DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V k handbook, halfpage a • Repetitive peak forward current: max. 450 mA. MAM156 The diodes are type branded. APPLICATIONS • High-speed switching Fig.1 Simplified outline (SOD68; DO-34) and symbol. • Protection diodes in reed relays. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 75 V VR continuous reverse voltage − 75 V IF continuous forward current − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 Ptot total power dissipation − 500 Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C 1996 Sep 03 Tamb = 25 °C 2 mW NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. − 1 000 mV VR = 20 V − 25 nA VR = 20 V; Tj = 150 °C − 50 µA VR = 50 V − 100 nA VR = 50 V; Tj = 150 °C − 100 µA IN4531 − 4 pF IN4532 − 2 pF when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns − 2 ns when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns − 3 V VF forward voltage IF = 10 mA; see Fig.3 IR reverse current see Fig.5 IN4531 IN4532 Cd trr diode capacitance reverse recovery time IN4531 IN4532 reverse recovery time IN4532 Vfr forward recovery voltage UNIT f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 100 mA; tr ≤ 30 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 5 mm 120 K/W Rth j-a thermal resistance from junction to ambient lead length 5 mm; note 1 350 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Sep 03 3 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 GRAPHICAL DATA MBG450 300 MBG458 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 (1) (3) 200 100 0 0 0 Tamb (oC) 100 0 200 1 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Lead length 5 mm. Fig.2 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 03 4 104 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 MGD004 MGD010 103 handbook, halfpage 1.2 handbook, halfpage IR (µA) Cd (pF) 102 1.0 10 0.8 1 0.6 10−1 10−2 0 100 Tj (oC) 0.4 200 0 VR = 50 V Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1996 Sep 03 5 10 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R = 50 Ω i V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I V 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 03 6 t tp output signal NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min Dimensions in mm. Fig.9 SOD68 (DO-34). 1996 Sep 03 7 MSA212 - 1 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1996 Sep 03 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands Date of release: 1996 Sep 03