Transistors with built-in Resistor UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1.9±0.2 2.9 –0.05 ■ Features ● +0.25 0.65±0.15 For digital circuits ● Unit: mm +0.2 2.8 –0.3 2 ● ● ■ Absolute Maximum Ratings 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C ■ Electrical Characteristics Parameter Emitter cutoff current Internal Connection C R1 B R2 E Conditions min typ max Unit ICBO VCB = 50V, IE = 0 1 µA ICEO VCE = 50V, IB = 0 1 µA IEBO VEB = 6V, IC = 0 VCBO IC = 10µA, IE = 0 50 V VCEO IC = 2mA, IB = 0 50 V UN2221 5 UN2222 2 UN2223/2224 mA 1 Collector to base voltage Collector to emitter voltage Forward UN2221 current UN2222 transfer ratio UN2223/2224 40 hFE VCE = 10V, IC = 100mA 50 60 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 5mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 500Ω Output voltage low level VOL VCC = 5V, VB = 3.5V, RL = 500Ω Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Input resistance EIAJ:SC-59 Mini Type Package (Ta=25˚C) Symbol Collector cutoff current +0.1 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 0.8 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ +0.2 Marking Symbol 9A 9B 9C 9D 0 to 0.1 ● UN2221 UN2222 UN2223 UN2224 1.1 –0.1 ● 0.16 –0.06 ■ Resistance by Part Number 0.25 4.9 V 0.2 200 UN2221/2224 V V MHz 2.2 UN2222 R1 (–30%) 4.7 0.8 1.0 UN2223 (+30%) kΩ 10 Resistance ratio UN2224 R1/R2 1.2 0.22 1 Transistors with built-in Resistor UN2221/2222/2223/2224 Common characteristics chart PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN2221 IC — VCE VCE(sat) — IC IB=1.0mA Ta=25˚C Collector current IC (mA) 250 0.9mA 0.8mA 200 0.7mA 0.6mA 150 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0.1mA 0 0 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 12 1 200 25˚C 100 3 10 30 100 300 1 1000 3 IO — VIN 16 12 8 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance Cob (pF) Ta=75˚C –25˚C 10000 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 4 3 0 0.1 0.3 1 3 10 Collector to base voltage 2 300 0 Cob — VCB 20 VCE=10V 0.01 Collector to emitter voltage VCE (V) 24 hFE — IC 400 Forward current transfer ratio hFE 300 30 100 VCB (V) 1 0.4 0.03 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 Transistors with built-in Resistor UN2221/2222/2223/2224 Characteristics charts of UN2222 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 250 IB=1.0mA 0.9mA 200 0.8mA 0.7mA 150 0.6mA 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0.1mA IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 VCE=10V 0.01 0 0 2 4 6 8 10 10 3 30 100 100 –25˚C 50 300 1000 1 3 6 4 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) Output current IO (µA) 8 10 Collector current IC (mA) IO — VIN 10000 f=1MHz IE=0 Ta=25˚C 10 25˚C Collector current IC (mA) Cob — VCB 12 Ta=75˚C 150 0 1 12 Collector to emitter voltage VCE (V) Collector output capacitance Cob (pF) hFE — IC 200 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 300 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 2 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 0.03 1 0.4 100 VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN2223 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) 200 IB=1.0mA 0.9mA 0.8mA 160 120 0.7mA 0.6mA 0.5mA 80 0.4mA 0.3mA 40 0.2mA 0.1mA hFE — IC IC/IB=10 30 10 3 1 Ta=75˚C 25˚C 0.3 0.1 –25˚C 0.03 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 12 Ta=75˚C VCE=10V 25˚C 150 100 –25˚C 50 0 0.01 0 200 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 1 3 10 30 100 300 Collector current IC (mA) 1000 1 3 10 30 100 300 1000 Collector current IC (mA) 3 Transistors with built-in Resistor UN2221/2222/2223/2224 Cob — VCB IO — VIN 10000 10 8 6 4 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 12 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 2 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 0.03 1 0.4 100 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) VCB (V) 0.3 1 3 10 30 100 Output current IO (mA) Characteristics charts of UN2224 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) 250 IB=1.0mA 200 0.9mA 0.8mA 150 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 0.2mA 0.1mA Collector to emitter saturation voltage VCE(sat) (V) 100 0 IC/IB=10 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 –25˚C 2 4 6 8 10 12 3 –25˚C 50 30 100 300 1 1000 3 6 4 30 100 300 1000 VIN — IO 1000 VO=5V Ta=25˚C 3000 300 1000 100 Input voltage VIN (V) 8 10 Collector current IC (mA) IO — VIN Output current IO (µA) 10 10 10000 f=1MHz IE=0 Ta=25˚C 25˚C 100 Collector current IC (mA) Cob — VCB 12 Ta=75˚C 150 0 1 Collector to emitter voltage VCE (V) Collector output capacitance Cob (pF) VCE=10V 0.01 0 300 100 30 10 VO=0.2V Ta=25˚C 30 10 3 1 2 3 0 0.1 0.3 1 3 10 Collector to base voltage 4 hFE — IC 200 Forward current transfer ratio hFE 300 30 100 VCB (V) 1 0.4 0.3 0.6 0.8 1.0 Input voltage VIN 1.2 (V) 1.4 0.1 0.1 0.3 1 3 10 30 Output current IO (mA) 100