6 V, VGS = 5 V, ID = 10.8 A VDS = 6 V, VGS = 4.5 V, ID = 10.8 A 15.2 23 13.7 21 2.6 1.1 2.5 5 f = 1 MHz 10 20 9 18 40 60 tf 14 21 td(on) 6 12 11 17 td(on) tr td(off) tr td(off) nC VDD = 6 V, RL = 0.7 Ω ID ≅ 8.6 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 6 V, RL = 0.7 Ω ID ≅ 8.6 A, VGEN = 8 V, Rg = 1 Ω tf 0.5 27 41 9 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 4.5c TC = 25 °C 20 IS = 8.6 A, VGS = 0 V IF = 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 22 33 ns 7 14 nC 8 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65361 S09-1924-Rev. A, 28-Sep-09 New Product SiA406DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 20 VGS = 5 V thru 1.5 V I D - Drain Current (A) I D - Drain Current (A) 4 15 10 5 3 2 TC = 25 °C 1 TC = 125 °C TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 0 0.0 2.0 0.6 1.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 2000 0.023 Ciss C - Capacitance (pF) 1500 VGS = 1.8 V 0.021 0.019 VGS = 2.5 V 1000 Coss 500 0.017 VGS = 4.5 V Crss 0.015 0 0 5 10 15 20 0 3 ID - Drain Current (A) 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 1.6 ID = 10.8 A 4 VGS = 2.5 V; ID = 10.2 A VDS = 6 V 3 VDS = 3 V VDS = 9.6 V 2 1 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 0.9 VDS - Drain-to-Source Voltage (V) 0.025 RDS(on) - On-Resistance (Ω) 0.3 1.2 VGS = 4.5 V; ID = 10.8 A 1.0 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65361 S09-1924-Rev. A, 28-Sep-09 15 18 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiA406DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.040 10 TJ = 150 °C TJ = 25 °C 1 0.034 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 10.8 A 0.028 TJ = 125 °C 0.022 0.016 TJ = 25 °C 0.010 0.1 0.0 0.2 0.4 0.6 0.8 0 1.0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 0.8 25 0.7 ID = 250 µA 20 Power (W) VGS(th) (V) 0.6 0.5 15 0.4 10 0.3 5 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1 s, 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65361 S09-1924-Rev. A, 28-Sep-09 New Product SiA406DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted I D - Drain Current (A) 28 21 14 7 Package Limited 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 25 2.0 20 Power (W) Power (W) 1.5 15 10 1.0 0.5 5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65361 S09-1924-Rev. A, 28-Sep-09 www.vishay.com 5 New Product SiA406DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65361. www.vishay.com 6 Document Number: 65361 S09-1924-Rev. A, 28-Sep-09 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000