Si4933DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.014 at VGS = - 4.5 V - 9.8 0.017 at VGS = - 2.5 V - 8.9 0.022 at VGS = - 1.8 V - 7.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4933DY-T1-E3 (Lead (Pb)-free) Si4933DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 9.8 - 7.4 - 5.9 - 30 - 1.7 - 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range V - 7.8 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 85 110 26 35 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71980 S09-0867-Rev. D, 18-May-09 www.vishay.com 1 Si4933DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS(th) VDS = VGS, ID = - 500 µA - 0.40 - 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Static Gate Threshold Voltage Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage a VDS = - 5 V, VGS = - 4.5 V µA - 30 A VGS = - 4.5 V, ID = - 9.8 A 0.0115 0.014 VGS = - 2.5 V, ID = - 8.9 A 0.014 0.017 VGS = - 1.8 V, ID = - 5.0 A 0.018 0.022 gfs VDS = - 10 V, ID = - 9.8 A 40 VSD IS = - 1.7 A, VGS = 0 V - 0.7 - 1.2 46 70 VDS = 6 V, VGS = - 4.5 V, ID = - 9.8 A 6.0 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 13 VDD = 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = - 1.7 A, dI/dt = 100 A/µs 35 55 47 70 320 480 260 390 210 315 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 V thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 1.5 V 18 12 6 18 12 TC = 125 °C 6 25 °C - 55 °C 1V 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 Document Number: 71980 S09-0867-Rev. D, 18-May-09 Si4933DY Vishay Siliconix 0.030 6000 0.025 5000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 VGS = 1.8 V 0.015 VGS = 2.5 V 0.010 4000 3000 2000 Coss VGS = 4.5 V 1000 0.005 Crss 0 0.000 0 6 12 18 24 0 30 2 4 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 12 1.6 5 VGS = 4.5 V ID = 9.8 A VDS = 6 V ID = 9.8 A 1.4 4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) Ciss 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 10 20 30 40 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 30 0.030 0.025 RDS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 10 TJ = 25 °C ID = 3 A 0.020 ID = 9.8 A 0.015 0.010 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71980 S09-0867-Rev. D, 18-May-09 1.4 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4933DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 40 ID = 500 µA 0.2 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10-1 1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 IDM Limited Limited by RDS(on)* P(t) = 0.0001 P(t) = 0.001 ID - Drain Current (A) 10 P(t) = 0.01 1 0.1 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71980 S09-0867-Rev. D, 18-May-09 Si4933DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71980. Document Number: 71980 S09-0867-Rev. 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