scm1263mf ds en

500V / 600V High Voltage Three-phase Motor Driver ICs
SCM1200MF Series
Data sheet
Description
Package
The SCM1200MF series are high voltage three-phase
motor driver ICs in which transistors, pre-driver ICs
(MICs), and bootstrap circuits (diodes and resistors) are
highly integrated. These products can run on a
three-shunt current detection system and optimally
control the inverter systems of medium-capacity motors
that require universal input standards.
SCM (pin pitch: 1.27 mm, mold dimensions: 47 × 19 × 4.4 mm)
Features
Not to scale
● Each half-bridge circuit consists of a pre-driver IC
● In case of malfunction, all outputs shut down via three
FO pins connected together
● Built-in bootstrap diodes with current limmiting
resistors (22 Ω)
● CMOS compatible input (3.3 to 5 V)
● Pb free
● Isolation voltage: 2500 V for 1 min,
UL recognized component (File No.: E118037)
● Fault signal output at protection activation
● Protections include:
Undervoltage Lockout for power supply
High-side (UVLO_VB): Auto-restart
Low-side (UVLO_VCC): Auto-restart
Overcurrent Protection (OCP): Auto-restart
Simultaneous On-state Prevention: Auto-restart
Thermal Shutdown (TSD): Auto-restart
Typical Application Diagram
VCC
VFO
U1
1
3 LIN1
LIN1
4 COM1
HIN2
LS2 30
FO2
10 OCP2
11 LIN2
12 COM2
13 HIN2
14 VCC2
LIN2
Controller
VB1
8 HS1
9
Low noise
15 A
SCM1261MF*
SCM1242MF
SCM1263MF*
Low switching
SCM1243MF
dissipation
Low noise
SCM1265MF*
20 A
Low switching
SCM1245MF
dissipation
Low noise
SCM1256MF
30 A
Low switching
SCM1246MF
dissipation
* Uses a shorter blanking time for OCP activation.
For motor drives such as:
31
CBOOT1
Low noise
Part Number
U 32
6 VCC1
7
10 A
Feature
Applications
MIC1
5 HIN1
HIN1
IO (A)
LS1 33
FO1
2 OCP1
CFO
● IGBT+FRD (600 V)
SCM1200MF Series
RFO
INT
SCM1200MF Series
V
MIC2
29
M
●
●
●
●
●
Refrigerator compressor motor
Air conditioner compressor motor
Washing machine main motor
Fan motor
Pump motor
28
15
CBOOT2
VB2
16 HS2
17
LS3
FO3
27
18 OCP3
19 LIN3
LIN3
20 COM3
MIC3
W 26
21 HIN3
HIN3
22 VCC3
VDC
VBB
25
VB3
24 HS3
23
CBOOT3
A/D3
RO3
RO3
RO1
A/D2
A/D1
COM
CO1 CO2
CO3
RS3 RS2 RS1
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
1
SCM1200MF Series
CONTENTS
Description ------------------------------------------------------------------------------------------------------ 1
CONTENTS ---------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings ----------------------------------------------------------------------------- 4
2. Recommended Operating Conditions ----------------------------------------------------------------- 5
3. Electrical Characteristics -------------------------------------------------------------------------------- 6
3.1. Characteristics of Control Parts------------------------------------------------------------------ 6
3.2. Bootstrap Diode Characteristics ----------------------------------------------------------------- 7
3.3. Thermal Resistance Characteristics ------------------------------------------------------------- 7
3.4. Transistor Characteristics ------------------------------------------------------------------------- 8
3.4.1. SCM1261MF ----------------------------------------------------------------------------------- 8
3.4.2. SCM1242MF ----------------------------------------------------------------------------------- 9
3.4.3. SCM1263MF ----------------------------------------------------------------------------------- 9
3.4.4. SCM1243MF --------------------------------------------------------------------------------- 10
3.4.5. SCM1265MF --------------------------------------------------------------------------------- 10
3.4.6. SCM1245MF --------------------------------------------------------------------------------- 11
3.4.7. SCM1256MF --------------------------------------------------------------------------------- 11
3.4.8. SCM1246MF --------------------------------------------------------------------------------- 12
4. Mechanical Characteristics --------------------------------------------------------------------------- 13
5. Insulation Distance -------------------------------------------------------------------------------------- 13
6. Truth Table ----------------------------------------------------------------------------------------------- 14
7. Block Diagram ------------------------------------------------------------------------------------------- 15
8. Pin-out Diagram ----------------------------------------------------------------------------------------- 16
9. Typical Applications ------------------------------------------------------------------------------------ 17
10. External Dimensions ------------------------------------------------------------------------------------ 19
10.1. LF2552----------------------------------------------------------------------------------------------- 19
10.2. LF2557 (Long Lead Type) ----------------------------------------------------------------------- 20
10.3. LF2558 (Wide Lead-Forming Type) ----------------------------------------------------------- 21
10.4. Recommended PCB Hole Size ------------------------------------------------------------------ 22
11. Marking Diagram --------------------------------------------------------------------------------------- 22
12. Functional Descriptions -------------------------------------------------------------------------------- 23
12.1. Turning On and Off the IC ---------------------------------------------------------------------- 23
12.2. Pin Descriptions ----------------------------------------------------------------------------------- 23
12.2.1. U, V, and W----------------------------------------------------------------------------------- 23
12.2.2. VB1, VB2, and VB3 ------------------------------------------------------------------------- 23
12.2.3. HS1, HS2, and HS3 ------------------------------------------------------------------------- 24
12.2.4. VCC1, VCC2, and VCC3 ------------------------------------------------------------------ 24
12.2.5. COM1, COM2, and COM3---------------------------------------------------------------- 24
12.2.6. HIN1, HIN2, HIN3, LIN1, LIN2, and LIN3 -------------------------------------------- 25
12.2.7. VBB -------------------------------------------------------------------------------------------- 25
12.2.8. LS1, LS2, and LS3 -------------------------------------------------------------------------- 26
12.2.9. OCP1, OCP2, and OCP3------------------------------------------------------------------- 26
12.2.10. FO1, FO2, and FO3 ------------------------------------------------------------------------- 26
12.3. Protection Functions ------------------------------------------------------------------------------ 27
12.3.1. Fault Signal Output ------------------------------------------------------------------------- 27
12.3.2. Shutdown Signal Input --------------------------------------------------------------------- 27
12.3.3. Undervoltage Lockout for Power Supply (UVLO) ----------------------------------- 28
12.3.4. Overcurrent Protection (OCP) ----------------------------------------------------------- 28
12.3.5. Simultaneous On-state Prevention ------------------------------------------------------- 30
12.3.6. Thermal Shutdown (TSD) ----------------------------------------------------------------- 30
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
2
SCM1200MF Series
13. Design Notes ---------------------------------------------------------------------------------------------- 31
13.1. PCB Pattern Layout ------------------------------------------------------------------------------ 31
13.2. Heatsink Mounting Considerations ------------------------------------------------------------ 31
13.3. IC Characteristics Measurement Considerations ------------------------------------------- 31
14. Calculating Power Losses and Estimating Junction Temperatures --------------------------- 32
14.1. IGBT Steady-State Loss, PON ------------------------------------------------------------------- 32
14.2. GBT Switching Loss, PSW ------------------------------------------------------------------------ 33
14.3. Estimating Junction Temperature of IGBT -------------------------------------------------- 33
15. Typical Characteristics --------------------------------------------------------------------------------- 34
15.1. Transient Thermal Resistance Curves -------------------------------------------------------- 34
15.1.1. SCM1261MF --------------------------------------------------------------------------------- 34
15.1.2. SCM1242MF, SCM1263MF, SCM1243MF -------------------------------------------- 34
15.1.3. SCM1265MF, SCM1245MF -------------------------------------------------------------- 35
15.1.4. SCM1246MF, SCM1256MF -------------------------------------------------------------- 35
15.2. Performance Curves of Control Parts--------------------------------------------------------- 36
15.3. Performance Curves of Output Parts --------------------------------------------------------- 41
15.3.1. Output Transistor Performance Curves ------------------------------------------------ 41
15.3.2. Switching Loss ------------------------------------------------------------------------------- 43
15.4. Allowable Effective Current Curves ----------------------------------------------------------- 51
15.4.1. SCM1261MF --------------------------------------------------------------------------------- 51
15.4.2. SCM1242MF, SCM1263MF, SCM1243MF -------------------------------------------- 52
15.4.3. SCM1265MF, SCM1245MF -------------------------------------------------------------- 53
15.4.4. SCM1256MF, SCM1246MF -------------------------------------------------------------- 54
15.5. Short Circuit SOA (Safe Operating Area) --------------------------------------------------- 55
15.5.1. SCM1261MF --------------------------------------------------------------------------------- 55
15.5.2. SCM1242MF, SCM1263MF, SCM1243MF -------------------------------------------- 55
15.5.3. SCM1265MF, SCM1245MF -------------------------------------------------------------- 56
15.5.4. SCM1256MF, SCM1246MF -------------------------------------------------------------- 56
16. Pattern Layout Example ------------------------------------------------------------------------------- 57
17. Typical Motor Driver Application ------------------------------------------------------------------- 59
IMPORTANT NOTES ------------------------------------------------------------------------------------- 60
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
3
SCM1200MF Series
1.
