SUD50P10-43L-GE3 Datasheet

SUD50P10-43L-GE3
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) ()
ID (A)
0.043 at VGS = - 10 V
- 37
0.048 at VGS = - 4.5 V
- 35
• TrenchFET® Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Qg (Typ.)
54 nC
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
D
Ordering Information:
SUD50P10-43L-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 100
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)b
TC = 70 °C
TA = 25 °C
- 29.1
ID
- 9b, c
- 7.2b, c
IDM
Continuous Source Current (Diode Conduction)
Avalanche Current
TC = 25 °C
TA = 25 °C
L = 0.1 mH
Single Pulse Avalanche Energy
TC = 70 °C
TA = 25 °C
- 50a
IS
- 5.75b, c
IAS
- 35
EAS
61
mJ
113.6
72.7
PD
W
6.9b, c
4.4b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 40
TC = 25 °C
Maximum Power Dissipation
V
- 36.4
TA = 70 °C
Pulsed Drain Current
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t  10 s
Steady State
Junction-to-Ambienta
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 50 °C/W.
Document Number: 62504
S12-1955-Rev. B, 13-Aug-12
Typical
Maximum
Unit
15
40
0.85
18
50
1.1
°C/W
RthJA
RthJC
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L-GE3
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
gfs
V
- 109
mV/°C
5.9
-1
-3
V
± 100
nA
VDS = - 100 V, VGS = 0 V
-1
VDS = - 100 V, VGS = 0 V, TJ = 55 °C
- 10
VDS 5 V, VGS = - 10 V
- 40
µA
A
VGS = - 10 V, ID = - 9.2 A
0.036
0.043
VGS = - 4.5 V, ID = - 7.7 A
0.040
0.048
VDS = - 15 V, ID = - 9.2 A
38

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
4600
VDS = - 50 V, VGS = 0 V, f = 1 MHz
175
VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A
VDS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A
tr
Rise Time
td(off)
Turn-Off Delay Time
f = 1 MHz
VDD = - 50 V, RL = 6.5 
ID  - 7.7 A, VGEN = - 10 V, Rg = 1 
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
VDD = - 50 V, RL = 6.5 
ID  - 7.7 A, VGEN = - 4.5 V, Rg = 1 
tf
Fall Time
106
160
54
81
14
nC
26
td(on)
Turn-On Delay Time
pF
230

4
15
25
20
30
110
165
100
150
42
65
160
240
100
150
100
150
ns
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 50
- 40
IS = - 7.7 A
IF = - 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
60
90
ns
150
225
nC
46
14
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62504
S12-1955-Rev. B, 13-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
20
35
VGS = 10 V thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
30
25
20
15
12
8
TA = 125 °C
10
3V
4
25 °C
5
0
0.0
- 55 °C
2V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
0
0.0
3.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
7000
0.044
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
6000
0.042
VGS = 4.5 V
0.040
0.038
VGS = 10 V
5000
Ciss
4000
3000
2000
0.036
1000
0.034
Coss
Crss
0
0
5
10
15
20
25
30
35
0
10
ID - Drain Current (A)
20
On-Resistance vs. Drain Current and Gate Voltage
40
50
60
70
80
125
150
Capacitance
2.3
10
ID = 9.2 A
R DS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
30
VDS - Drain-to-Source Voltage (V)
8
VDS = 50 V
6
VDS = 80 V
4
2
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62504
S12-1955-Rev. B, 13-Aug-12
100
120
ID = 9.2 A
2.0
1.7
VGS = 10 V, 4.5 V
1.4
1.1
0.8
0.5
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.08
R DS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
40
TJ = 150 °C
10
TJ = 25 °C
1
0.07
TA = 125 °C
0.06
0.05
0.04
TA = 25 °C
0.03
0.02
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
2
1.2
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
2.4
35
2.2
30
25
2.0
I D = 250 µA
Power (W)
VGS(th) (V)
4
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.8
1.6
20
15
1.4
10
1.2
5
1.0
- 50
3
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by
10
ID - Drain Current (A)
100 μs
1
10 ms, 1 s
1 s, 100 ms
0.1
10 s
DC
0.01
TA = 25 °C
0.001
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62504
S12-1955-Rev. B, 13-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L-GE3
Vishay Siliconix
40
140
30
105
Power (W)
ID - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
70
35
0
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
Single Pulse Power, Junction-to-Ambient
IC - Peak Avalanche Current (A)
100
10
TA
1
0.000001
L
IA
BV - V DD
0.00001
0.0001
0.001
0.01
TA - Time In Avalanche (s)
Single Pulse Avalance Capability
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62504
S12-1955-Rev. B, 13-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-2
4. Surface Mounted
10-1
1
10
Square Wave Pulse Duration (s)
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62504.
Document Number: 62504
S12-1955-Rev. B, 13-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
6
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000