VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA • Fully isolated package • Easy to use and parallel • Low on-resistance • Simple drive requirements • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-227 APPLICATIONS • • • • PRODUCT SUMMARY High efficiency synchronous rectification SMPS Uninterruptible power supply High speed power switching Hard switched and high frequency circuits DESCRIPTION VDSS 200 V RDS(on) 0.0048 ID 220 A Type Modules - MOSFET Package SOT-227 This generation of power MOSFETs from Vishay Semiconductors provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 400 W to 700 W. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 200 V MOSFET Drain to source voltage Continuous drain current at VGS 10 V Pulsed drain current Power dissipation Gate to source voltage VDSS ID (1) TC = 25 °C TC = 100 °C IDM (2) PD 220 158 A 520 TC = 25 °C 789 TC = 100 °C 395 W VGS ± 30 V Single pulse avalanche energy EAS (3) 1200 mJ Avalanche current IAR (4) 70 A Repetitive avalanche energy EAR (4) 600 mJ Operating junction temperature range TJ -55 to +175 Operating storage temperature range TStg -55 to +175 Insulation withstand voltage (AC-RMS) VISOL 2.5 MODULE °C kV Notes (1) Maximum continuous drain current at V GS 10 V must be limited to 100 A to do not exceed the maximum temperature of power terminals. (2) Repetitive rating; pulse width limited by maximum junction temperature. (3) Limited by T max., starting T = 25 °C, L = 0.23 mH, R = 25 , I J J g AS = 102 A, VGS = 10 V. Part not recommended for use above this value. (4) Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 °C, L = 0.23 mH, R = 25 , V J g GS = 10 V, duty cycle 1 %. Revision: 01-Jun16 Document Number: 94846 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC220SA20 www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS °C TJ, TStg -55 - 175 Junction to case RthJC - - 0.19 Case to heatsink RthCS - 0.05 - Junction and storage temperature range Flat, greased surface Weight Mounting torque °C/W - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - Case style 1.3 (11.5) Nm (lbf.in) SOT-227 ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage SYMBOL V(BR)DSS V(BR)DSS/TJ RDS(on) (1) VGS(th) Forward transconductance gfs Gate resistance, internal Rg Drain to source leakage current Gate to source forward leakage Gate to source reverse leakage IDSS IGSS Total gate charge Qg Gate to source charge Qgs Gate to drain ("Miller") charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. 200 - - V - 0.21 - V/°C VGS = 10 V, ID = 150 A - 4.8 7.0 m VDS = VGS, ID = 500 μA 3 4 5.1 VDS = VGS, ID = 500 μA, TJ = 125 °C - 2.5 - VDS = 20 V, ID = 150 A - 385 - S - 2 - VGS = 0 V, ID = 1.0 mA Reference to 25 °C, ID = 1.0 mA VDS = 200 V, VGS = 0 V - 1 50 VDS = 200 V, VGS = 0 V, TJ = 125 °C - 40 1000 VDS = 200 V, VGS = 0 V, TJ = 175 °C - 2 10 VGS = 20 V - - 250 VGS = -20 V - - -250 ID = 150 A, VDS = 100 V, VGS = 10 V, see fig.15 and fig.19 (1) - 350 - - 120 - - 110 - VDD = 120 V, ID = 150 A, Rg = 5, L = 500 μH, diode used: 20CZU02 - 360 - - 245 - - 205 - - 220 - - 350 - - 243 - - 210 - - 175 - tf VDD = 120 V, ID = 150 A, Rg = 5, L = 500 μH, TJ = 125 °C, diode used: 20CZU02 Internal source inductance LS Between lead, and center of die contact - 5 - Input capacitance Ciss - 21 000 - Output capacitance Coss - 1600 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 50 V, f = 1.0 MHz, see fig.14 - 320 - Drain to case capacitance Cd-cs VGS = 0 V, (G-S shortened); f = 1 MHz - 43 - Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) UNITS