VS-FC220SA20 Datasheet

VS-FC220SA20
www.vishay.com
Vishay Semiconductors
SOT-227 Power Module
Single Switch - Power MOSFET, 220 A
FEATURES
• Enhanced body diode dV/dt and dIF/dt capability
• Improved gate avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche SOA
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Simple drive requirements
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SOT-227
APPLICATIONS
•
•
•
•
PRODUCT SUMMARY
High efficiency synchronous rectification SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
DESCRIPTION
VDSS
200 V
RDS(on)
0.0048 
ID
220 A
Type
Modules - MOSFET
Package
SOT-227
This generation of power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 400 W to 700 W. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
200
V
MOSFET
Drain to source voltage
Continuous drain current at VGS 10 V
Pulsed drain current
Power dissipation
Gate to source voltage
VDSS
ID (1)
TC = 25 °C
TC = 100 °C
IDM (2)
PD
220
158
A
520
TC = 25 °C
789
TC = 100 °C
395
W
VGS
± 30
V
Single pulse avalanche energy
EAS (3)
1200
mJ
Avalanche current
IAR (4)
70
A
Repetitive avalanche energy
EAR (4)
600
mJ
Operating junction temperature range
TJ
-55 to +175
Operating storage temperature range
TStg
-55 to +175
Insulation withstand voltage (AC-RMS)
VISOL
2.5
MODULE
°C
kV
Notes
(1) Maximum continuous drain current at V
GS 10 V must be limited to 100 A to do not exceed the maximum temperature of power terminals.
(2) Repetitive rating; pulse width limited by maximum junction temperature.
(3) Limited by T max., starting T = 25 °C, L = 0.23 mH, R = 25 , I
J
J
g
AS = 102 A, VGS = 10 V. Part not recommended for use above this value.
(4) Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 °C, L = 0.23 mH, R = 25 , V
J
g
GS = 10 V, duty cycle 1 %.
Revision: 01-Jun16
Document Number: 94846
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
°C
TJ, TStg
-55
-
175
Junction to case
RthJC
-
-
0.19
Case to heatsink
RthCS
-
0.05
-
Junction and storage temperature range
Flat, greased surface
Weight
Mounting torque
°C/W
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
Case style
1.3 (11.5) Nm (lbf.in)
SOT-227
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Static drain to source on-resistance
Gate threshold voltage
SYMBOL
V(BR)DSS
V(BR)DSS/TJ
RDS(on) (1)
VGS(th)
Forward transconductance
gfs
Gate resistance, internal
Rg
Drain to source leakage current
Gate to source forward leakage
Gate to source reverse leakage
IDSS
IGSS
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain ("Miller") charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
V
-
0.21
-
V/°C
VGS = 10 V, ID = 150 A
-
4.8
7.0
m
VDS = VGS, ID = 500 μA
3
4
5.1
VDS = VGS, ID = 500 μA, TJ = 125 °C
-
2.5
-
VDS = 20 V, ID = 150 A
-
385
-
S
-
2
-

VGS = 0 V, ID = 1.0 mA
Reference to 25 °C, ID = 1.0 mA
VDS = 200 V, VGS = 0 V
-
1
50
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
40
1000
VDS = 200 V, VGS = 0 V, TJ = 175 °C
-
2
10
VGS = 20 V
-
-
250
VGS = -20 V
-
-
-250
ID = 150 A,
VDS = 100 V,
VGS = 10 V,
see fig.15 and fig.19 (1)
-
350
-
-
120
-
-
110
-
VDD = 120 V,
ID = 150 A,
Rg = 5,
L = 500 μH,
diode used: 20CZU02
-
360
-
-
245
-
-
205
-
-
220
-
-
350
-
-
243
-
-
210
-
-
175
-
tf
VDD = 120 V,
ID = 150 A,
Rg = 5,
L = 500 μH,
TJ = 125 °C,
diode used: 20CZU02
Internal source inductance
LS
Between lead, and center of die contact
-
5
-
Input capacitance
Ciss
-
21 000
-
Output capacitance
Coss
-
1600
-
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = 50 V,
f = 1.0 MHz,
see fig.14
-
320
-
Drain to case capacitance
Cd-cs
VGS = 0 V, (G-S shortened); f = 1 MHz
-
43
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
UNITS
V
μA
mA
nA
nC
ns
ns
nH
pF
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SOURCE-DRAIN RATINGS AND CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Continuous source current (body diode)
IS
TEST CONDITIONS
MIN.