Absolute Maximum Ratings
● Current polarities are defined as follows: a current flow going into the IC (sinking) is positive current (+); and a
current flow coming out of the IC (sourcing) is negative current (−).
● Unless specifically noted, TA = 25°C.
Characteristics
Symbol
Main Supply Voltage
(DC)
VDC
Main Supply Voltage
(Surge)
VDC(SURGE)
IGBT Breakdown
Voltage
VCES
VCC
Logic Supply Voltage
VBS
Output Current (DC)(1)
Output Current (Pulse)
IO
IOP
Conditions
VBB – LS1
VBB – LS2
VBB – LS3
VBB – LS1
VBB – LS2
VBB – LS3
VCC = 15 V, IC = 1 mA,
VIN = 0 V
VCC1– COM1
VCC2– COM2
VCC3– COM3
VB1 – HS1(U)
VB2– HS2(V)
VB3 – HS3(W)
TC = 25 °C
TC = 25 °C, PW ≤ 1ms
Rating
Unit
450
V
500
V
600
V
20
V
20
10
15
20
30
20
30
SCM1261MF
A
A
−0.5 to 7
V
−0.5 to 7
V
−10 to 5
V
TC(OP)
−30 to 125
°C
Tj
Tstg
150
−40 to 150
°C
°C
2500
V
Input Voltage
VIN
FO Pin Voltage
VFO
OCP Pin Voltage
VOCP
Operating Case
Temperature(2)
Junction Temperature(3)
Storage Temperature
Isolation Voltage(4)
VISO(RMS)
Between surface of
heatsink side and each
pin; AC, 60 Hz, 1 min
SCM1242MF/63MF/43MF
SCM1265MF/45MF
SCM1256MF/46MF
45
HIN1, LIN1– COM1
HIN2, LIN2– COM2
HIN3, LIN3– COM3
FO1– COM1
FO2– COM2
FO3– COM3
OCP1– COM1
OCP2– COM2
OCP3– COM3
Remarks
SCM1261MF
SCM1242MF/63MF/
43MF/65MF/45MF
SCM1256MF/46MF
(1)
Should be derated depending on an actual case temperature. See Section 15.4.
Refers to a case temperature measured during IC operation.
(3)
Refers to the junction temperature of each chip including its built-in controller ICs (MICs), transistors, and
freewheeling diodes.
(4)
Refers to voltage conditions to be applied between the case and all pins. All pins have to be shorted.
(2)
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
4
SCM1200MF Series
2.
Recommended Operating Conditions
Characteristics
Main Supply Voltage
Symbol
Conditions
Min.
Typ.
Max.
Unit
COM1 = COM2 = COM3
VBB – COM
VCC1– COM1
VCC2– COM2
VCC3– COM3
VB1 – HS1(U)
VB2– HS2(V)
VB3 – HS3(W)
－
300
400
V
13.5
－
16.5
V
13.5
－
16.5
V
VIN
0
－
5.5
V
tIN(MIN)ON
0.5
－
－
μs
tIN(MIN)OFF
0.5
－
－
μs
1.0
－
－
1.5
－
－
VDC
VCC
Logic Supply Voltage
VBS
Input Voltage
(HIN, LIN, FO)
Minimum Input Pulse
Width
Dead Time of Input
Signal
tDEAD
FO Pin Pull-up Resistor
RFO
1
－
22
kΩ
FO Pin Pull-up Voltage
FO Pin Capacitor for
Noise Reduction
Bootstrap Capacitor
VFO
3.0
－
5.5
V
CFO
0.001
－
0.01
μF
CBOOT
10
－
220
μF
IP ≤ 45 A
12
－
－
IP ≤ 30 A
18
－
－
IP ≤ 20 A
27
－
－
－
－
100
1000
－
2200
1000
－
10000
fc
－
－
20
kHz
TC(OP)
－
－
100
°C
Shunt Resistor
RS
RC Filter Resistor
RO
RC Filter Capacitor
CO
PWM Carrier Frequency
Case Temperature in
Operation
μs
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
mΩ
Remarks
SCM1243MF/
45MF/46MF
SCM1242MF/
56MF/61MF/65MF
SCM1256MF/46MF
SCM1242MF/43MF/
63MF/65MF/45MF
SCM1261MF
Ω
pF
SCM124xMF
SCM125xMF
SCM126xMF
5
SCM1200MF Series
3.
Electrical Characteristics
● Current polarities are defined as follows: a current flow going into the IC (sinking) is positive current (+); and a
current flow coming out of the IC (sourcing) is negative current (−).
● Unless specifically noted, TA = 25°C, VCC = 15 V.
3.1.
Characteristics of Control Parts
Characteristics
Symbol
Conditions
Min.
Typ.
Max.
Unit
10.5
11.5
12.5
V
10.5
11.5
12.5
V
10.0
11.0
12.0
V
10.0
11.0
12.0
V
－
3
－
mA
－
140
－
μA
VIH
1.5
2.0
2.5
V
VIL
1.0
1.5
2.0
V
Remarks
Power Supply Operation
VCC(ON)
Logic Operation Start Voltage
VBS(ON)
VCC(OFF)
Logic Operation Stop Voltage
VBS(OFF)
ICC
Logic Supply Current
IBS
Input Signal
High Level Input Signal
Threshold Voltage (HIN, LIN, FO)
Low Level Input Signal
Threshold Voltage (HIN, LIN, FO)
Input Current at High Level
(HIN, LIN)
Input Current at Low Level
(HIN, LIN)
Fault Signal Output
FO Pin Voltage in Fault Signal
Output
FO Pin Voltage in Normal
Operation
Protection
Overcurrent Protection Threshold
Voltage
Overcurrent Protection Hold
Time
Overcurrent Protection Blanking
Time
Thermal Shutdown Operating
Temperature*
Thermal Shutdown Releasing
Temperature*
VCC1– COM1
VCC2– COM2
VCC3– COM3
VB1 – HS1(U)
VB2– HS2(V)
VB3 – HS3(W)
VCC1– COM1
VCC2– COM2
VCC3– COM3
VB1 – HS1(U)
VB2– HS2(V)
VB3 – HS3(W)
VCC1 = VCC2 = VCC3,
COM1 = COM2 = COM3
VCC pin current in 3
phases operating
VB – HS = 15 V, HIN = 5 V,
VB pin current in single
phase operation
IIH
VIN = 5 V
－
230
500
μA
IIL
VIN = 0 V
－
－
2
μA
VFOL
VFO = 5 V, RFO = 10 kΩ
－
－
0.5
V
VFOH
VFO = 5 V, RFO = 10 kΩ
4.8
－
－
V
VTRIP
0.46
0.50
0.54
V
tP
20
26
－
μs
－
1.65
－
－
0.54
－
TDH
135
150
－
°C
TDL
105
120
－
°C
tBK
VTRIP = 1 V
μs
SCM124xMF
SCM125xMF
SCM126xMF
* Refers to the junction temperature of the built-in controller ICs (MICs).