V μA mA nA nC ns ns nH pF Revision: 01-Jun16 Document Number: 94846 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC220SA20 www.vishay.com Vishay Semiconductors SOURCE-DRAIN RATINGS AND CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Continuous source current (body diode) IS TEST CONDITIONS MIN. TYP. MAX. - 220 ISM (1) MOSFET symbol showing the integral reverse p-n junction diode - Pulsed source current (body diode) - - 520 TJ = 25 °C, IS = 150 A, VGS = 0 V - 0.87 1.0 Diode forward voltage VSD (2) TJ = 125 °C, IS = 150 A, VGS = 0 V - 0.75 - TJ = 175 °C, IS = 150 A, VGS = 0 V - 0.70 - Reverse recovery time trr - 170 - Reverse recovery current Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Forward turn-on time ton TJ = 25 °C, IF = 50 A, dIF/dt = 100 A/μs, VR = 100 V (2) TJ = 125 °C, IF = 50 A, dIF/dt = 100 A/μs, VR = 100 V (2) UNITS A V ns - 12 - A - 1060 - nC - 200 - ns - 15 - A - 1550 - nC Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) Notes (1) Repetitive rating; pulse width limited by maximum junction temperature. (2) Pulse width 300 μs, duty cycle 2 % IDS -Drain-to-Source to Current (A) Allowable Case Temperature (°C) 180 160 140 DC 120 100 80 60 40 20 300 VGS = 15 V VGS = 12 V 275 250 VGS = 10 V VGS = 8 V VGS = 7 V 225 200 175 150 125 100 75 VGS = 6 V 50 25 0 0 0 50 100 150 200 0 250 1 1.5 2 VDS - Drain-to-Source Voltage (V) IDS - Continuous Drain-Source Current (A) Fig. 1 - Maximum DC MOSFET Drain-Source Current vs. Case Temperature 0.5 Fig. 3 - Typical Drain-to-Source Current Output Characteristics, at TJ = 25 °C IDS -Drain-to-Source to Current (A) IDS - Drain-to-Source current (A) 300 TJ = 125 °C 100 TJ = 25 °C 10 TJ = 175 °C 1 0.1 0.01 0.10 1.00 10.00 VDS - Drain-to-Source Voltage (V), at VGS = 10 V Fig. 2 - Typical Drain-to-Source Current Output Characteristics, VGS = 10 V 275 250 VGS = 15 V VGS = 12 V 225 200 175 VGS = 10 V VGS = 8 V VGS = 7 V 150 125 100 VGS = 6 V 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 VDS - Drain-to-Source Voltage (V) Fig. 4 - Typical Drain-to-Source Current Output Characteristics, at TJ = 125 °C Revision: 01-Jun16 Document Number: 94846 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC220SA20 www.vishay.com Vishay Semiconductors 200 275 250 ID - Drain-to-Source Current (A) IDS -Drain-to-Source to Current (A) 300 VGS = 15 V VGS = 12 V 225 200 175 VGS = 10 V VGS = 8 V VGS = 7 V 150 125 100 VGS = 6 V 75 50 25 0 180 160 140 120 TJ = 125 °C 100 TJ = 175 °C 80 60 40 TJ = 25 °C 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig. 8 - Typical MOSFET Transfer Characteristics 10 20 IDS = 150 A IDSS - Drain to Source current (mA) RDS(on) - Drain-to-Source On-Resistance (mΩ) Fig. 5 - Typical Drain-to-Source Current Output Characteristics, at TJ = 175 °C VGS = 10 V 15 10 5 1 TJ = 175 °C 0.1 0.01 TJ = 125 °C 0.001 TJ = 25 °C 0.0001 1E -05 0 0 20 40 60 0 80 100 120 140 160 180 20 40 60 80 100 120 140 160 180 200 220 VDS - Drain-to-Source Voltage (V) Fig. 6 - Typical Drain-to-Source On-Resistance vs. Temperature Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current 5 280 VGSTH - Threshold Voltage (V) IFSD - Forward Source to Drain Current (A) TJ - Junction Temperature (°C) 240 200 160 TJ = 175 °C 120 TJ = 125 °C 80 40 0 0.2 0.4 0.6 0.8 1.0 1.2 4 TJ = 25 °C 3.5 3 TJ = 125 °C 2.5 2 1.5 1 0.5 TJ = 25 °C 0.0 4.5 1.4 VFSD - Drain to Source Forward Voltage Drop Characteristics (V) Fig. 7 - Typical Body Diode Forward Voltage Drop Characteristics 0 0.20 0.40 0.60 0.80 1.00 1.20 ID (mA) Fig. 10 - Typical MOSFET