SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low figure-of-merit (FOM): Ron x Qg 650 RDS(on) max. () at 25 °C VGS = 10 V • Low input capacitance (Ciss) 0.099 Qg max. (nC) 150 • Reduced switching and conduction losses Qgs (nC) 24 • Ultra low gate charge (Qg) Qgd (nC) 42 • Avalanche energy rated (UIS) Configuration Single Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-220AB APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) G • Power factor correction power supplies (PFC) • Lighting G D - High-intensity discharge (HID) S S - Fluorescent ballast lighting N-Channel MOSFET • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP33N60E-E3 Lead (Pb)-free and Halogen-free SiHP33N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Current a ID IDM Linear Derating Factor UNIT V 33 21 A 88 2.2 W/°C mJ Single Pulse Avalanche Energy b EAS 793 Maximum Power Dissipation PD 278 W TJ, Tstg -55 to +150 °C Operating Junction and Storage Temperature Range Drain-Source Voltage Slope VDS = 0 V to 80 % VDS Reverse Diode dV/dt d Soldering Recommendations (Peak temperature) c for 10 s dV/dt 70 12 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7.5 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S16-0799-Rev. F, 02-May-16 Document Number: 91523 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP33N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Case (Drain) RthJC - 0.45 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance a VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.71 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ±1 VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 10 - 0.083 0.099 - 11 - S VGS = 10 V ID = 16.5 A VDS = 30 V, ID = 16.5 A μA Dynamic Input Capacitance Ciss VGS = 0 V, - 3508 - Output Capacitance Coss VDS = 100 V, - 156 - Reverse Transfer Capacitance Crss f = 1 MHz - 6 - Effective Output Capacitance, Energy Related b Co(er) - 136 - Effective Output Capacitance, Time Related c Co(tr) - 468 - - 100 150 - 24 - pF VGS = 0 V, VDS = 0 V to 480 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 42 - Turn-On Delay Time td(on) - 28 56 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 16.5 A, VDS = 480 V nC VDD = 480 V, ID = 16.5 A Rg = 9.1 , VGS = 10 V - 60 90 - 99 150 - 54 80 f = 1 MHz, open drain 0.2 0.7 1.0 - - 33 S - - 88 TJ = 25 °C, IS = 16.5 A, VGS = 0 V - 0.9 1.2 V - 503 1006 ns - 8.5 17 μC - 26 - A ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. c. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S16-0799-Rev. F, 02-May-16 Document Number: 91523 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP33N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V BOTTOM 6.0 V 80 ID = 16.5 A TJ = 25 °C 2.5 RDS(on) - On-Resistance (Normalized) 100 ID - Drain Current (A) 3.0 TOP 60 40 2.0 1.5 1.0 0.5 20 VGS = 10 V 5.0 V 0.0 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) - 60 - 40 - 20 30 0 20 60 80 100 120 140 160 Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics 100 000 70 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V BOTTOM 6.0 V 50 40 TJ = 150 °C 10 000 C - Capacitance (pF) 60 ID - Drain Current (A) 40 TJ - Junction Temperature (°C) 30 Ciss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd x Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 Coss 100 20 10 Crss 10 5.0 V 0 0 5 1 10 15 20 25 VDS - Drain-to-Source Voltage (V) 0 30 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 120 25 5000 20 80 60 Coss Eoss 500 10 Eoss (μJ) 15 Coss (pF) ID, Drain-to-Source Current (A) 100 40 TJ = 150 °C 5 20 TJ = 25 °C 0 0 50 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S16-0799-Rev. F, 02-May-16 25 0 100 200 300 VDS 400 500 600 Fig. 6 - COSS and EOSS vs. VDS Document Number: 91523 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP33N60E www.vishay.com Vishay Siliconix 35 24 30 VDS = 120 V ID, Drain Current (A) VGS - Gate-to-Source Voltage (V) VDS = 300 V 20 16 VDS = 480 V 12 8 25 20 15 10 4 5 0 0 40 80 120 160 0 200 25 50 75 Qg - Total Gate Charge (nC) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 125 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 750 100 VDS , Drain -to -Source Breakdown Voltage (V) 1000 IS - Source Current (A) 100 TC - Temperature (°C) TJ = 150 °C ġ 10 TJ = 25 °C ġ 1 0.1 725 700 675 650 625 600 ġ VGS = 0 V 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1.4 1.6 575 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ,Temperature (°C) Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature 1000 Operation in this area limited by RDS(on)* IDM Limited ID, Drain Current (A) 100 10 Limited by RD (on) * 100 µs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 0.1 1 10 ms BVDSS Limited 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S16-0799-Rev. F, 02-May-16 Document Number: 91523 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP33N60E www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ 12 V 0.2 µF 0.3 µF D.U.T RG + - IAS + V DD D.U.T. - VDS VGS 10 V tp 0.01 Ω 3 mA IG ID Current sampling resistors Fig. 15 - Unclamped Inductive Test Circuit S16-0799-Rev. F, 02-May-16 Fig. 18 - Gate Charge Test Circuit Document Number: 91523 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP33N60E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91523. S16-0799-Rev. F, 02-May-16 Document Number: 91523 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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