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
6
SCM1200MF Series
3.2.
Bootstrap Diode Characteristics
Characteristics
Symbol
Bootstrap Diode Leakage Current
Bootstrap Diode Forward
Voltage
Bootstrap Diode Series Resistor
ILBD
VFB
3.3.
Conditions
Min.
Typ.
Max.
Unit
VR = 600 V
−
−
10
μA
IFB = 0.15 A
−
1.1
1.3
V
17.6
22.0
26.4
Ω
Min.
Typ.
Max.
Unit
－
－
3.7
－
－
3
－
－
4.5
－
－
4
RBOOT
Remarks
Thermal Resistance Characteristics
Characteristics
Symbol
R(j-c)Q
(2)
Conditions
1 element operation
(IGBT)
Junction-to-Case
Thermal Resistance(1)
R(j-c)F(3)
1 element operation
(Freewheeling diode)
Remarks
SCM1261MF
°C/W
SCM12/42MF
/63MF/43MF/65MF
/45MF/56MF/46MF
SCM1261MF
°C/W
SCM12/42MF
/63MF/43MF/65MF
/45MF/56MF/46MF
(1)
Refers to a case temperature at the measurement point described in Figure 3-1, below.
Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient
thermal characteristics, see Section 15.1.
(3)
Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.
(2)
24
1
15
33
Measurement point
Figure 3-1.
Case temperature measurement point
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
7
SCM1200MF Series
3.4.
Transistor Characteristics
IN
trr
toｆｆ
ton
td(oｆｆ)
td(on)
tｆ
tr
90%
VDS
90%
10%
ID
10%
Figure 3-2.
Switching time definition
3.4.1. SCM1261MF
Characteristics
Symbol
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Emitter-to-Collector Diode Forward
Voltage
ICES
High-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Conditions
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
−
−
1
mA
VCE(SAT)
IC = 10 A, VIN = 5 V
－
1.7
2.2
V
VF
IF = 10 A,VIN = 0 V
－
1.7
2.2
V
−
85
−
ns
−
700
−
ns
−
100
−
ns
−
1070
−
ns
trr
td(on)
tr
td(off)
VDC = 300 V, IC = 10 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
Fall Time
tf
−
90
−
ns
Low-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
trr
−
105
−
ns
−
710
−
ns
−
120
−
ns
−
1010
−
ns
−
95
−
ns
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDC = 300 V, IC = 10 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
tf
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
8
SCM1200MF Series
3.4.2. SCM1242MF
Characteristics
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Emitter-to-Collector Diode Forward
Voltage
High-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
Rise Time
Symbol
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
−
−
1
mA
VCE(SAT)
IC = 15 A, VIN = 5 V
－
1.7
2.2
V
VF
IF = 15 A,VIN = 0 V
－
1.75
2.2
V
−
80
−
ns
−
700
−
ns
−
100
−
ns
−
1300
−
ns
ICES
trr
td(on)
tr
Turn-Off Delay Time
Conditions
td(off)
VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
Fall Time
tf
−
90
−
ns
Low-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
trr
−
90
−
ns
−
700
−
ns
−
130
−
ns
−
1230
−
ns
−
90
−
ns
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
−
−
1
mA
VCE(SAT)
IC = 15 A, VIN = 5 V
－
1.7
2.2
V
VF
IF = 15 A,VIN = 0 V
－
1.75
2.2
V
−
80
−
ns
−
700
−
ns
−
100
−
ns
−
1300
−
ns
Rise Time
td(on)
tr
Turn-Off Delay Time
Fall Time
td(off)
VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
tf
3.4.3. SCM1263MF
Characteristics
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Emitter-to-Collector Diode Forward
Voltage
High-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Symbol
ICES
Conditions
trr
td(on)
tr
td(off)
VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
Fall Time
tf
−
90
−
ns
Low-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
trr
−
90
−
ns
−
700
−
ns
−
130
−
ns
−
1230
−
ns
−
90
−
ns
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
tf
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
9
SCM1200MF Series
3.4.4. SCM1243MF
Characteristics
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Emitter-to-Collector Diode Forward
Voltage
High-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
Rise Time
Symbol
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
−
−
1
mA
VCE(SAT)
IC = 15 A, VIN = 5 V
－
1.7
2.2
V
VF
IF = 15 A,VIN = 0 V
－
1.75
2.2
V
−
70
−
ns
−
600
−
ns
−
70
−
ns
−
620
−
ns
ICES
trr
td(on)
tr
Turn-Off Delay Time
Conditions
td(off)
VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
Fall Time
tf
−
60
−
ns
Low-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
trr
−
80
−
ns
−
600
−
ns
−
100
−
ns
−
600
−
ns
−
70
−
ns
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
−
−
1
mA
VCE(SAT)
IC = 20 A, VIN = 5 V
－
1.7
2.2
V
VF
IF = 20 A,VIN = 0 V
－
1.9
2.4
V
−
80
−
ns
−
780
−
ns
−
120
−
ns
−
1150
−
ns
Rise Time
td(on)
tr
Turn-Off Delay Time
Fall Time
td(off)
VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
tf
3.4.5. SCM1265MF
Characteristics
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Emitter-to-Collector Diode Forward
Voltage
High-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Symbol
ICES
Conditions
trr
td(on)
tr
td(off)
VDC = 300 V, IC = 20 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
Fall Time
tf
−
90
−
ns
Low-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
trr
−
85
−
ns
−
810
−
ns
−
170
−
ns
−
1100
−
ns
−
90
−
ns
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDC = 300 V, IC = 20 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
tf
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
3.4.6. SCM1245MF
Characteristics
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Emitter-to-Collector Diode Forward
Voltage
High-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
Rise Time
Symbol
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
−
−
1
mA
VCE(SAT)
IC = 20 A, VIN = 5 V
－
1.7
2.2
V
VF
IF = 20 A,VIN = 0 V
－
1.9
2.4
V
−
75
−
ns
−
695
−
ns
−
95
−
ns
−
675
−
ns
ICES
trr
td(on)
tr
Turn-Off Delay Time
Conditions
td(off)
VDC = 300 V, IC = 20 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
Fall Time
tf
−
55
−
ns
Low-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
trr
−
115
−
ns
−
715
−
ns
−
135
−
ns
−
670
−
ns
−
50
−
ns
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
−
−
1
mA
VCE(SAT)
IC = 30 A, VIN = 5 V
－
1.7
2.2
V
VF
IF = 30 A,VIN = 0 V
－
1.9
2.4
V
−
70
−
ns
−
760
−
ns
−
130
−
ns
−
1260
−
ns
Rise Time
td(on)
tr
Turn-Off Delay Time
Fall Time
td(off)
VDC = 300 V, IC = 20 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
tf
3.4.7. SCM1256MF
Characteristics
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Emitter-to-Collector Diode Forward
Voltage
High-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Symbol
ICES
Conditions
trr
td(on)
tr
td(off)
VDC = 300 V, IC = 30 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
Fall Time
tf
−
90
−
ns
Low-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
trr
−
80
−
ns
−
770
−
ns
−
160
−
ns
−
1200
−
ns
−
90
−
ns
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDC = 300 V, IC = 30 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
tf
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
3.4.8. SCM1246MF
Characteristics
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Emitter-to-Collector Diode Forward
Voltage
High-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Symbol
Min.
Typ.
Max.
