SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting - LED lighting • Industrial - Welding - Induction heating - Motor drives • Battery chargers • Renewable energy - Solar (PV inverters) TO-220AB G G D Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP30N60E-E3 Lead (Pb)-free and Halogen-free SiHP30N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID UNIT V 29 18 A IDM 65 2 W/°C Single Pulse Avalanche Energy b EAS 690 mJ Maximum Power Dissipation PD 250 W TJ, Tstg -55 to +150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt VDS = 0 V to 80 % VDS d Soldering Recommendations (Peak Temperature) c for 10 s dV/dt 70 18 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S15-0277- Rev. G, 23-Feb-15 Document Number: 91456 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP30N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Case (Drain) RthJC - 0.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. VDS TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 μA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 250 μA - 0.64 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 2.8 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS VGS = ± 30 V - - ±1 VDS = 600 V, VGS = 0 V - - 1 VDS = 600 V, VGS = 0 V, TJ = 150 °C - - 100 μA - 0.104 0.125 Ω gfs VDS = 8 V, ID = 3 A - 5.4 - S Input Capacitance Ciss 2600 - Coss - 138 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1.0 MHz - Output Capacitance - 3 - Effective Output Capacitance, Energy Related b Co(er) - 98 - Effective Output Capacitance, Time Related c Co(tr) - 346 - - 85 130 - 15 - - 39 - Drain-Source On-State Resistance Forward Transconductance a RDS(on) VGS = 10 V ID = 15 A Dynamic pF VDS = 0 V to 480 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 19 40 tr VDD = 380 V, ID = 15 A, VGS = 10 V, Rg = 4.7 Ω - 32 65 - 63 95 - 36 75 f = 1 MHz, open drain - 0.63 - - - 29 - - 65 Rise Time Turn-Off Delay Time td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 15 A, VDS = 480 V nC ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 15 A, VGS = 0 V TJ = 25 °C, IF = IS = 15 A, dI/dt = 100 A/μs, VR = 20 V - - 1.3 V - 402 605 ns - 7 15 μC - 32 65 A Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S15-0277- Rev. G, 23-Feb-15 Document Number: 91456 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP30N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 3.0 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V ID - Drain Current (A) 60 TJ = 25 °C 50 40 30 20 VGS = 10 V 2.0 1.5 1.0 0.5 5V 10 ID = 15 A 2.5 RDS(on) - On-Resistance (Normalized) 70 0.0 0 0 5 10 15 20 25 - 60 - 40 - 20 30 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 50 10 000 Ciss TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 30 20 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd x Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 C - Capacitance (pF) ID - Drain Current (A) 40 100 Coss 10 10 Crss TJ = 150 °C 1 0 0 5 10 15 20 25 0 30 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 80 18 16 TJ = 25 °C 14 2000 TJ = 150 °C 40 10 Coss Eoss 8 200 Eoss (μJ) 12 Coss (pF) ID, Drain Current (A) 60 6 20 4 2 0 20 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-0277- Rev. G, 23-Feb-15 25 0 0 100 200 300 400 500 600 VDS Fig. 6 - Coss and Eoss vs. VDS Document Number: 91456 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP30N60E www.vishay.com Vishay Siliconix 24 30.0 VDS = 300 V 25.0 VDS = 120 V 16 VDS = 480 V 12 8 ID, Drain Current (A) VGS - Gate-to-Source Voltage (V) ID = 15 A 20 20.0 15.0 10.0 4 5.0 0 0 0 25 50 75 100 125 150 25 50 75 125 150 TC - Temperature (°C) Qg - Total Gate Charge (nC) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature 1000 VDS, Drain-to-Source Breakdown Voltage (V) 725 100 IS - Source Current (A) 100 TJ = 150 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 700 675 650 625 600 575 550 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ - Temperature (°C) Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Temperature vs. Drain-to-Source Voltage 1000 ID, Drain Current (A) Operation in this area limited by RDS(on) 100 IDM Limited 10 100 μs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 10 ms BVDSS Limited 0.1 0.1 100 1 10 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S15-0277- Rev. G, 23-Feb-15 Document Number: 91456 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP30N60E www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case VGS VDS RD VDS tp VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 16 - Unclamped Inductive Waveforms Fig. 13 - Switching Time Test Circuit VDS 90 % QG 10 V QGS 10 % VGS QGD VG td(on) td(off) tf tr Fig. 14 - Switching Time Waveforms Charge Fig. 17 - Basic Gate Charge Waveform L Vary tp to obtain required IAS VDS Current regulator Same type as D.U.T. D.U.T RG + - IAS V DD 50 kΩ 12 V 0.2 µF 0.3 µF 10 V tp + 0.01 Ω Fig. 15 - Unclamped Inductive Test Circuit D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S15-0277- Rev. G, 23-Feb-15 Document Number: 91456 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP30N60E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91456. S15-0277- Rev. G, 23-Feb-15 Document Number: 91456 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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