New Product SUD50P10-43L Vishay Siliconix P-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET® Power MOSFET Qg (Typ) RoHS 54 nC COMPLIANT TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 TC = 125 °C TA = 25 °C - 31a ID - 9.2b, c - 7.7b, c TA = 125 °C IDM Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C - 50a IS - 6.9b, c IAS - 35 EAS 61 mJ 136 95 PD W 8.3b, c 5.8b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 40 TC = 25 °C Maximum Power Dissipation V - 37.1a TC = 25 °C Continuous Drain Current (TJ = 175 °C)b Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 40 °C/W. Document Number: 73444 S-71660-Rev. B, 06-Aug-07 Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum Unit 15 40 0.85 18 50 1.1 °C/W www.vishay.com 1 New Product SUD50P10-43L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA - 100 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs V - 109 mV/°C 5.9 -1 -3 V ± 100 nA VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≥ 5 V, VGS = - 10 V - 40 µA A VGS = - 10 V, ID = - 9.2 A 0.036 0.043 VGS = - 4.5 V, ID = - 7.7 A 0.040 0.048 VDS = - 15 V, ID = - 9.2 A 38 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 4600 VDS = - 50 V, VGS = 0 V, f = 1 MHz VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A VDS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A td(off) f = 1 MHz VDD = - 50 V, RL = 6.5 Ω ID ≅ - 7.7 A, VGEN = - 10 V, Rg = 1 Ω tf td(on) tr td(off) 106 160 54 81 14 nC 26 td(on) tr pF 230 175 VDD = - 50 V, RL = 6.5 Ω ID ≅ - 7.7 A, VGEN = - 4.5 V, Rg = 1 Ω tf Ω 4 15 25 20 30 110 165 100 150 42 65 160 240 100 150 100 150 ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 50 - 40 IS = - 7.7 A IF = - 7.7 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 60 90 ns 150 225 nC 46 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73444 S-71660-Rev. B, 06-Aug-07 New Product SUD50P10-43L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 20 VGS = 10 thru 4 V 30 I D - Drain Current (A) I D - Drain Current (A) 35 25 20 15 10 16 12 8 TA = 125 °C 3V 4 25 °C 5 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.044 7000 Ciss C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 6000 0.042 VGS = 4.5 V 0.040 0.038 VGS = 10 V 5000 4000 3000 2000 Coss 0.036 1000 0.034 Crss 0 0 5 10 15 20 25 30 35 0 10 ID - Drain Current (A) 20 40 50 60 70 80 125 150 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.3 ID = 9.2 A 2.0 8 rDS(on) – On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 30 VDS = 50 V 6 VDS = 80 V 4 2 ID = 9.2 A VGS = 10 V, 4.5 V 1.7 1.4 1.1 0.8 0 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73444 S-71660-Rev. B, 06-Aug-07 100 120 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SUD50P10-43L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 rDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 0.07 TA = 125 °C 0.06 0.05 0.04 TA = 25 °C 0.03 0.02 1 0.00 0.2 0.4 0.6 0.8 1.0 2 1.2 3 4 VSD - Source-to-Drain Voltage (V) 7 8 9 10 VGS - Gate-to-Source Voltage (V) 2.4 35 2.2 30 ID = 250 µA 25 1.8 Power (W) VGS(th) (V) 6 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.0 5 1.6 20 15 1.4 10 1.2 5 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 175 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (sec) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 100 µs *Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 0.1 10 s dc TA = 25 °C Single Pulse 0.01 0.001 0.1 1 *VGS 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73444 S-71660-Rev. B, 06-Aug-07 New Product SUD50P10-43L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 50 120 40 30 Power ID - Drain Current (A) 100 20 80 60 40 10 20 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Single Pulse Power, Junction-to-Ambient IC - Peak Avalanche Current (A) 100 10 TA L BV IA V DD 1 0.000001 0.00001 0.0001 0.001 0.01 TA - Time In Avalanche (sec) Single Pulse Avalance Capability *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73444 S-71660-Rev. B, 06-Aug-07 www.vishay.com 5 New Product SUD50P10-43L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-2 10-1 1 10 Square Wave Pulse Duration (sec) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73444. www.vishay.com 6 Document Number: 73444 S-71660-Rev. B, 06-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1