Unit
VCE = 600 V, VIN = 0 V
−
−
1
mA
VCE(SAT)
IC = 30 A, VIN = 5 V
－
1.7
2.2
V
VF
IF = 30 A,VIN = 0 V
－
1.9
2.4
V
−
60
−
ns
−
660
−
ns
−
110
−
ns
−
700
−
ns
ICES
Conditions
trr
td(on)
tr
td(off)
VDC = 300 V, IC = 30 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
Fall Time
tf
−
50
−
ns
Low-side Switching
Emitter-to-Collector Diode Reverse
Recovery Time
Turn-On Delay Time
trr
−
70
−
ns
−
660
−
ns
−
150
−
ns
−
690
−
ns
−
50
−
ns
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDC = 300 V, IC = 30 A,
inductive load,
VIN = 0→5 V or 5→0 V,
Tj = 25°C
tf
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
4.
Mechanical Characteristics
Characteristics
Conditions
Min.
Typ.
Max.
Unit
Remarks
Heatsink Mounting
See footnote below.*
0.588
0.784
N∙m
－
Screw Torque
Flatness of Heatsink
See Figure 4-1.
0
200
μm
－
Attachment Area
Package Weight
11.8
g
－
－
* When mounting a heatsink, it is recommended to use a metric screw of M3 and a plain washer of 7 mm (φ) together at
each end of it. See Section 13.2 for more details about screw tightening.
Heatsink
Measurement position
-+
+
Heatsink
Figure 4-1.
5.
Flatness measurement position
Insulation Distance
Characteristics
Clearance
Conditions
Min.
Typ.
Max.
Unit
Between heatsink* and
leads. See Figure 5-1.
2.0
－
2.5
mm
Remarks
Creepage
3.86
4.26
mm
－
* Refers to when a heatsink to be mounted is flat. If your application requires a clearance exceeding the maximum
distance given above, use an alternative (e.g., a convex heatsink) that will meet the target requirement.
Creepage
Clearance
Heatsink
Figure 5-1.
Insulation distance definition
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
6.
Truth Table
Table 6-1 is a truth table that provides the logic level definitions of operation modes.
In the case where HIN and LIN signals in each phase are high at the same time, the simultaneous on-state prevention
function sets both the high-side and low-side transistors off.
After recovering from a UVLO_VCC condition, the high-side and low-side transistors resume switching according to
the input logic levels of the next HIN and LIN signals (level-triggered).
After recovering from a UVLO_VB condition, the high-side transistors resume switching at the next rising edge of an
HIN signal (edge-triggered).
Table 6-1. Truth table for operation modes
Mode
Normal Operation
External Shutdown Signal Input
FO = L
High-side Undervoltage Lockout
for Power Supply (UVLO_VB)
Low-side Undervoltage Lockout
for Power Supply (UVLO_VCC)
Overcurrent Protection (OCP)
Thermal Shutdown (TSD)
HIN
LIN
High-side Transistors
Low-side Transistors
L
L
OFF
OFF
H
L
ON
OFF
L
H
OFF
ON
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
OFF
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
ON
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
OFF
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
OFF
H
H
OFF
OFF
L
L
OFF
OFF
H
L
OFF
OFF
L
H
OFF
OFF
H
H
OFF
OFF
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
7.
Block Diagram
MIC1
1
UVLO_VCC
FO1
2 OCP1
3 LIN1
4 COM1
5 HIN1
6 VCC1
LS1 33
UVLO_VB
Level shift
Drive
circuit
HO1
Input logic
Simultaneous
on state
prevention
U 32
TSD
Drive
circuit
OCP
LO1
31
VB1
8 HS1
7
MIC2
UVLO_VCC
FO2
9
OCP2
Level shift
10
11 LIN2
12 COM2
13 HIN2
14 VCC2
LS2 30
UVLO_VB
Drive
circuit
HO2
Input logic
Simultaneous
on state
prevention
V
29
TSD
Drive
circuit
OCP
LO2
28
VB2
16 HS2
15
MIC3
17
UVLO_VCC
FO3
18 OCP3
19 LIN3
20 COM3
21 HIN3
22 VCC3
LS3
UVLO_VB
Level shift
Drive
circuit
HO3
Input logic
Simultaneous
on state
prevention
W
TSD
OCP
Drive
circuit
27
26
LO3
VBB
25
VB3
24 HS3
23
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
8.
Pin-out Diagram
Top view
1
24
1
33
24
25
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
25
Pin Name
FO1
OCP1
LIN1
COM1
HIN1
VCC1
VB1
HS1
FO2
OCP2
LIN2
COM2
HIN2
VCC2
VB2
HS2
FO3
OCP3
LIN3
COM3
HIN3
VCC3
VB3
HS3
VBB
W
LS3
VBB
V
LS2
VBB
U
LS1
33
Functions
U-phase fault output and shutdown signal input
Input for U-phase Overcurrent Protection
Logic input for U-phase low-side gate driver
U-phase logic ground
Logic input for U-phase high-side gate driver
U-phase logic supply voltage input
U-phase high-side floating supply voltage input
U-phase high-side floating supply ground
V-phase fault output and shutdown signal input
Input for V-phase Overcurrent Protection
Logic input for V-phase low-side gate driver
V-phase logic ground
Logic input for V-phase high-side gate driver
V-phase logic supply voltage input
V-phase high-side floating supply voltage input
V-phase high-side floating supply ground
W-phase fault output and shutdown signal input
Input for W-phase Overcurrent Protection
Logic input for W-phase low-side gate driver
W-phase logic ground
Logic input for W-phase high-side gate driver
W-phase logic supply voltage input
W-phase high-side floating supply voltage input
W-phase high-side floating supply ground
Positive DC bus supply voltage
W-phase output
W-phase IGBT emitter
(Pin trimmed) positive DC bus supply voltage
V-phase output
V-phase IGBT emitter
(Pin trimmed) positive DC bus supply voltage
U-phase output
U-phase IGBT emitter
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
9.
Typical Applications
CR filters and Zener diodes should be added to your application as needed, so that you can: protect each pin against
surge voltages causing malfunctions; and avoid the IC being used under the conditions exceeding the absolute
maximum ratings, resulting in critical damage to itself. Then test all the pins thoroughly under actual operating
conditions to ensure that your application works flawlessly.
VCC
VFO
SCM1200MF Series
U1
RFO
INT
LS1
1
CFO
33
FO1
2 OCP1
3 LIN1
LIN1
4 COM1
CLIN1
MIC1
U 32
5 HIN1
6 VCC1
HIN1
CHIN1
DZ
CVCC1
VB1
8 HS1
7
CBOOT1
31
DBOOT1 RBOOT1
CP1
9
LS230
FO2
10 OCP2
11 LIN2
LIN2
12 COM2
CLIN2
HIN2
Controller
V
MIC2
29
M
13 HIN2
14 VCC2
CHIN2
CVCC2
VB2
16 HS2
15
CBOOT2
28
DBOOT2 RBOOT2
LS3
CP2
17
27
FO3
18 OCP3
19 LIN3
LIN3
20 COM3
CLIN3
MIC3
W26
21 HIN3
HIN3
22 VCC3
CHIN3
CVCC3
25
VB3
24 HS3
23
CBOOT3
VDC
VBB
DBOOT3 RBOOT3
CP3
RO3
A/D3
A/D2
CS
RO2
CDC
RO1
A/D1
CO1
CO2
CO3
COM
DRS3 DRS2
Figure 9-1.
DRS1
RS3 RS2 RS1
Typical application using three shunt resistors
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
VCC
VFO
SCM1200MF Series
U1
RFO
INT
LS1
1
CFO
33
FO1
2 OCP1
3 LIN1
LIN1
4 COM1
CLIN1
MIC1
U 32
5 HIN1
6 VCC1
HIN1
CHIN1
DZ
CVCC1
VB1
8 HS1
7
CBOOT1
CP1
9
31
DBOOT1 RBOOT1
LS230
FO2
10 OCP2
11 LIN2
LIN2
12 COM2
CLIN2
V
MIC2
29
M
13 HIN2
Controller
HIN2
14 VCC2
CHIN2
CVCC2
VB2
16 HS2
15
CBOOT2
LS3
CP2
17
28
DBOOT2 RBOOT2
27
FO3
18 OCP3
19 LIN3
LIN3
20 COM3
CLIN3
MIC3
W26
21 HIN3
22 VCC3
HIN3
CHIN3
CVCC3
25
VB3
24 HS3
23
CBOOT3
VDC
VBB
DBOOT3 RBOOT3
CP3
CS
RO
CDC
A/D
CO
COM
DRS
Figure 9-2.
