PANASONIC UN1121

Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital circuits
Unit: mm
■ Features
2.5±0.1
1.5
1.0
1.0
0.4
1.5 R0.9
●
●
●
●
●
UN1121
UN1122
UN1123
UN1124
UN112X
UN112Y
(R1)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
0.55±0.1
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
■ Absolute Maximum Ratings
3
0.45±0.05
2
2.5
1
2.5
1.25±0.05
●
Resistance by Part Number
4.1±0.2
2.4±0.2 2.0±0.2
0.85
■
4.5±0.1
3.5±0.1
R0.9
R
0.
7
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0±0.1
●
6.9±0.1
1:Base
2:Collector
3:Emitter
M Type Mold Package
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–500
mA
Total power dissipation
PT
600
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Internal Connection
R1
C
B
R2
E
1
Transistors with built-in Resistor
■ Electrical Characteristics
UN1121/1122/1123/1124/112X/112Y
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
UN112X
Collector cutoff current
UN112X
Conditions
min
VCB = –50V, IE = 0
–1
ICBO
VCB = –50V, IE = 0
– 0.1
ICEO
VCE = –50V, IB = 0
–1
ICEO
VCE = –50V, IB = 0
– 0.5
IEBO
VEB = –6V, IC = 0
–2
VCBO
IC = –10µA, IE = 0
UN1123/1124
–50
UN1121
40
UN1122/112Y
50
hFE
UN1123/1124
VCE = –10V, IC = –100mA
UN112X
60
VCE(sat)
IC = –100mA, IB = –5mA
– 0.25
VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
UN112Y
VCE(sat)
IC = –50mA, IB = –5mA
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = –5V, VB = –3.5V, RL = 500Ω
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
V
– 0.2
200
2.2
UN1122
4.7
UN1123
R1
(–30%)
UN112X
10
UN112Y
(+30%)
3.1
0.8
UN112X
R1/R2
UN112Y
Common characteristics chart
PT — Ta
800
600
400
200
0
80
120
160
Ambient temperature Ta (˚C)
1.0
0.22
0.054
0.67
V
MHz
0.27
UN1124
V
– 0.15
–4.9
UN1121
Resistance ratio
Total power dissipation PT (mW)
mA
20
UN112X
40
µA
V
Collector to emitter saturation voltage
0
µA
–1
Collector to base voltage
Input
resistance
Unit
–5
UN1122/112X/112Y
Forward
current
transfer
ratio
max
ICBO
UN1121
Emitter
cutoff
current
2
typ
1.2
kΩ
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Characteristics charts of UN1121
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–200
IB=–1.0mA
–160
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–120
–0.4mA
–80
–0.3mA
–0.2mA
–40
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
Ta=75˚C
200
100
25˚C
0
–1
–100 –300 –1000
–3
6
4
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
8
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–30
–10000
f=1MHz
IE=0
Ta=25˚C
10
300
Collector current IC (mA)
Cob — VCB
12
VCE= –10V
–25˚C
–0.01
–1
–12
hFE — IC
400
Forward current transfer ratio hFE
–240
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
2
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
–1
–3
–10
–30
–100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UN1122
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–250
IB=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–150
–0.6mA
–0.5mA
–100
–0.4mA
–0.3mA
–0.2mA
–50
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
160
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Ta=75˚C
VCE= –10V
Forward current transfer ratio hFE
–300
120
25˚C
80
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
3
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Cob — VCB
IO — VIN
–10000
20
16
12
8
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
24
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN1123
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–160
–120
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
–100
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
(V)
–3
–30
–25˚C
100
50
0
–1
–100 –300 –1000
–3
16
12
8
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
150
IO — VIN
f=1MHz
IE=0
Ta=25˚C
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
4
–10
–10000
20
25˚C
Collector current IC (mA)
Cob — VCB
24
Ta=75˚C
VCE= –10V
–25˚C
–0.01
–1
–12
hFE — IC
200
Forward current transfer ratio hFE
–240
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Characteristics charts of UN1124
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
–250
IB=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–150
–0.5mA
–0.4mA
–100
–0.3mA
–0.2mA
–50
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
0
0
–2
–4
–6
–8
–10
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–0.01
–1
–12
400
IC/IB=10
–30
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
–30
VCE= –10V
350
300
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
–1
–100 –300 –1000
–3
IO — VIN
–10000
16
12
8
–100 –300 –1000
VIN — IO
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Output current IO (µA)
20
–30
–100
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
24
Collector output capacitance Cob (pF)
hFE — IC
–100
Forward current transfer ratio hFE
–300
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UN112X
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–200
IB=–1.6mA
–160
–1.4mA
–1.2mA
–120
–1.0mA
–0.8mA
–80
–0.6mA
–0.4mA
–40
–0.2mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
240
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
–240
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
5
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Cob — VCB
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
VO=–0.2V
Ta=25˚C
–30
–10
Input voltage VIN (V)
Collector output capacitance Cob (pF)
24
–3
–1
–0.3
–0.1
4
–0.03
0
–1
–3
–10
–30
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
Collector to base voltage VCB (V)
Characteristics charts of UN112Y
IC — VCE
VCE(sat) — IC
IB=–1.2mA
–160
–1.0mA
–0.8mA
–120
–0.6mA
–80
–0.4mA
–40
–0.2mA
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
0
–3
Cob — VCB
–30
f=1MHz
IE=0
Ta=25˚C
16
12
8
VO=–0.2V
Ta=25˚C
–10
–3
–1
–0.3
–0.1
4
–0.03
0
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–0.01
–0.1 –0.3
–1
–3
VCE= –10V
–10
–30
Output current IO (mA)
200
160
Ta=75˚C
25˚C
120
–25˚C
80
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
–30
Input voltage VIN (V)
20
–100 –300 –1000
VIN — IO
–100
24
Collector output capacitance Cob (pF)
–10
Collector current IC (mA)
Collector to emitter voltage VCE (V)
240
Forward current transfer ratio hFE
Collector current IC (mA)
–200
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
6
hFE — IC
–100
–240
–100