DF N2 020 D-3 PMEG3020CPAS 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 20 January 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • • • • • • • • • Average forward current IF(AV) ≤ 2 A Reverse voltage VR ≤ 30 V Low forward voltage VF ≤ 440 mV Low reverse current Reduced Printed-Circuit-Board (PCB) area requirements Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity Leadless small SMD plastic package with visible and solderable side pads Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications • • • • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Free-wheeling application Reverse polarity protection Low power consumption application Battery chargers for mobile equipment LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 75 °C; Min Typ Max Unit - - 2 A - - 2 A Per diode IF(AV) [1] square wave δ = 0.5; f = 20 kHz; Tsp ≤ 135 °C; square wave Scan or click this QR code to view the latest information for this product PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier Symbol Parameter Conditions Min Typ Max Unit VR reverse voltage Tj = 25 °C - - 30 V forward voltage IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02; - 410 440 mV - 485 2000 µA Per diode VF Tj = 25 °C; pulsed IR reverse current VR = 30 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 anode diode 1 A1 2 anode diode 2 A2 3 common K cathode Simplified outline Graphic symbol 3 3 1 2 Transparent top view 1 2 006aaa438 DFN2020D-3 (SOT1061D) 6. Ordering information Table 3. Ordering information Type number PMEG3020CPAS Package Name Description Version DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm SOT1061D 7. Marking Table 4. Marking codes Type number Marking code PMEG3020CPAS CT PMEG3020CPAS Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 30 V IF forward current Tsp ≤ 130 °C; δ = 1 - 2.8 A IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 75 °C; - 2 A - 2 A Per diode [1] square wave δ = 0.5; f = 20 kHz; Tsp ≤ 135 °C; square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 7 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 9 A [2] - 500 mW [3] - 960 mW [1] - 1800 mW Per device; one diode loaded Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] PMEG3020CPAS Product data sheet Device mounted on a ceramic PCB, Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1][2] - - 250 K/W [1][3] - - 130 K/W [1][4] - - 70 K/W [5] - - 12 K/W Per device; one diode loaded Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) in free air thermal resistance from junction to solder point [1] [2] [3] [4] [5] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. 006aac415 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 10 0.02 0.75 0.33 0.2 0.05 0.01 0 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3020CPAS Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 006aac416 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 10 0 0.75 0.33 0.2 0.05 0.02 0.01 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aac417 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.25 10 0.1 0 1 10- 3 0.2 0.05 0.02 0.01 10- 2 10- 1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG3020CPAS Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit reverse breakdown voltage IR = 5 mA; Tj = 25 °C; tp = 300 µs; 30 - - V forward voltage IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; - 220 - mV - 335 370 mV - 410 440 mV - 120 - µA - 485 2000 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 170 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 60 - pF IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; - 4 - ns Per diode V(BR)R VF δ = 0.02; pulsed Tj = 25 °C; pulsed IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed IR VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02; reverse current Tj = 25 °C; pulsed VR = 30 V; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C; pulsed Cd diode capacitance trr reverse recovery time Tj = 25 °C 006aac418 10 IF (A) 1 (1) 006aac419 1 IR (A) 10- 1 (1) (2) (2) 10- 2 (3) 10- 1 (4) (5) 10- 3 (3) 10- 4 10- 2 10- 5 10- 3 10- 4 0.0 10- 6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF (V) 0 10 (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig. 4. 10- 7 (4) Fig. 5. Forward current as a function of forward voltage; typical values PMEG3020CPAS Product data sheet VR (V) 30 Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 20 January 2015 20 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 006aac420 300 006aac421 1.4 PF(AV) (W) 1.2 Cd (pF) (4) (3) (2) 1.0 200 (1) 0.8 0.6 100 0.4 0.2 0 Fig. 6. 0 10 20 0.0 0.0 30 VR (V) f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. 006aac422 3.0 1.0 2.0 IF(AV) (A) 3.0 Average forward power dissipation as a function of average forward current; typical values aaa-015084 0.6 PR(AV) (W) PR(AV) (W) 2.0 0.4 (1) (1) (2) (2) (3) (3) 1.0 0.2 (4) (4) 0.0 Fig. 8. 0 5 10 15 VR (V) 0.0 20 0 Tj = 125 °C Tj = 85 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Average reverse power dissipation as a function of reverse voltage; typical values PMEG3020CPAS Product data sheet Fig. 9. 20 VR (V) 30 Average reverse power dissipation as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 20 January 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 006aac423 3.0 IF(AV) (A) 006aac424 3.0 (1) IF(AV) (A) (1) 2.0 (2) 2.0 (2) (3) (3) 1.0 1.0 (4) (4) 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0.0 FR4 PCB, standard footprint Tj = 150 °C 006aac425 3.0 (1) 75 100 125 150 175 Tamb (°C) 2 Fig. 11. Average forward current as a function of ambient temperature; typical values 006aac426 3.0 (1) IF(AV) (A) (2) (2) 2.0 (3) (3) 1.0 1.0 (4) (4) 0.0 50 (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values 2.0 25 FR4 PCB, mounting pad for cathode 1 cm Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz IF(AV) (A) 0 0 25 50 75 100 125 150 175 Tamb (°C) 0.0 0 25 50 75 Ceramic PCB, Al2O3, standard footprint Tj = 150 °C Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of ambient temperature; typical values PMEG3020CPAS Product data sheet 100 125 150 175 Tsp (°C) Fig. 13. Average forward current as a function of solder point temperature; typical values All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 14. Reverse recovery definition P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 15. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG3020CPAS Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 12. Package outline 1.3 0.35 0.25 1 0.3 0.2 0.65 max 0.45 0.35 0.04 max 2 1.1 0.9 2.1 1.9 3 1.6 1.4 2.1 1.9 Dimensions in mm 14-03-18 Fig. 16. Package outline DFN2020D-3 (SOT1061D) PMEG3020CPAS Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 13. Soldering Footprint information for reflow soldering of DFN2020D-3 package SOT1061D 2.1 1.7 1.3 0.4 (2x) 0.5 (2x) 0.3 (2x) 0.5 (2x) 0.6 (2x) 0.7 (2x) 0.25 1.1 2.5 0.35 0.3 0.25 2.3 0.25 1 0.35 1.1 0.35 1.2 0.35 0.3 0.4 0.5 1.5 1.6 1.7 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 14-03-05 14-03-12 sot1061d_fr Fig. 17. Reflow soldering footprint for DFN2020D-3 (SOT1061D) PMEG3020CPAS Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG3020CPAS v.2 20150120 Product data sheet - PMEG3020CPAS v.1 Modifications: • PMEG3020CPAS v.1 20141210 - - PMEG3020CPAS Product data sheet Changed data sheet status Preliminary data sheet All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 15 PMEG3020CPAS NXP Semiconductors 30 V, 2 A low VF dual MEGA Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 January 2015 PMEG3020CPAS Product data sheet All information provided in this document is subject to legal disclaimers. 20 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15