SiHG33N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) typ. () at 25 °C VGS = 10 V • Low input capacitance (Ciss) 0.090 Qg max. (nC) 173 • Reduced switching and conduction losses Qgs (nC) 29 • Ultra low gate charge (Qg) Qgd (nC) 49 • Avalanche energy rated (UIS) Configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D APPLICATIONS TO-247AC • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) G S D G S N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG33N65E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID UNIT V 32.4 21 A IDM 101 2.5 W/°C Single Pulse Avalanche Energy b EAS 596 mJ Maximum Power Dissipation PD 313 W TJ, Tstg -55 to +150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt d Soldering Recommendations (Peak temperature) c for 10 s dV/dt 70 16 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 6.5 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S15-2685-Rev. A, 16-Nov-15 Document Number: 91716 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG33N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.4 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current VDS VGS = 0 V, ID = 250 μA 650 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.84 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS VGS = ± 30 V - - ±1 VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 μA - 0.090 0.105 gfs VDS = 30 V, ID = 16.5 A - 11.5 - S Input Capacitance Ciss 4040 - Coss - 123 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1.0 MHz - Output Capacitance - 6 - Effective Output Capacitance, Energy Related a Co(er) - 121 - Effective Output Capacitance, Time Related b Co(tr) - 501 - - 115 173 - 29 - Drain-Source On-State Resistance Forward Transconductance a RDS(on) VGS = 10 V ID = 16.5 A Dynamic pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 49 - Turn-On Delay Time td(on) - 35 70 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 16.5 A, VDS = 520 V nC VDD = 520 V, ID = 16.5 A, VGS = 10 V, Rg = 9.1 - 67 100 - 103 155 - 60 90 f = 1 MHz, open drain 0.25 0.50 1.0 - - 32.4 S - - 101 TJ = 25 °C, IS = 16.5 A, VGS = 0 V - - 1.2 V - 605 - ns - 11 - μC - 28 - A ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = IS = 16.5 A, dI/dt = 100 A/μs, VR = 25 V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S15-2685-Rev. A, 16-Nov-15 Document Number: 91716 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG33N65E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 100 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 80 60 ID = 16.5 A TJ = 25 °C RDS(on), Drain-to-Source On-Resistance (Normalized) ID, Drain-to-Source Current (A) TOP 40 20 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) -60 -40 -20 20 Fig. 1 - Typical Output Characteristics, TC = 25 °C 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 100 000 60 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 40 VGS = 0 V, f = 1 MHz Ciss = Cgs + C gd, Cds shorted Crss = Cgd Coss = Cds + Cgd TJ = 150 °C 10 000 C, Capacitance (pF) ID, Drain-to-Source Current (A) 2.5 20 Ciss 1000 100 Coss 10 Crss 1 0.1 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 0 20 100 200 300 400 500 600 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 25 5000 TJ = 25 °C 20 60 TJ = 150 °C 15 Coss Eoss 500 10 40 Eoss (μJ) 80 Coss (pF) ID, Drain-to-Source Current (A) 100 5 20 VDS = 26.2 V 0 50 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-2685-Rev. A, 16-Nov-15 20 0 0 100 200 300 VDS 400 500 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 91716 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG33N65E www.vishay.com Vishay Siliconix VDS = 520 V VDS = 325 V VDS = 130 V 20 30 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 16 12 8 20 10 4 0 0 0 60 120 180 Qg, Total Gate Charge (nC) 25 240 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 875 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage (V) 1.4 1.6 Fig. 8 - Typical Source-Drain Diode Forward Voltage Operation in this Area Limited by RDS(on) ID, Drain Current (A) 100 850 825 800 775 750 725 700 675 ID = 250 μA 650 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage IDM Limited 10 100 μs Limited by RDS(on)* 1 ms 1 10 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse BVDSS Limited 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S15-2685-Rev. A, 16-Nov-15 Document Number: 91716 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG33N65E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Pulse Time (s) 0.1 1 Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case VGS VDS RD VDS tp VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS 90 % QG 10 V QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ 12 V 0.2 µF 0.3 µF D.U.T RG + - IAS + V DD D.U.T. - VDS VGS 10 V tp 0.01 Ω 3 mA IG ID Current sampling resistors Fig. 15 - Unclamped Inductive Test Circuit S15-2685-Rev. A, 16-Nov-15 Fig. 18 - Gate Charge Test Circuit Document Number: 91716 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG33N65E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91716. S15-2685-Rev. A, 16-Nov-15 Document Number: 91716 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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