Threshold Voltage Revision: 01-Jun16 Document Number: 94846 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC220SA20 www.vishay.com Vishay Semiconductors 1 1 Switching Time (μs) Switching Time (μs) td(on) td(on) tr td(off) tf 0.1 td(off) tr tf 0.1 0.01 0.01 20 40 60 80 100 120 140 0 160 10 20 30 40 50 60 Rg (Ω) IDS - Drain-to-Source Current (A) Fig. 11 - Typical MOSFET Switching Time vs. IDS, TJ =125 °C, VDD = 120 V, VGS = 10 V, L = 500 μH, Rg = 5 Diode Used: 20CZU02 Fig. 12 - Typical MOSFET Switching Time vs. Rg, TJ =125 °C, IDS = 150 A, VDD = 120 V, VGS = 10 V, L = 500 μH Diode Used: 20CZU02 Z thJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 PDM D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.01 0.001 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1./t2 2. Peak TJ = PDM x ZthJC + TC . 0.01 0.1 1 Rectangular Pulse Duration (s) Fig. 13 - Maximum Thermal Impedance ZthJC Characteristics, MOSFET 25 000 16 22 500 VGS, Gate to Source Voltage (V) Ciss (pF) C - Capacitance (pF) 20 000 VGS = 0 V; f = 1 MHz Ciss = Cgs + Cgd; Cds shorted Crss = Cgd Coss = Cds + Cgd 17 500 15 000 12 500 10 000 7500 Coss (pF) Crss (pF) 5000 2500 ID = 150 A 14 VDS = 40 V 12 10 VDS = 100 V 8 6 VDS = 160 V 4 2 0 0 1 10 100 VDS - Drain-to-Source Voltage (V) Fig. 14 - Typical Capacitance vs. Drain-to-Source Voltage 0 40 80 120 160 200 240 280 320 360 400 Qg - Total Gate Charge (nC) Fig. 15 - Typical Gate Charge vs. Gate-to-Source Voltage Revision: 01-Jun16 Document Number: 94846 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC220SA20 www.vishay.com Vishay Semiconductors IDS - Drain-Source Current (A) 10 000 Operation in this area limited by RDS(on) 1000 100 100 μs DC 10 1 ms 10 ms 1 TC = 25 °C TJ = 175 °C Single Pulse 0.1 0.1 1 10 100 1000 VDS - Drain-Source Voltage (V) Fig. 16 - Maximum Safe Operating Area RD VDS VDS VGS 90% D.U.T. RG + - VDD 10 V 0% Pulse width ≤ 1 µs Duty factor ≤ 0.1 % GS td(on) Fig. 17 a - Switching Time Test Circuit tr t d(off) tf Fig. 17 b - Switching Time Waveform V(BR)DSS 15 V tp L VDS D.U.T RG IAS 20 V tp Driver + - VDD 0.01 W 18 a - Unclamped Inductive Test Circuit A I AS Fig. 18 b - Unclamped Inductive Waveform Revision: 01-Jun16 Document Number: 94846 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC220SA20 www.vishay.com Vishay Semiconductors Current regulator Same type as D.U.T. 50 KW .2 µF 12 V .3 µF QG D.U.T. + V - DS 10V QGS QGD VGS 3 mA VG IG ID Current sampling resistors Charge Fig. 19 a - Basic Gate Charge Waveform Fig. 19 b - Gate Charge Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 4 - - + 1 RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test + - VDD Fig. 19 c - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive P.W. D= Period P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 20 - For N-Channel Power MOSFETs Revision: 01-Jun16 Document Number: 94846 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC220SA20 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- F C 220 S A 20 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - MOSFET module 3 - MOSFET die generation 4 - Current rating (220 = 220 A) 5 - S = single switch 6 - Package indicator SOT-227 7 - Voltage rating (20 = 200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) 3 (D) 2 (G) 4 (S) 1 (S) G (2) S (1-4) Lead Assignment Single switch S (S) (D) 4 3 1 2 (S) (G) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 01-Jun16 Document Number: 94846 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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