RS
Typical application using shingle shunt resistor
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
10. External Dimensions
10.1. LF2552
0.5
C
0.5
C
(2.6)
8xP5.1=40.8
4.4 ±0.3
1.2 ±0.2
47±0.3
2
A
+0.5
0
MAX1.2
（Measured at base of pins）
(5ﾟ)
φ 3.2± 0.15
15.95± 0.5
11.45± 0.5
19± 0.3
12.25± 0.5
17.25± 0.5
A
(5ﾟ)
B
43.3±0.3
B
2.08±0.2
11.2±0.5
5xP1.27=6.35
3.7
D
2
+0.2
-0.1
+0.2
-0.1
0.7 -0.1
A-A
0.5
+0.2
-0.1
+0.2
0.5
(11.6)
+0.2
-0.1
B-B
C-C
(38.6)
0.6
0.5
D
-0.1
3.7
1.27
+0.2
-0.1
3.7
3.24
(2.6)
1.27
1.27
0.5
2.57
5xP1.27=6.35
+0.2
5xP1.27=6.35
1.2
+0.2
-0.1
D-D
Unit: mm
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
10.2. LF2557 (Long Lead Type)
(0.65)
0.6
(2.6)
C
0.6
C
8xP5.1=40.8
4.4 ±0.3
1.2 ±0.2
+0.2
2 0
A
（Measured at base of pins ）
MAX1.2
47 ±0.3
)
( 11°
0～ 0.5
Φ 3.2± 0.15
15.95± 0.6
11.45± 0.6
19± 0.3
12.25± 0.6
17.25± 0.6
A
B
2.08 ±0.2
5xP1.27=6.35
5xP1.27=6.35
2.57
1.27
3.7
1.27
3.7
3.24
5xP1.27=6.35
(12°)
B
0～ 0.5
43.3 ±0.3
14 ～14.8
1.27
3.7
D
2
0.5
+0.2
D
0.5 -0.1
(2.6)
+0.2
-0.1
+0.2
+0.2
-0.1
B-B
+0.2
+0.2
0.5 -0.1
(11.5)
+0.2
0.7 -0.1
A-A
0.5 -0.1
C-C
(38.5)
0.6 -0.1
1.2
+0.2
-0.1
D-D
Unit: mm
SCM1200MF-DSJ Rev.1.1
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20
SCM1200MF Series
10.3. LF2558 (Wide Lead-Forming Type)
0.5
C
0.5
C
8xP5.1=40.8
4.4 ±0.3
1.2 ±0.2
+0.5
47 ±0.3
2 0
A
MAX1.2
(5 °)
（Measured at base of pins ）
(2°)
Φ 3.2± 0.15
15.95± 0.5
11.45± 0.5
19
(13.6)
± 0.3
14.75± 0.5
17.25± 0.5
A
(1)
B
(5 °)
43.3 ±0.3
B
2.08 ±0.2
11.2 ±0.5
5xP1.27=6.35
3.7
+0.2
+0.2
3.7
1.27
D
D
+0.2
3.7
3.24
(2.6)
1.27
1.27
0.5 -0.1
2.57
5xP1.27=6.35
0.5 -0.1
5xP1.27=6.35
2
+0.2
-0.1
0.6 -0.1
B-B
+0.2
+0.2
0.5 -0.1
(11.6)
(38.6)
0.5 -0.1
C-C
0.7
+0.2
-0.1
A-A
1.2
+0.2
-0.1
D-D
Unit: mm
SCM1200MF-DSJ Rev.1.1
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21
SCM1200MF Series
10.4. Recommended PCB Hole Size
φ1.1
φ1.4
1 pin ~ 24 pin
25 pin ~ 33 pin
11. Marking Diagram
25
33
Branding Area
24
1
25
33
JAPAN
24
SCM124×MF
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N or D)
DD is the day of the month (01 to 31)
YMDDX
1
X is the control number
Part Number
SCM1200MF-DSJ Rev.1.1
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SCM1200MF Series
12. Functional Descriptions
All the characteristic values given in this section are
typical values, unless they are specified as minimum or
maximum.
For pin descriptions, this section employs a notation
system that denotes a pin name with the arbitrary letter
“x”, depending on context. The U, V, and W phases are
represented as the pin numbers 1, 2, and 3, respectively.
Thus, “(the) VBx pin” is used when referring to either of
the VB1, VB2, or VB3 pin. Also, when different pin
names are mentioned as a pair (e.g., “the VBx and HSx
pins”), they are meant to be the pins in the same phase.
12.1. Turning On and Off the IC
The procedures listed below provide recommended
startup and shutdown sequences.
To turn on the IC properly, do not apply any voltage
on the VBB, HINx, and LINx pins until the logic power
supply, VCC, has reached a stable state (VCC(ON) ≥ 12.5
V). It is required to charge bootstrap capacitors, CBOOT,
up to full capacity at startup (see Section 12.2.2).
To turn off the IC, set the HINx and LINx pins to
logic low (or “L”), and then decrease the VCCx pin
voltage.
12.2. Pin Descriptions
(1)
(2)
In Formula (1), let TL(OFF) be the maximum off-time
of the low-side transistor, measured in seconds, with the
charging time of CBOOT excluded.
Even during the high-side transistor is not on, voltage
on the bootstrap capacitor keeps decreasing due to
power dissipation in the IC. When the VBx pin voltage
decreases to VBS(OFF) or less, the high-side undervoltage
lockout (UVLO_VB) starts operating (see Section
12.3.3.1). Therefore, actual board testing should be done
thoroughly to validate that voltage across the VBx pin
maintains over 12.0 V (VBS > VBS(OFF)) during a
low-frequency operation such as a startup period.
As shown in Figure 12-1, in each phase, a bootstrap
diode, DBOOT, and a current-limiting resistor, RBOOT, are
placed in series between the VCCx and the VBx pins.
The charging time of CBOOT, tC, is given by Formula
(3):
(3)
where CBOOT is the optimized capacitance of the
bootstrap capacitor, and RBOOT is the resistance of the
current-limiting resistor (22 Ω ± 20 %).
U1
12.2.1. U, V, and W
These pins are the outputs of the three phases, and
serve as connection terminals to the three-phase motor.
The U, V, and W pins are internally connected to the
HS1, HS2, and HS3 pins, respectively.
VB1
7
CP
CBOOT1
8
31
VCC
VBB
HO
6
VCC1
4
MIC1
U
COM1
12.2.2. VB1, VB2, and VB3
These are the inputs of the high-side floating power
supplies for the individual phases.
Voltages across the VBx and HSx pins should be
maintained within the recommended range (i.e., the
Logic Supply Voltage, VBS) given in Section 2.
In each phase, a bootstrap capacitor, CBOOT, should be
connected between the VBx and HSx pins.
For proper startup, turn on the low-side transistor first,
then charge the bootstrap capacitor, CBOOT, up to its
maximum capacity.
Satisfying the formulas below can provide optimal
capacitance for the bootstrap capacitors, CBOOT. Note
that whichever resulting value is larger should be chosen
in order to deal with capacitance tolerance and DC bias
characteristics.
HS1
DBOOT1 RBOOT1
32
Mortor
LO
CDC VDC
LS1
Figure 12-1.
33
RS1
Bootstrap circuit
Figure 12-2 shows an internal level-shifting circuit
that produces high-side output signals, HOx. A high-side
output signal, HOx, begins to respond when an input
signal, HINx, transits from low to high (rising edge) or
high to low (falling edge). And a signal triggered on a
rising edge is called “Set”, whereas a signal triggered on
a falling edge is called “Reset”. Either of these two
signals, Set or Reset, is then transmitted to the high-side
by the level-shifting circuit. Finally, the SR flip-flop
circuit feeds an output signal, Q (i.e., HOx).