TYP.
MAX.
-
220
ISM (1)
MOSFET symbol showing the integral
reverse p-n junction diode
-
Pulsed source current (body diode)
-
-
520
TJ = 25 °C, IS = 150 A, VGS = 0 V
-
0.87
1.0
Diode forward voltage
VSD (2)
TJ = 125 °C, IS = 150 A, VGS = 0 V
-
0.75
-
TJ = 175 °C, IS = 150 A, VGS = 0 V
-
0.70
-
Reverse recovery time
trr
-
170
-
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Forward turn-on time
ton
TJ = 25 °C, IF = 50 A, dIF/dt = 100 A/μs, 
VR = 100 V (2)
TJ = 125 °C, IF = 50 A, dIF/dt = 100 A/μs, 
VR = 100 V (2)
UNITS
A
V
ns
-
12
-
A
-
1060
-
nC
-
200
-
ns
-
15
-
A
-
1550
-
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature.
(2) Pulse width  300 μs, duty cycle  2 %
IDS -Drain-to-Source to Current (A)
Allowable Case Temperature (°C)
180
160
140
DC
120
100
80
60
40
20
300
VGS = 15 V
VGS = 12 V
275
250
VGS = 10 V
VGS = 8 V
VGS = 7 V
225
200
175
150
125
100
75
VGS = 6 V
50
25
0
0
0
50
100
150
200
0
250
1
1.5
2
VDS - Drain-to-Source Voltage (V)
IDS - Continuous Drain-Source Current (A)
Fig. 1 - Maximum DC MOSFET Drain-Source Current vs.
Case Temperature
0.5
Fig. 3 - Typical Drain-to-Source Current Output Characteristics,
at TJ = 25 °C
IDS -Drain-to-Source to Current (A)
IDS - Drain-to-Source current (A)
300
TJ = 125 °C
100
TJ = 25 °C
10
TJ = 175 °C
1
0.1
0.01
0.10
1.00
10.00
VDS - Drain-to-Source Voltage (V), at VGS = 10 V
Fig. 2 - Typical Drain-to-Source Current Output Characteristics,
VGS = 10 V
275
250
VGS = 15 V
VGS = 12 V
225
200
175
VGS = 10 V
VGS = 8 V
VGS = 7 V
150
125
100
VGS = 6 V
75
50
25
0
0
0.5
1
1.5
2
2.5
3
3.5
VDS - Drain-to-Source Voltage (V)
Fig. 4 - Typical Drain-to-Source Current Output Characteristics,
at TJ = 125 °C
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200
275
250
ID - Drain-to-Source Current (A)
IDS -Drain-to-Source to Current (A)
300
VGS = 15 V
VGS = 12 V
225
200
175
VGS = 10 V
VGS = 8 V
VGS = 7 V
150
125
100
VGS = 6 V
75
50
25
0
180
160
140
120
TJ = 125 °C
100
TJ = 175 °C
80
60
40
TJ = 25 °C
20
0
0
0.5 1
1.5 2
2.5 3
3.5 4
4.5 5
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Fig. 8 - Typical MOSFET Transfer Characteristics
10
20
IDS = 150 A
IDSS - Drain to Source current
(mA)
RDS(on) - Drain-to-Source On-Resistance (mΩ)
Fig. 5 - Typical Drain-to-Source Current Output Characteristics,
at TJ = 175 °C
VGS = 10 V
15
10
5
1
TJ = 175 °C
0.1
0.01
TJ = 125 °C
0.001
TJ = 25 °C
0.0001
1E -05
0
0
20
40
60
0
80 100 120 140 160 180
20 40 60 80 100 120 140 160 180 200 220
VDS - Drain-to-Source Voltage (V)
Fig. 6 - Typical Drain-to-Source On-Resistance vs. Temperature
Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current
5
280
VGSTH - Threshold Voltage (V)
IFSD - Forward Source to Drain Current (A)
TJ - Junction Temperature (°C)
240
200
160
TJ = 175 °C
120
TJ = 125 °C
80
40
0
0.2
0.4
0.6
0.8
1.0
1.2
4
TJ = 25 °C
3.5
3
TJ = 125 °C
2.5
2
1.5
1
0.5
TJ = 25 °C
0.0
4.5
1.4
VFSD - Drain to Source Forward Voltage Drop Characteristics (V)
Fig. 7 - Typical Body Diode Forward Voltage Drop Characteristics
0
0.20
0.40
0.60
0.80
1.00
1.20
ID (mA)
Fig. 10 - Typical MOSFET Threshold Voltage
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1
1
Switching Time (μs)
Switching Time (μs)
td(on)
td(on)
tr
td(off)
tf
0.1
