SiHG33N65E Datasheet

SiHG33N65E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Low figure-of-merit (FOM) Ron x Qg
700
RDS(on) typ. () at 25 °C
VGS = 10 V
• Low input capacitance (Ciss)
0.090
Qg max. (nC)
173
• Reduced switching and conduction losses
Qgs (nC)
29
• Ultra low gate charge (Qg)
Qgd (nC)
49
• Avalanche energy rated (UIS)
Configuration
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
APPLICATIONS
TO-247AC
•
•
•
•
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free and Halogen-free
SiHG33N65E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
650
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
UNIT
V
32.4
21
A
IDM
101
2.5
W/°C
Single Pulse Avalanche Energy b
EAS
596
mJ
Maximum Power Dissipation
PD
313
W
TJ, Tstg
-55 to +150
°C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dt d
Soldering Recommendations (Peak temperature) c
for 10 s
dV/dt
70
16
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 6.5 A.
c. 1.6 mm from case.
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S15-2685-Rev. A, 16-Nov-15
Document Number: 91716
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG33N65E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
0.4
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
VDS
VGS = 0 V, ID = 250 μA
650
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.84
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
VGS = ± 20 V
-
-
± 100
nA
μA
IGSS
IDSS
VGS = ± 30 V
-
-
±1
VDS = 650 V, VGS = 0 V
-
-
1
VDS = 520 V, VGS = 0 V, TJ = 125 °C
-
-
10
μA
-
0.090
0.105

gfs
VDS = 30 V, ID = 16.5 A
-
11.5
-
S
Input Capacitance
Ciss
4040
-
Coss
-
123
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1.0 MHz
-
Output Capacitance
-
6
-
Effective Output Capacitance, Energy
Related a
Co(er)
-
121
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
501
-
-
115
173
-
29
-
Drain-Source On-State Resistance
Forward Transconductance a
RDS(on)
VGS = 10 V
ID = 16.5 A
Dynamic
pF
VDS = 0 V to 520 V, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
49
-
Turn-On Delay Time
td(on)
-
35
70
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 16.5 A, VDS = 520 V
nC
VDD = 520 V, ID = 16.5 A,
VGS = 10 V, Rg = 9.1 
-
67
100
-
103
155
-
60
90
f = 1 MHz, open drain
0.25
0.50
1.0
-
-
32.4
S
-
-
101
TJ = 25 °C, IS = 16.5 A, VGS = 0 V
-
-
1.2
V
-
605
-
ns
-
11
-
μC
-
28
-
A
ns

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = IS = 16.5 A,
dI/dt = 100 A/μs, VR = 25 V
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S15-2685-Rev. A, 16-Nov-15
Document Number: 91716
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG33N65E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
100
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
80
60
ID = 16.5 A
TJ = 25 °C
RDS(on), Drain-to-Source On-Resistance
(Normalized)
ID, Drain-to-Source Current (A)
TOP
40
20
2.0
1.5
1.0
VGS = 10 V
0.5
0
0
0
5
10
15
VDS, Drain-to-Source Voltage (V)
-60 -40 -20
20
Fig. 1 - Typical Output Characteristics, TC = 25 °C
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
100 000
60
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
40
VGS = 0 V, f = 1 MHz
Ciss = Cgs + C gd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
TJ = 150 °C
10 000
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
2.5
20
Ciss
1000
100
Coss
10
Crss
1
0.1
0
0
5
10
15
VDS, Drain-to-Source Voltage (V)
0
20
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25
5000
TJ = 25 °C
20
60
TJ = 150 °C
15
Coss
Eoss
500
10
40
Eoss (μJ)
80
Coss (pF)
ID, Drain-to-Source Current (A)
100
5
20
VDS = 26.2 V
0
50
0
5
10
15
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-2685-Rev. A, 16-Nov-15
20
0
0
100
200
300
VDS
400
500
600
Fig. 6 - Coss and Eoss vs. VDS
Document Number: 91716
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG33N65E
www.vishay.com
Vishay Siliconix
VDS = 520 V
VDS = 325 V
VDS = 130 V
20
30
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
24
16
12
8
20
10
4
0
0
0
60
120
180
Qg, Total Gate Charge (nC)
25
240
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
50
75
100
125
TC, Case Temperature (°C)
150
Fig. 10 - Maximum Drain Current vs. Case Temperature
875
VDS, Drain-to-Source Breakdown Voltage (V)
ISD, Reverse Drain Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
VGS = 0 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage (V)
1.4
1.6
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Operation in this Area
Limited by RDS(on)
ID, Drain Current (A)
100
850
825
800
775
750
725
700
675
ID = 250 μA
650
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
IDM Limited
10
100 μs
Limited by RDS(on)*
1 ms
1
10 ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
BVDSS Limited
0.01
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S15-2685-Rev. A, 16-Nov-15
Document Number: 91716
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG33N65E
www.vishay.com
Vishay Siliconix
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
Pulse Time (s)
0.1
1
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
VGS
VDS
RD
VDS
tp
VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
90 %
QG
10 V
QGS
10 %
VGS
QGD
VG
td(on)
td(off) tf
tr
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
Vary tp to obtain
required IAS
VDS
50 kΩ
12 V
0.2 µF
0.3 µF
D.U.T
RG
+
-
IAS
+
V DD
D.U.T.
-
VDS
VGS
10 V
tp
0.01 Ω
3 mA
IG
ID
Current sampling resistors
Fig. 15 - Unclamped Inductive Test Circuit
S15-2685-Rev. A, 16-Nov-15
Fig. 18 - Gate Charge Test Circuit
Document Number: 91716
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG33N65E
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91716.
S15-2685-Rev. A, 16-Nov-15
Document Number: 91716
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000