DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 BAS45A Low-leakage diode Product data sheet Supersedes data of June 1994 1996 Mar 13 NXP Semiconductors Product data sheet Low-leakage diode BAS45A FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package. • Repetitive peak forward current: max. 625 mA • Low reverse current: max. 1 nA k handbook, halfpage a • Switching time: typ. 1.5 μs. MAM156 APPLICATION • Low leakage current applications. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. − 125 V − 125 V − 250 mA − 625 mA tp = 1 μs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A Tamb = 25 °C − 300 VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 see Fig.2; note 1 UNIT Ptot total power dissipation Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C Note 1. Device mounted on a printed-circuit board without metallization pad. 1996 Mar 13 2 mW NXP Semiconductors Product data sheet Low-leakage diode BAS45A ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS TYP. MAX. UNIT see Fig.3 IF = 1 mA − 780 mV IF = 10 mA − 860 mV IF = 100 mA − 1 000 mV VR = 125 V; Emax = 100 lx − 1 nA VR = 30 V; Tj = 125 °C; Emax = 100 lx − 300 nA VR = 125 V; Tj = 125 °C; Emax = 100 lx − 500 nA VR = 125 V; Tj = 150 °C; Emax = 100 lx − 2 μA − 4 pF 1.5 − μs see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 8 mm from the body 300 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed-circuit board without metallization pad. 1996 Mar 13 3 NXP Semiconductors Product data sheet Low-leakage diode BAS45A GRAPHICAL DATA MBG522 300 MBG523 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 200 200 100 100 0 0 100 Tamb (oC) (2) (3) 0 0 200 0.5 Device mounted on a printed-circuit board without metallization pad. (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Fig.3 Maximum permissible continuous forward current as a function of ambient temperature. 1.0 VF (V) 1.5 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (μs) Based on square wave currents;Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Mar 13 4 104 NXP Semiconductors Product data sheet Low-leakage diode BAS45A MBD456 4 10halfpage handbook, IR (nA) 3 MBG524 3 handbook, halfpage Cd (pF) 10 2 max 10 2 typ 10 1 1 10 1 0 50 100 T j ( oC) 0 150 0 5 VR = 125 V. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. handbook, full pagewidth tr 10 15 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. RS = 50 Ω V = VR IF x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal Fig.7 Reverse recovery time test circuit and waveforms. 1996 Mar 13 t rr 5 output signal NXP Semiconductors Product data sheet Low-leakage diode BAS45A PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min Dimensions in mm. The black marking band indicates the cathode. Fig.8 SOD68 (DO-34). 1996 Mar 13 6 MSA212 - 1 NXP Semiconductors Product data sheet Low-leakage diode BAS45A DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1996 Mar 13 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 1996 Mar 13