Figure 12-3 is a timing diagram describing how noise
or other detrimental effects will improperly influence the
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SCM1200MF Series
level-shifting process. When a sharp voltage drop, which
is affected by noise, between the VBx and HSx pins
(also denoted as “VBx–HSx” in the tables in previous
sections), occurs after the Set signal generation, the next
Reset signal cannot be sent to the SR flip-flop circuit.
And the state of the high-side output, HOx, stays logic
high (or “H”) because the SR flip-flop does not respond.
With the HOx state being held high, the next LINx
signal can still turn on the low-side transistor and cause
a simultaneously-on condition which may result in
critical damage to the IC.
To protect the VBx pin against such noise effect, add
a bootstrap capacitor, CBOOT, in each phase. CBOOT
should be placed near the IC and connected between the
VBx and HSx pins with a minimal length of traces. To
use an electrolytic capacitor, add a 0.01 µF to 0.1 µF
bypass capacitor, CP, in parallel near other functional
pins used for the same phase.
U1
VBx
S
Input
logic
HINx
Set
Pulse
generator Reset
Q
HOx
R
HSx
COMx
Figure 12-2.
Internal level-shifting circuit
HINx
12.2.4. VCC1, VCC2, and VCC3
These are the logic supply pins for the built-in
pre-driver ICs. The VCC1, VCC2, and VCC3 pins must
be externally connected on a PCB because they are not
internally connected. To prevent malfunction induced by
supply ripples or other factors, put a 0.01 µF to 0.1 μF
ceramic capacitor, CVCC, near other functional pins used
for the same phase. To prevent damage caused by surge
voltages, put a 18 V to 20 V Zener diode, DZ, between
the VCCx and COMx pins.
Voltages to be applied between the VCCx and COMx
pins should be regulated within the recommended
operational range of VCC, given in Section 2.
12.2.5. COM1, COM2, and COM3
These are the logic ground pins for the built-in
pre-driver ICs. For proper control, each of them must be
connected to the corresponding ground pin. The COM1,
COM2, and COM3 pins should be connected externally
on a PCB because they are not internally connected.
Varying electric potential of ground can be a cause of
improper operations; therefore, each connection point of
these pins should be as close to the LSx pin as possible
but separated from the power ground. Moreover,
extreme care should be taken when wiring so that
currents from the power ground do not affect the COMx
pin. To reduce noise effects, connect these pins closely
to shunt resistors, RS, at a single-point ground (or, a star
ground) with traces of a minimal length (see Figure
12-4).
U1
VDC
VBB 25
0
CS
Set
4 COM1
CDC
0
12 COM2
Reset
0
20 COM3
VBx-HSx
VUVHL
LS1 33
LS2 30
LS3 27
VUVHH
RS1
RS2
RS3
0
Q
0
Figure 12-3
Waveforms at VBx–HSx voltage drop
Connect COM1,
COM2, and COM3
on a PCB.
OCP3
OCP2
Create a single-point ground
(a star ground) near shunt
resistors, but keep it separate
from the power ground.
OCP1
Figure 12-4.
Connections to ground pin
12.2.3. HS1, HS2, and HS3
These pins are the grounds of the high-side floating
supplies for each phase, and are connected to negative
nodes of the bootstrap capacitors, CBOOT.
The HS1, HS2, and HS3 pins are internally connected
to the U, V, and W pins, respectively.
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SCM1200MF Series
12.2.6. HIN1, HIN2, HIN3,
LIN1, LIN2, and LIN3
U1
These are the input pins of the internal motor drivers
for each phase. The HINx pin acts as a high-side
controller, whereas the LINx pin acts as a low-side
controller.
Figure 12-5 shows an internal circuit diagram of the
HINx or LINx pin.
This is a CMOS Schmitt trigger circuit with 22 kΩ
pull-down resistor and input logic is active high.
Input signals through the HINx–COMx and the
LINx–COMx pins in each phase should be set within the
ranges provided in Table 12-1, below. Note that dead
time setting must be done because the IC does not have
a dead time generator.
The higher PWM carrier frequency rises, the more
switching loss increases. Hence, the PWM carrier
frequency must be set so that operational case
temperatures and junction temperatures can have
sufficient margins in the absolute maximum ranges
specified in Section 1.
If the signals from the microcontroller become
unstable, the IC may result in malfunctions. To avoid
this event, control the outputs from the microcontroller
output line should not be high impedance.
Also, if the traces between the microcontroller and
both the HINx and LINx pins are too long, the traces
may be interfered by noise. Therefore, it is
recommended to add an additional filter or a pull-down
resistor near the the HINx or LINx pin as needed. (See
Figure 12-6.
Here are filter circuit constants for reference:
RIN1: 33 Ω to 100 Ω
RIN2: 1 kΩ to 10 kΩ
CIN: 100 pF to 1000 pF
Extra attention should be paid when adding RIN1 and
RIN2 to the traces. When they are connected each other,
the input voltage of the HINx and LINx pins becomes
slightly lower than the output voltage of the
microcontroller.
5V
2kΩ
HINx
(LINx)
22kΩ
COMx
Figure 12-5.
Internal circuit diagram of HINx or LINx
pin
U1
Input
signal
RIN1
HINx
(LINx)
RIN2
Controller
Figure 12-6.
CIN
SCM1200MF
Filter circuit for HINx or LINx pin
12.2.7. VBB
This is the input pin for the main supply voltage, i.e.,
the positive DC bus. All of the IGBT collectors of the
high-side are connected to this terminal.
Voltages between the VBB and COMx pins should be
set within the recommended range of the main supply
voltage, VDC, given in Section 2.
To absorb surge voltages, put a 0.01 μF to 0.1 μF
snubber capacitor, CS, near the VBB pin and an
electrolytic capacitor, CDC, with a minimal length of
PCB traces to the VBB pin.
Table 12-1. Input signals for HINx and LINx pins
Parameter
“H” Level Signal
“L” Level Signal
Input Voltage
Input Pulse
Width
PWM Carrier
Frequency
3 V<VIN< 5.5 V
0 V <VIN< 0.5 V
≥ 0.5 μs
≥ 0.5 μs
Dead Time
≤ 20kHz
≥ 1.0 μs
≥ 1.5 μs (SCM1242MF、SCM1250M)
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SCM1200MF Series
12.2.8. LS1, LS2, and LS3
These are emitter pins of the low-side IGBTs. The
LS1, LS2, and LS3 pins are connected to the shunt
resistors, RS.
When connecting shunt resistors to these pins, such as
for current detection, trace lengths from the shunt
resistors to the IC should be as short as practicable.
Otherwise, malfunctioning may occur because a longer
circuit trace increases its inductance and thus increases
its susceptibility to improper operations.
For applications where long PCB traces are required,
add a fast recovery diode, DRS, between the LSx and
COMx pins in order to prevent the IC from
malfunctioning.
U1
VBB 25
VDC
CS
DRS1
4 COM1
12 COM2
LS1 33
LS2 30
20 COM3
RS1
CDC
DRS2
RS2
DRS3
RS3
LS3 27
Add a Fast recovery diode
to a long trace.
resistor, RFO, has a too small resistance value, the FOx
pin voltage at fault signal output becomes high due to
the on-resistance of a built-in MOSFET, QFO (Figure
12-8). Therefore, it is recommended to use a 1 kΩ to 22
kΩ pull-up resistor when the low-level input threshold
voltage of a microcontroller, VIL, is set to 1.0 V.
To suppress noise, add a filter capacitor, CFO, near the
IC with minimizing a trace length between the FOx and
COMx pins. Note that, however, this additional filtering
allows a delay time, tD(FO), to occur, as shown in Figure
12-9. The delay time, tD(FO), is a period of time which
starts when the IC receives a fault flag turning on the
internal MOSFET, QFO, and continues until when the
FOx pin reaches its threshold voltage (VIL) of 1.0 V or
below (put simply, until the time when the IC detects a
logic low state, “L”).
