SUD40N10-25 N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested Available RoHS* COMPLIANT TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD40N10-25 SUD40N10-25-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage Parameter VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 23 70 Continuous Source Current (Diode Conduction) IS 40 Avalanche Current IAS 40 EAS 80 Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C A mJ 136b PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range V 40 ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Symbol t ≤ 10 s Steady State Junction-to-Case RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. 1/7 www.freescale.net.cn Unit °C/W SUD40N10-25 N-Channel 100 V (D-S) 175 °C MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) 3.0 VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V Forward Transconductanceb RDS(on) µA A 0.02 0.025 VGS = 10 V, ID = 40 A, TJ = 125 °C 0.05 VGS = 10 V, ID = 40 A, TJ = 175 °C 0.063 VGS = 4.5 V, ID = 20 A 0.022 VDS = 15 V, ID = 40 A 70 gfs nA 250 70 VGS = 10 V, ID = 40 A Drain-Source On-State Resistanceb V Ω 0.028 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge 120 40 VDS = 50 V, VGS = 10 V, ID = 40 A Rise Timec Fall Timec 1 td(on) tr c td(off) 60 11 nC 9 Rg Turn-On Delay Timec pF 290 Qgd Gate Resistance Turn-Off Delay Time 2400 VGS = 0 V, VDS = 25 V, F = 1 MHz VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω tf 3.5 8 13 40 60 15 25 80 120 Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °C ISM Pulsed Current 70 A Voltageb VSD IF = 40 A, VGS = 0 V 1.0 1.5 V Source-Drain Reverse Recovery Time trr IF = 40 A, dI/dt = 100 A/µs 75 120 ns Diode Forward Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/7 www.freescale.net.cn SUD40N10-25 N-Channel 100 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 160 VGS = 10 thru 6 V 5V 80 I D - Drain Current (A) I D - Drain Current (A) 120 80 4V 60 TC = 125 °C 40 - 55 °C 25 °C 40 20 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 0.05 TC = - 55 °C 25 °C 60 R DS(on) - On-Resistance (Ω) gfs - Transconductance (S) 80 125 °C 40 20 0 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 10 20 30 40 50 60 0 20 40 ID - Drain Current (A) 100 On-Resistance vs. Drain Current 20 VGS - Gate-to-Source Voltage (V) 4000 3000 C - Capacitance (pF) 80 I D - Drain Current (A) Transconductance Ciss 2000 1000 Crss Coss VDS = 50 V ID = 40 A 16 12 8 4 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance 3/7 60 100 0 20 40 60 Q g - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 80 SUD40N10-25 N-Channel 100 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 3.0 VGS = 10 V ID = 40 A IS - Source Current (A) 2.0 (Normalized) R DS(on) - On-Resistance 2.5 1.5 1.0 TJ = 175 °C 10 TJ = 25 °C 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0.3 0 0.6 0.9 1.2 TJ - Junction Temperature ( °C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 100 50 Limited by R DS(on)* 100 µs I D - Drain Current (A) 40 ID - Drain Current (A) 10 µs 30 20 10 1 ms 10 ms 100 ms 1 s, DC 1 TC = 25 °C Single Pulse 10 0 0 25 50 75 100 125 150 175 0.1 0.1 TC - Case Temperature (°C) Maximum Avalanche Drain Current vs. Case Temperature 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case 4/7 www.freescale.net.cn 30 SUD40N10-25 N-Channel 100 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 5/7 www.freescale.net.cn 0.410 SUD40N10-25 N-Channel 100 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 6/7 Return to Index www.freescale.net.cn SUD40N10-25 N-Channel 100 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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