td(off)
tr
tf
0.1
0.01
0.01
20
40
60
80
100
120
140
0
160
10
20
30
40
50
60
Rg (Ω)
IDS - Drain-to-Source Current (A)
Fig. 11 - Typical MOSFET Switching Time vs. IDS,
TJ =125 °C, VDD = 120 V, VGS = 10 V, L = 500 μH, Rg = 5 
Diode Used: 20CZU02
Fig. 12 - Typical MOSFET Switching Time vs. Rg,
TJ =125 °C, IDS = 150 A, VDD = 120 V, VGS = 10 V, L = 500 μH
Diode Used: 20CZU02
Z thJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
PDM
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
0.01
0.001
0.00001
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1./t2
2. Peak TJ = PDM x ZthJC + TC
.
0.01
0.1
1
Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance ZthJC Characteristics, MOSFET
25 000
16
22 500
VGS, Gate to Source Voltage (V)
Ciss (pF)
C - Capacitance (pF)
20 000
VGS = 0 V; f = 1 MHz
Ciss = Cgs + Cgd; Cds shorted
Crss = Cgd
Coss = Cds + Cgd
17 500
15 000
12 500
10 000
7500
Coss (pF)
Crss (pF)
5000
2500
ID = 150 A
14
VDS = 40 V
12
10
VDS = 100 V
8
6
VDS = 160 V
4
2
0
0
1
10
100
VDS - Drain-to-Source Voltage (V)
Fig. 14 - Typical Capacitance vs. Drain-to-Source Voltage
0
40 80 120 160 200 240 280 320 360 400
Qg - Total Gate Charge (nC)
Fig. 15 - Typical Gate Charge vs. Gate-to-Source Voltage
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IDS - Drain-Source Current (A)
10 000
Operation in this area
limited by RDS(on)
1000
100
100 μs
DC
10
1 ms
10 ms
1
TC = 25 °C
TJ = 175 °C
Single Pulse
0.1
0.1
1
10
100
1000
VDS - Drain-Source Voltage (V)
Fig. 16 - Maximum Safe Operating Area
RD
VDS
VDS
VGS
90%
D.U.T.
RG
+
- VDD
10 V
0%
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
GS
td(on)
Fig. 17 a - Switching Time Test Circuit
tr
t d(off)
tf
Fig. 17 b - Switching Time Waveform
V(BR)DSS
15 V
tp
L
VDS
D.U.T
RG
IAS
20 V
tp
Driver
+
- VDD
0.01 W
18 a - Unclamped Inductive Test Circuit
A
I AS
Fig. 18 b - Unclamped Inductive Waveform
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Current regulator
Same type as D.U.T.
50 KW
.2 µF
12 V
.3 µF
QG
D.U.T.
+
V
- DS
10V
QGS
QGD
VGS
3 mA
VG
IG
ID
Current sampling resistors
Charge
Fig. 19 a - Basic Gate Charge Waveform
Fig. 19 b - Gate Charge Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
3
+
2
4
-
-
+
1
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - Device under test
+
-
VDD
Fig. 19 c - Peak Diode Recovery dV/dt Test Circuit
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig. 20 - For N-Channel Power MOSFETs
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ORDERING INFORMATION TABLE
Device code
VS-
F
C
220
S
A
20
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
MOSFET module
3
-
MOSFET die generation
4
-
Current rating (220 = 220 A)
5
-
S = single switch
6
-
Package indicator SOT-227
7
-
Voltage rating (20 = 200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
D (3)
3
(D)
2
(G)
4
(S)
1
(S)
G (2)
S (1-4)
Lead Assignment
Single switch
S
(S)
(D)
4
3
1
2
(S)
(G)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
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Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation II
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Revision: 02-Aug-12
Document Number: 95423
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