SUD15N15-95 Vishay Siliconix N-Channel 150 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () ID (A) 0.095 at VGS = 10 V 15 0.100 at VGS = 6 V 15 • • • • TrenchFET® Power MOSFETS 175 °C Junction Temperature 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary Side Switch TO-252 D Drain Connected to Tab G D G S Top View S Ordering Information: SUD15N15-95-E3 (Lead (Pb) free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 8.7 25 Continuous Source Current (Diode Conduction) IS 15 Avalanche Current IAR 15 EAR 11.3 Repetitive Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH TC = 25 °C Maximum Power Dissipation TA = 25 °C 62 PD A mJ b W 2.7a TJ, Tstg Operating Junction and Storage Temperature Range V 15 ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol t 10 s Junction-to-Ambienta Steady State Typical Maximum 16 20 RthJA RthJC Junction-to-Case 45 55 2 2.4 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. Document Number: 71641 S13-0104-Rev. D, 21-Jan-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD15N15-95 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 120 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) V VDS = 120 V, VGS = 0 V, TJ = 175 °C VDS =5 V, VGS = 10 V Forward RDS(on) Transconductanceb gfs µA 250 25 VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb nA A 0.077 0.095 VGS = 10 V, ID = 15 A, TJ = 125 °C 0.190 VGS = 10 V, ID = 15 A, TJ = 175 °C 0.250 VGS = 6 V, ID = 10 A 0.081 VDS = 15 V, ID = 15 A 25 VGS = 0 V, VDS = 25 V, f = 1 MHz 115 0.100 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 20 VDS = 75 V, VGS = 10 V, ID = 15 A 1 td(on) Rise Timec tr c td(off) Fall Timec 25 nC 5.5 7 Rg Gate Resistance Turn-On Delay Timec pF 70 Qgd Gate-Drain Charge Turn-Off Delay Time 900 VDD = 75 V, RL = 5 ID 15 A, VGEN = 10 V, RG = 2.5 tf 3.2 8 12 35 55 17 25 30 45 ns Source-Drain Diode Ratings and Characteristic (TC = 25 °C) ISM Pulsed Current Diode Forward Voltage b Source-Drain Reverse Recovery Time 25 A VSD IF = 15 A, VGS = 0 V 0.9 1.5 V trr IF = 15 A, dI/dt = 100 A/µs 55 85 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 71641 S13-0104-Rev. D, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 25 25 VGS = 10 thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 5V 10 5 3V 15 10 TC = 125 °C 5 25 °C 4V - 55 °C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.14 40 TC = - 55 °C 25 °C 24 RDS(on)- On-Resistance () g fs - Transconductance (S) 0.12 32 125 °C 16 8 0.10 VGS = 6 V 0.08 VGS = 10 V 0.06 0.04 0.02 0.00 0 0 5 10 15 20 0 25 5 10 ID - Drain Current (A) 20 25 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1500 V GS - Gate-to-Source Voltage (V) 20 1200 C - Capacitance (pF) 15 Ciss 900 600 300 Crss Coss 0 VDS = 75 V ID = 15 A 16 12 8 4 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71641 S13-0104-Rev. D, 21-Jan-13 100 0 8 16 24 32 40 Qg - Total Gate Charge (nC) Gate Charge For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 100 VGS = 10 V ID = 15 A 2.4 2.0 I S - Source Current (A) R DS(on)- On-Resistance (Normalized) 2.8 1.6 1.2 0.8 TJ = 150 °C 10 TJ = 25 °C 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0.3 0 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 100 20 I D - Drain Current (A) I D - Drain Current (A) 10 µs Limited by R DS(on)* 15 10 5 100 µs 10 1 ms 1 10 ms 100 ms 1 s, DC TC = 25 °C Single Pulse 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71641. www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 71641 S13-0104-Rev. D, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000