Si4320DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.003 at VGS = 10 V 25 0.004 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II • Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET Technology APPLICATIONS • Synchronous Buck Low-Side - Notebook - Server - Workstation • Synchronous Rectifier-POL SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4320DY-T1-E3 (Lead (Pb)-free) Si4320DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Steady State 30 Pulsed Drain Current (10 µs Pulse Width) IS 25 17 20 13 70 TA = 25 °C TA = 70 °C PD 1.3 50 3.5 1.6 2.2 1 TJ, Tstg Operating Junction and Storage Temperature Range A 2.9 IAS Avalanche Current Unit V ± 20 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 10 s - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical 29 Maximum 35 Unit 67 80 °C/W 13 16 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72212 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 1 Si4320DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) 3.0 ± 100 µA 30 A VGS = 10 V, ID = 25 A 0.0024 0.003 VGS = 4.5 V, ID = 22 A 0.0032 0.004 gfs VDS = 15 V, ID = 25 A 110 VSD IS = 2.9 A, VGS = 0 V 0.72 Ω S 1.1 V b Dynamic Input Capacitance Ciss 6500 Output Capacitance Coss Reverse Transfer Capacitance Crss 610 Total Gate Charge Qg 45 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 4.5 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A tr td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr 70 nC 20 16 Ω f = 1.0 MHz 1.1 27 40 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 21 35 107 160 43 65 45 70 td(on) Turn-On Delay Time Rise Time pF 930 IF = 2.9 A, dI/dt = 100 A/µs ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 V thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 40 30 20 TC = 125 °C 10 10 25 °C 3V 0 0.0 www.vishay.com 2 0.4 0.8 1.2 - 55 °C 1.6 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 72212 S09-0221-Rev. C, 09-Feb-09 Si4320DY Vishay Siliconix 0.005 8500 0.004 6800 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance ( Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.003 VGS = 10 V 0.002 C iss 5100 3400 0.001 1700 0.000 0 Coss Crss 0 10 20 30 40 50 0 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 VDS = 15 V ID = 20 A VGS = 10 V ID = 25 A 1.4 R DS(on) - On-Resistance (Normalized) 5 4 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 10 20 30 40 50 60 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.015 RDS(on) - On-Resistance (Ω) 50 I S - Source Current (A) 12 On-Resistance vs. Drain Current 6 VGS - Gate-to-Source Voltage (V) 6 10 TJ = 150 °C TJ = 25 °C 1 0.012 ID = 25 A 0.009 0.006 0.003 0.000 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72212 S09-0221-Rev. C, 09-Feb-09 10 www.vishay.com 3 Si4320DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 60 ID = 250 µA 50 0.0 40 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 20 - 0.6 10 - 0.8 - 1.0 - 50 30 - 25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 TJ - Temperature (°C) 1 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 0.01 0.01 TC = 25 °C Single Pulse DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72212 S09-0221-Rev. C, 09-Feb-09 Si4320DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 67 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72212. Document Number: 72212 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000