SiHA20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.184 92 Qgs (nC) 10 Qgd (nC) 19 Configuration Single APPLICATIONS Thin-Lead TO-220 FULLPAK D • Computing - PC silver box / ATX power supplies • Lighting - Two stage LED lighting • Consumer electronics G GD Low input capacitance (Ciss) Reduced switching and conduction losses Low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S • Applications using hard switched topologies - Power factor correction (PFC) - Two switch forward converter - Flyback converter • Switch mode power supplies (SMPS) S N-Channel MOSFET ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA20N50E-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) e VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID UNIT V 19 12 A IDM 42 1.4 W/°C Single Pulse Avalanche Energy b EAS 204 mJ Maximum Power Dissipation PD 34 W TJ, Tstg -55 to +150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope VDS = 0 V to 80 % VDS Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c for 10 s dV/dt 70 32 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 3.8 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. e. Limited by maximum junction temperature. S15-0278-Rev. B, 23-Feb-15 Document Number: 91638 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA20N50E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 3.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 500 V, VGS = 0 V - - 1 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 10 Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS μA - 0.160 0.184 Ω gfs VDS = 30 V, ID = 10 A - 4.4 - S Input Capacitance Ciss 1640 - Coss - 87 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output Capacitance - 6 - Effective Output Capacitance, Energy Related a Co(er) - 73 - Effective Output Capacitance, Time Related b Co(tr) - 222 - - 46 92 - 10 - Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V ID = 10 A Dynamic pF VDS = 0 V to 400 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 10 A, VDS = 400 V Gate-Drain Charge Qgd - 19 - Turn-On Delay Time td(on) - 17 34 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg nC VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1 Ω - 27 54 - 48 96 - 25 50 f = 1 MHz, open drain - 0.83 - - - 19 - - 42 - - 1.2 V - 293 - ns - 4.0 - μC - 26 - A ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 10 A, VGS = 0 V TJ = 25 °C, IF = IS = 10 A, dI/dt = 100 A/μs, VR = 25 V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S15-0278-Rev. B, 23-Feb-15 Document Number: 91638 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA20N50E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 3.0 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V ID = 10 A TJ = 25 °C RDS(on), Drain-to-Source On-Resistance (Normalized) 30 20 10 2.5 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) - 60 - 40 - 20 30 Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 10 000 40 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 30 TJ = 150 °C Ciss 1000 C, Capacitance (pF) ID, Drain-to-Source Current (A) 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 20 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd Coss 100 Crss 10 10 1 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) 0 30 Fig. 2 - Typical Output Characteristics 100 200 300 400 VDS, Drain-to-Source Voltage (V) 500 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 9 50 7 6 30 Coss (pF) ID, Drain-to-Source Current (A) 8 5000 TJ = 25 °C 40 TJ = 150 °C 20 5 Eoss Coss 4 500 Eoss (μJ) ID, Drain-to-Source Current (A) 50 3 2 10 1 VDS = 29.4 V 50 0 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-0278-Rev. B, 23-Feb-15 25 0 0 100 200 300 400 500 VDS Fig. 6 - Coss and Eoss vs. VDS Document Number: 91638 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA20N50E www.vishay.com Vishay Siliconix 20 VDS = 400 V VDS = 250 V VDS = 100 V 20 15 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 16 12 8 5 4 0 0 0 20 40 60 80 Qg, Total Gate Charge (nC) 100 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 25 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 100 650 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 10 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain Voltage (V) Fig. 8 - Typical Source-Drain Diode Forward Voltage 100 Operation in this Area Limited by RDS(on) 625 600 575 550 525 500 ID = 250 μA 475 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage IDM Limited ID, Drain Current (A) 10 100 μs Limited by RDS(on)* 1 1 ms 10 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse 0.01 1 BVDSS Limited 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S15-0278-Rev. B, 23-Feb-15 Document Number: 91638 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA20N50E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform L Vary tp to obtain required IAS Current regulator Same type as D.U.T. VDS 50 kΩ D.U.T RG + - IAS 12 V 0.2 µF 0.3 µF V DD + D.U.T. 10 V tp 0.01 Ω - VDS VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S15-0278-Rev. B, 23-Feb-15 Document Number: 91638 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA20N50E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91638. S15-0278-Rev. B, 23-Feb-15 Document Number: 91638 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220 FULLPAK Thin Lead E ØP A n A2 d2 d3 d1 D L2 L1 b2 x 3 bx3 A2 c e DIMENSIONS SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.30 4.70 0.169 0.185 A1 2.50 2.90 0.098 0.114 A2 2.50 2.70 0.098 0.106 b 0.60 0.80 0.024 0.031 b2 0.60 0.90 0.024 0.035 c - 0.60 - 0.024 D 8.30 8.70 0.327 0.342 d1 14.70 15.30 0.579 0.602 d2 2.90 3.10 0.114 0.122 d3 3.40 3.60 0.134 0.142 E 9.70 10.30 0.382 0.406 e 2.50 2.70 0.098 0.106 0.543 L 13.40 13.80 0.528 L1 2.50 2.80 0.098 0.110 L2 - 1.20 - 0.047 n 6.05 6.15 0.238 0.242 ØP 3.00 3.40 0.118 0.134 ECN: X15-0319-Rev. B, 12-Oct-15 DWG: 6021 Revision: 12-Oct-15 1 Document Number: 62649 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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