DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V k handbook, halfpage • Repetitive peak forward current: max. 450 mA. APPLICATIONS a MAM156 The diodes are type branded. • High-speed switching • Protection diodes in reed relays. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 75 V VR continuous reverse voltage − 75 V IF continuous forward current − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 − 500 storage temperature −65 +200 °C junction temperature − 200 °C Ptot total power dissipation Tstg Tj 1996 Sep 03 Tamb = 25 °C 2 mW Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. − 1000 mV VR = 20 V − 25 nA VR = 20 V; Tj = 150 °C − 50 µA VF forward voltage IF = 10 mA; see Fig.3 IR reverse current see Fig.5 IN4531 VR = 50 V − 100 nA VR = 50 V; Tj = 150 °C − 100 µA IN4531 − 4 pF IN4532 − 2 pF when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns − 2 ns when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns − 3 V IN4532 Cd trr diode capacitance reverse recovery time IN4531 IN4532 reverse recovery time IN4532 Vfr UNIT forward recovery voltage f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 100 mA; tr ≤ 30 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 5 mm 120 K/W Rth j-a thermal resistance from junction to ambient lead length 5 mm; note 1 350 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1996 Sep 03 3 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 GRAPHICAL DATA MBG450 300 MBG458 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 (1) 100 (3) 200 0 0 0 Tamb (oC) 100 200 0 1 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Lead length 5 mm. Fig.2 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 03 4 104 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 MGD010 103 handbook, halfpage MGD004 1.2 handbook, halfpage IR (µA) 10 Cd (pF) 2 1.0 10 0.8 1 0.6 10−1 10−2 0 100 Tj (oC) 0.4 200 0 VR = 50 V Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1996 Sep 03 5 10 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 03 6 t tp output signal Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. Fig.9 SOD68 (DO-34). DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 03 7