Figure 12-11 shows how the delay time, tD(FO), and the
noise filter capacitor, CFO, are related.
To avoid the repetition of Overcurrent Protection
(OCP) activations, the external microcontroller must
shut off any input signals to the IC within an OCP hold
time, tP, which occurs after the MOSFET (QFO) turn-on.
tP is 15 μs where minimum values of temperature
characteristics are taken into account. (For more details,
see Section 12.3.4.)
When VIL is set to 1.0 V, it is recommended to use a
0.001 μF to 0.01 μF noise filter capacitor, CFO, allowing
a sufficient margin to deal with variations in
characteristics.
Put a shunt resistor near
the IC with a minimum
length to the LSx pin.
VFO
U1
5V
RFO
Figure 12-7.
2kΩ
FOx
Connections to LS pin
1MΩ
3.0µs(typ.)
Blanking
filter
INT
50Ω
12.2.9. OCP1, OCP2, and OCP3
These pins serve as the inputs of the Overcurrent
Protection (OCP) for the currents go through output
transistors.
Section 12.3.4 provides further information about the
OCP circuit configuration and its mechanism.
12.2.10. FO1, FO2, and FO3
These pins operate as fault signal outputs and
shutdown signal inputs for each of the three phases.
Sections 12.3.1 and 12.3.2 explain these two functions
in detail, respectively.
Figure 12-8 illustrates a schematic diagram of the
FOx pin and its peripheral circuit. Because of its
open-drain nature, each of the FOx pins should be tied
by a pull-up resistor, RFO, to external power supply
voltage, VFO. The external power supply voltage, VFO,
should range from 3.0 V to 5.5 V.
Figure 12-10 shows a relation between the FOx pin
voltage and a pull-up resistance value. When a pull-up
Output SW turn-off
and QFO turn-on
CFO
QFO
COMx
Figure 12-8.
Internal circuit diagram of FOx pin and
its peripheral circuit
QFO
FOx pin
voltage
0
Figure 12-9.
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ON
tD(FO)
VIL
FOx pin delay time, tD(OFF)
26
Fault signal voltage (V)
SCM1200MF Series
Tj = 25°C
0.5
12.3.1. Fault Signal Output
Max.
0.4 Typ.
In case one or more of the following protections are
actuated, internal MOSFET, QFO, turns on and the FOx
pin becomes to logic low (≤ 0.5 V).
Min.
0.3
1)
2)
3)
4)
0.2
0.1
0
0
2
4
6
8
10
RFO (kΩ)
Figure 12-10.
Fault signal voltage vs. pull-up resistor
value, RFO
Tj = 25°C
Max.
Delay Time, tD(FO) (µs)
15
Low-side undervoltage lockout (UVLO_VCC)
Overcurrent protection (OCP)
Simultaneous on-state prevention
Thermal shutdown (TSD)
During the time when the FOx pin holds the logic low
state, the high- and low-side transistors of each phase
turn off. In normal operation, the FOx pin holds an “H”
state and outputs a 5 V signal.
The fault signal output time of the FOx pin at OCP
activation is OCP hold time (tP) of 26 μs (typ.), fixed by
a built-in feature of the IC itself (see Section 12.3.4).
The fault signals are then sent to an interrupt pin (INT)
of the external microcontroller, and should be processed
as an interrupt task to be done within the predetermined
OCP hold time, tP.
10
Typ.
5
0
0.000
Min.
0.005
0.010
0.015
0.020
0.025
CFO (µF)
Figure 12-11.
Delay time, tD(FO) vs. filter capacitor,
CFO
12.3.2. Shutdown Signal Input
The FO1, FO2, and FO3 pins also can be the input
pins of shutdown signals. When the FOx pin becomes
logic low, the high- and low-side transistors of each
phase turn off.
The voltages and pulse widths of the shutdown signals
to be applied between the FOx and COMx pins are listed
in Table 12-2.
Table 12-2. Shutdown signals
12.3. Protection Functions
This section describes the various protection circuits
provided in the SCM1200MF series.
The protection circuits include: the undervoltage
lockout for power supply (UVLO), the simultaneous
on-state prevention function, the overcurrent protection
(OCP), and the thermal shutdown (TSD).
In case one or more of these protection circuits are
activated, the FO pin outputs a fault signal and the
external microcontroller stops all operations of the three
phases. The external microcontroller can also shut down
the IC operations by inputting a fault signal to the FOx
pin.
In the following function descriptions, “HOx” denotes
a gate input signal on the high-side transistor; whereas
“LOx” denotes a gate input signal on the low-side
transistor (See also the diagrams in Section 7.).
“VBx–HSx” refers to the voltages between the VBx pin
and HSx pin.
Parameter
Input
Voltage
Input
Pulse
Width
“H” Level Signal
“L” Level Signal
3 V < VIN< 5.5 V
0 V < VIN < 0.5 V
≥ 0.5 μs
≥ 0.5 μs
In Figure 12-12, FO1, FO2 and FO3 are all connected.
If an abnormal condition is detected by either one of the
MICs, the high- and low-side transistors of all phases
can be turned off at once.
INT
1
RFO
CFO
FO1
9
FO2
17
FO3
U1
VFO
4, 12, 20
Figure 12-12.
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COM
All-phase shutdown circuit
27
SCM1200MF Series
12.3.3. Undervoltage Lockout for Power
Supply (UVLO)
In case the gate-driving voltage of output transistors
decreases, the steady-state power dissipation of the
transistors increases and the IC may have permanent
damage, in the worst case. To prevent this event, the
SCM1200MF series has the undervoltage lockout
(UVLO) circuit for both of the high- and low-side power
supplies in each controller IC (MIC).
12.3.3.1. Undervoltage Lockout for
High-side Power Supply
(UVLO_VB)
Figure 12-13 shows operational waveforms of the
undervoltage lockout operation for high-side power
supply (i.e., UVLO_VB).
When the voltage between the VBx and HSx pins
(VBx–HSx) decreases to the Logic Operation Stop
Voltage of high-side (VBS(OFF), 11.0 V), the UVLO_VB
circuit in the corresponding phase activates and sets only
HOx signals to logic low. When the voltage between the
VBx and HSx pins increases to the Logic Operation
Start Voltage of high-side (VBS(ON), 11.5 V), the IC
releases the UVLO_VB condition. Then, the HOx
signals become logic high at the rising edge of the first
input command after the UVLO_VB release.
The FOx pin does not transmit any fault signals
during the UVLO_VB activation. In addition, each of
the VBx pins has an internal UVLO_VB filter of about 3
μs, in order to prevent noise-induced malfunctions.
12.3.3.2. Undervoltage Lockout for
Low-side Power Supply
(UVLO_VCC)
Figure 12-14 shows operational waveforms of the
undervoltage lockout operation for low-side power
supply (i.e., UVLO_VCC).
When the VCCx voltage decreases to the Logic
Operation Stop Voltage of low-side (VCC(OFF), 11.0 V),
the UVLO_VCC circuit in the corresponding phase
activates and sets both of HOx and LOx signals to logic
low.
When the VCCx voltage increases to the Logic
Operation Start Voltage of low-side (VCC(ON), 11.5 V),
the IC releases the UVLO_VCC condition. Then it
resumes transmitting HOx and LOx signals according to
the input commands on the HINx and LINx pins.
The FOx pin becomes logic low during the
UVLO_VCC activation.
In addition, each of the VCCx pins has an internal
UVLO_VCC filter of about 3 μs, in order to prevent
noise-induced malfunctions.
HINx
0
LINx
0
UVLO_VCC
operation
VCCx
VCC(ON)
VCC(OFF)
0
HINx
HOx
0
0
LINx
About 3µs
LO responds to input signal.
LOx
0
UVLO_VB
operation
VBx-HSx
VBS(OFF)
0
VBS(ON)
UVLO release
0
HOx
About 3µs
HO restarts at
positive edge after
UVLO_VB release.
