Si4948BEY Datasheet

Si4948BEY
Vishay Siliconix
Dual P-Channel 60-V (D-S) 175° MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
ID (A)
0.120 at VGS = - 10 V
- 3.1
0.150 at VGS = - 4.5 V
- 2.8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
S1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
Top View
Ordering Information: Si4948BEY-T1-E3 (Lead (Pb)-free)
Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TA = 70 °C
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
IS
L = 0.1 mH
TA = 25 °C
TA = 70 °C
- 2.4
- 2.6
- 2.0
- 25
- 1.1
IAS
15
11
mJ
2.4
1.4
1.7
0.95
TJ, Tstg
Operating Junction and Storage Temperature Range
A
-2
EAS
PD
V
- 3.1
IDM
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
ID
Unit
- 55 to 175
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
53
62.5
85
110
30
37
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
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Si4948BEY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
-1
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = - 60 V, VGS = 0 V
-1
VDS = - 60 V, VGS = 0 V, TJ = 70 °C
- 10
VDS = - 5 V, VGS = - 10 V
RDS(on)
Forward Transconductancea
-3
± 100
µA
- 25
A
VGS = - 10 V, ID = - 3.1 A
0.100
0.120
VGS = - 4.5 V, ID = - 0.2 A
0.126
0.150
gfs
VDS = - 15 V, ID = - 3.1 A
8.5
VSD
IS = - 2 A, VGS = 0 V
- 0.8
- 1.2
14.5
22
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A
3.7
f = 1 MHz
VDD = - 30 V, RL = 30 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Ω
14
td(on)
Turn-On Delay Time
nC
2.2
IF = - 2 A, dI/dt = 100 A/µs
10
15
15
22
50
75
35
55
30
50
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
25
VGS = 10 V thru 5 V
20
I D - Drain Current (A)
I D - Drain Current (A)
20
15
4V
10
5
15
10
TC = 125 °C
5
25 °C
3V
- 55 °C
0
0
0
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
7
8
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.40
1000
800
0.30
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.35
0.25
0.20
VGS = 4.5 V
0.15
VGS = 10 V
Ciss
600
400
0.10
200
Coss
0.05
0.00
Crss
0
0
5
10
15
20
25
0
10
ID - Drain Current (A)
20
40
50
60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
2.2
10
VDS = 30 V
ID = 3.1 A
VGS = 10 V
ID = 3.1 A
2.0
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
30
6
4
1.8
1.6
1.4
1.2
1.0
2
0.8
0.6
- 50
0
0
3
6
9
12
15
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
20
175
0.40
0.35
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
IS - Source Current (A)
10
0.30
0.25
ID = 3.1 A
0.20
0.15
0.10
TJ = 25 °C
0.05
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
10
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Si4948BEY
Vishay Siliconix
0.6
50
0.4
40
ID = 250 µA
Power (W)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
0.0
30
20
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
10- 3
150
10- 2
10- 1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
IDM Limited
I D - Drain Current (A)
10
Limited
by RDS(on)*
P(t) = 0.0001
1
P(t) = 0.001
ID(on)
Limited
0.1
0.01
0.1
P(t) = 0.01
P(t) = 0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1
10
P(t) = 1
P(t) = 10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72847.
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000