SUD50P10-43L-GE3 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () ID (A) 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 54 nC TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information: SUD50P10-43L-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C)b TC = 70 °C TA = 25 °C - 29.1 ID - 9b, c - 7.2b, c IDM Continuous Source Current (Diode Conduction) Avalanche Current TC = 25 °C TA = 25 °C L = 0.1 mH Single Pulse Avalanche Energy TC = 70 °C TA = 25 °C - 50a IS - 5.75b, c IAS - 35 EAS 61 mJ 113.6 72.7 PD W 6.9b, c 4.4b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 40 TC = 25 °C Maximum Power Dissipation V - 36.4 TA = 70 °C Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 10 s Steady State Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 50 °C/W. Document Number: 62504 S12-1955-Rev. B, 13-Aug-12 Typical Maximum Unit 15 40 0.85 18 50 1.1 °C/W RthJA RthJC For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P10-43L-GE3 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs V - 109 mV/°C 5.9 -1 -3 V ± 100 nA VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 VDS 5 V, VGS = - 10 V - 40 µA A VGS = - 10 V, ID = - 9.2 A 0.036 0.043 VGS = - 4.5 V, ID = - 7.7 A 0.040 0.048 VDS = - 15 V, ID = - 9.2 A 38 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 4600 VDS = - 50 V, VGS = 0 V, f = 1 MHz 175 VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A VDS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A tr Rise Time td(off) Turn-Off Delay Time f = 1 MHz VDD = - 50 V, RL = 6.5 ID - 7.7 A, VGEN = - 10 V, Rg = 1 tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = - 50 V, RL = 6.5 ID - 7.7 A, VGEN = - 4.5 V, Rg = 1 tf Fall Time 106 160 54 81 14 nC 26 td(on) Turn-On Delay Time pF 230 4 15 25 20 30 110 165 100 150 42 65 160 240 100 150 100 150 ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 50 - 40 IS = - 7.7 A IF = - 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 60 90 ns 150 225 nC 46 14 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62504 S12-1955-Rev. B, 13-Aug-12 For technical questions, contact: [email protected] www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P10-43L-GE3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 20 35 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 30 25 20 15 12 8 TA = 125 °C 10 3V 4 25 °C 5 0 0.0 - 55 °C 2V 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 7000 0.044 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 6000 0.042 VGS = 4.5 V 0.040 0.038 VGS = 10 V 5000 Ciss 4000 3000 2000 0.036 1000 0.034 Coss Crss 0 0 5 10 15 20 25 30 35 0 10 ID - Drain Current (A) 20 On-Resistance vs. Drain Current and Gate Voltage 40 50 60 70 80 125 150 Capacitance 2.3 10 ID = 9.2 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 VDS - Drain-to-Source Voltage (V) 8 VDS = 50 V 6 VDS = 80 V 4 2 0 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62504 S12-1955-Rev. B, 13-Aug-12 100 120 ID = 9.2 A 2.0 1.7 VGS = 10 V, 4.5 V 1.4 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P10-43L-GE3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.08 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 1 0.07 TA = 125 °C 0.06 0.05 0.04 TA = 25 °C 0.03 0.02 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 2 1.2 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 2.4 35 2.2 30 25 2.0 I D = 250 µA Power (W) VGS(th) (V) 4 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.8 1.6 20 15 1.4 10 1.2 5 1.0 - 50 3 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by 10 ID - Drain Current (A) 100 μs 1 10 ms, 1 s 1 s, 100 ms 0.1 10 s DC 0.01 TA = 25 °C 0.001 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 62504 S12-1955-Rev. B, 13-Aug-12 For technical questions, contact: [email protected] www.vishay.com 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P10-43L-GE3 Vishay Siliconix 40 140 30 105 Power (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 10 70 35 0 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Single Pulse Power, Junction-to-Ambient IC - Peak Avalanche Current (A) 100 10 TA 1 0.000001 L IA BV - V DD 0.00001 0.0001 0.001 0.01 TA - Time In Avalanche (s) Single Pulse Avalance Capability * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62504 S12-1955-Rev. B, 13-Aug-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P10-43L-GE3 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-2 4. Surface Mounted 10-1 1 10 Square Wave Pulse Duration (s) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62504. Document Number: 62504 S12-1955-Rev. B, 13-Aug-12 For technical questions, contact: [email protected] www.vishay.com 6 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000