DINTEK DTU15N10

D56/
www.daysemi.jp
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
ID (A)
0.095 at VGS = 10 V
15
0.100 at VGS = 6 V
15
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• 100 % Rg Tested
APPLICATIONS
D
• Primary Side Switch
TO-252
G
G
D
S
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 125 °C
8.7
25
Continuous Source Current (Diode Conduction)
IS
15
Avalanche Current
IAR
15
EAR
11.3
Repetitive Avalanche Energy (Duty Cycle  1 %)
Maximum Power Dissipation
L = 0.1 mH
TC = 25 °C
TA = 25 °C
A
mJ
62b
PD
W
2.7a
TJ, Tstg
Operating Junction and Storage Temperature Range
V
15
ID
IDM
Pulsed Drain Current
Unit
°C
- 55 to 175
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Junction-to-Ambienta
Junction-to-Case
t  10 s
Steady State
RthJA
RthJC
Typical
Maximum
16
20
45
55
2
2.4
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
V
VDS = 100 V, VGS = 0 V, TJ = 175 °C
VDS =5 V, VGS = 10 V
Forward
Transconductanceb
RDS(on)
gfs
µA
250
15
VGS = 10 V, ID = 15 A
Drain-Source On-State Resistanceb
nA
A
0.077
0.095
VGS = 10 V, ID = 15 A, TJ = 125 °C
0.190
VGS = 10 V, ID = 15 A, TJ = 175 °C
0.250
VGS = 6 V, ID = 10 A
0.081
VDS = 15 V, ID = 15 A
25
VGS = 0 V, VDS = 25 V, f = 1 MHz
115

0.100
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
20
VDS = 75 V, VGS = 10 V, ID = 15 A
Rise Timec
Fall Timec
1
td(on)
tr
c
td(off)
25
5.5
nC
7
Rg
Gate Resistance
Turn-On Delay Timec
pF
70
Qgd
Gate-Drain Charge
Turn-Off Delay Time
900
VDD = 75 V, RL = 5 
ID  15 A, VGEN = 10 V, RG = 2.5 
tf
3.2
8
12
35
55
17
25
30
45

ns
Source-Drain Diode Ratings and Characteristic (TC = 25 °C)
ISM
Pulsed Current
15
A
Voltageb
VSD
IF = 15 A, VGS = 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
trr
IF = 15 A, dI/dt = 100 A/µs
55
85
ns
Diode Forward
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS (25 °C unless noted)
25
25
VGS = 10 thru 6 V
20
I D - Drain Current (A)
I D - Drain Current (A)
20
15
5V
10
5
3V
15
10
TC = 125 °C
5
25 °C
4V
- 55 °C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.14
40
TC = - 55 °C
25 °C
24
RDS(on)- On-Resistance ()
g fs - Transconductance (S)
0.12
32
125 °C
16
8
0.10
VGS = 6 V
0.08
VGS = 10 V
0.06
0.04
0.02
0.00
0
0
5
10
15
20
0
25
5
10
ID - Drain Current (A)
20
25
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
1500
V GS - Gate-to-Source Voltage (V)
20
1200
C - Capacitance (pF)
15
Ciss
900
600
300
Crss
Coss
0
VDS = 75 V
ID = 15 A
16
12
8
4
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
100
0
8
16
24
32
40
Qg - Total Gate Charge (nC)
Gate Charge
3
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TYPICAL CHARACTERISTICS (25 °C unless noted)
100
VGS = 10 V
ID = 15 A
2.4
2.0
I S - Source Current (A)
R DS(on)- On-Resistance (Normalized)
2.8
1.6
1.2
0.8
TJ = 150 °C
10
TJ = 25 °C
0.4
0.0
- 50
- 25
0
25
50
75
100
125
150
1
175
0.3
0
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
100
20
I D - Drain Current (A)
I D - Drain Current (A)
10 µs
Limited by R DS(on)*
15
10
5
100 µs
10
1 ms
1
TC = 25 °C
Single Pulse
0
0
25
50
75
100
125
TC - Case Temperature (°C)
150
175
0.1
0.1
Maximum Avalanche Drain Current
vs. Case Temperature
10 ms
100 ms
1 s, DC
1
10
1000
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
4
1
10
Package Information
TO-252AA CASE OUTLINE
E
C2
L3
H
D
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
e
L5
L4
b
INCHES
MILLIMETERS
A
b3
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
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Application Note
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
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