LOx
0
No FO output at UVLO_VB.
0
Figure 12-13.
0
Figure 12-14.
UVLO_VCC operational waveforms
12.3.4. Overcurrent Protection (OCP)
0
FOx
FOx
Operational waveforms of UVLO_VB
Figure 12-15 shows an internal circuit diagram of the
OCPx pin, and OCPx pin peripheral circuitry.
The OCPx pin detects overcurrents with input voltage
across external shunt resistor, RS. Since the OCPx pin is
internally pulled-down, the OCPx pin voltage increases
proportionally to a rise in the current running through
the shunt resistor.
Figure 12-16 is a timing chart that represents
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SCM1200MF Series
operation waveforms at OCP. When the OCPx pin
voltage increases to an Overcurrent Protection Threshold
Voltage, VTRIP, of 0.50 V, and then keeps in that
condition for an Overcurrent Protection Blanking Time,
tBK, of 1.65 μs or longer, the OCP circuit starts operating.
The enabled OCP circuit then shuts off the output
transistors and puts the FOx pin into a logic low state.
Even if the OCPx pin voltage falls below VTRIP, the IC
keeps in a logic low state for a fixed OCP hold time (tP)
of 26 μs (typ.). Then, the output transistors operate
according to input signals. Then, the output transistors
operate according to input signals.
The OCP circuits in the SCM1200MF series are used
for detecting abnormal conditions, such as an output
transistor shorted. Therefore, motor operation must be
stopped by the external microcontroller, which can
receive and handle fault signals from the IC. Otherwise,
your application will be more likely to cause short
circuit conditions repeatedly, thus the breakdown of the
output transistors.
Care should also be taken when using a 3-shunt
resistor system in your application. The IC running on
the 3-shunt resistor system only shuts off the output
transistor in the phase where an overcurrent condition
exists. And a fault signal is transmitted from the FOx pin
of the phase being under the overcurrent condition.
As already shown in Figure 12-12, if all of the FOx
pins being used makes a short circuit, a fault signal sent
from the corresponding phase can turn off the output
transistors of all phases (see Section 12.3.2).
length of traces.
Note that overcurrents are undetectable when one or
more of the U, V, and W pins are shorted to ground
(ground fault). In case either of these pins falls into a
state of ground fault, the transistors may be destroyed.
U1
VTRIP
VBB
-
OCPx
+
200kΩ
Blanking
filter
1.65µs(typ.)
CO
Output SW turn-off
and QFO turn-on
COMx
LSx
A/D
RO
DRS
RS
COM
Figure 12-15. Internal circuit diagram of OCPx pin
and OCPx pin peripheral circuitry
HINx
0
LINx
0
To place a shunt resistor in an actual application,
users must set:
● the shunt resistor to have the resistance specified as
shunt resistor, RS (see the recommended operating
condition table, Section 2);
● input voltages of the OCPx pin to keep their levels
within the range defined as the OCPx pin voltage,
VOCP (see the absolute maximum rating table, Section
1); and
● currents through output transistors to keep their levels
under the rated output current (pulsed), IOP (see the
absolute maximum rating table, Section 1).
Because high-frequency switching currents flow
through the shunt resistors, RS, choose a resistor that has
low inductance and allows high power dissipation.
When adding a CR filter (a pair of a filter resistor, RO
and a filter capacitor, CO) to the OCPx pin, the following
should be taken into account. Time constants of RO and
CO should be set to the values listed in Table 12-3.
The larger the time constant, the longer the time that
the OCPx pin voltage rises to VTRIP. And this may cause
permanent damage to the transistors. Consequently, the
time constants given here are determined in
consideration of the total delay time the IC will have.
The filter capacitor, CO, should also be placed near the
IC, between the OCPx and COMx pins with a minimal
tDELAY 0.3µs(typ.)
tBK
tBK
tBK
OCPx
VTRIP
0
HO responds to input signal.
HOx
0
LOx
0
FO restarts
automatically after tP.
FOx
tP
0
Figure 12-16.
OCP operational waveforms
Table 12-3. Recommend time constants for CR filter
Products
Recommend time constants
SCM124×MF
SCM125×MF
0.22 µs or less
SCM126×MF
1 µs or less
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SCM1200MF Series
12.3.5. Simultaneous On-state Prevention
When both of the HINx and LINx pins receive logic
high signals at once, the high- and low-side transistors
turn on at the same time, allowing overcurrents to pass
through. As a result, the switching transistors will be
destroyed. In order to protect this event, the
simultaneous on-state prevention circuit is built into
each of the controller ICs. Note that incorrect command
input and noise interference are also largely responsible
for such a simultaneous-on condition.
When logic high signals are asserted on the HINx and
LINx pins at once, as shown in Figure 12-17, this
function gets activated and turns the high- and low-side
transistors off.
Then, the FOx pin becomes a logic low state, and
sends fault signals during this function activation.
After the IC comes out of the simultaneous On-state,
"HOx" and "LOx" start responding in accordance with
HINx and LINx input commands again. In order to
prevent malfunctions due to noise, the simultaneous
on-state prevention circuitry has a filter of about 0.8 μs.
Note that the function does not have any of dead-time
programming circuits. Input signals to the HINx and
LIN pins must have proper dead times as defined in
Section 0).
When the temperature of the MIC increases to
TDH = 150 °C or more, the corresponding TSD circuit is
activated. When the temperature decreases to
TDL = 120 °C or less, the shut-down condition is
released and the transistors resume operating according
to input signals.
When the TSD circuits is being enabled, FOx pin
becomes logic low and transmits fault signals.
Note that junction temperatures of the output
transistors themselves are not monitored. Do not use the
TSD function as a prevention function against critical
damage to the output transistors.
HINx
0
LINx
0
TSD operation
Tj(MIC)
TDH
TDL
0
HOx
Simultaneous on-state
prevention enabled
HINx
0
LOx
0
0
LINx
FOx
0
HOx
HOx responds to input
signals.
0
About 0.8µs
Figure 12-18.
TSD operational waveforms
0
LOx
About 0.8µs
0
FOx
0
Figure 12-17.
Operational waveforms of Simultaneous
On-state Prevention
12.3.6. Thermal Shutdown (TSD)
The IC has thermal shutdown (TSD) circuits. Figure
12-18 shows the TSD operational waveforms.
In case of overheating, e.g., increased power
dissipation due to overload, or an ambient temperature
rise at the device, the IC shuts down the high- and
low-side output transistors.
Thermal detection is monitored by the MICs (see
Section 7).
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SCM1200MF Series
13. Design Notes
This section also employs the terminal notation
system for pin names, described in the beginning of the
previous section.
13.1. PCB Pattern Layout
Figure 13-1 shows a schematic diagram of a motor
driver circuit. The motor driver circuit consists of
current paths carrying high frequencies and high
voltages, which also bring about negative influences on
IC operation, noise interference, and power dissipation.
Therefore, PCB trace layouts and component
placements play an important role in circuit designing.
Current loops which carry high frequencies and high
voltages should be as small and wide as you can, in
order to maintain a low-impedance state.
In addition, ground traces should be as wide and short
as possible so that radiated EMI levels can be reduced.
U1
VBB
VDC
appropriate tightening within the range of screw
torque defined in Section 4.
● When mounting a heatsink, it is recommended to use
silicone greases.
If a thermally-conductive sheet or an electrically
insulating sheet is used, package cracks may be
occured due to creases at screw tightening. Therefore,
thorough evaluations should be conducted before
using these materials.
● When applying a silicon grease, there must be no
foreign substances between the IC and a heatsink.
Extreme care should be taken not to apply a silicon
grease onto any device pins as much as possible. The
following requirements must be met for proper grease
application:
 Grease thickness: 100 µm
 Heatsink flatness: ±100 µm
 When applying a silicon grease to a heatsink, it
should be applied within the area indicated in
Figure 13-2, below.
Screw hole
Screw hole
25
5.8
MIC3
W
LS3
MIC2
V
LS2
MIC1
U
LS1
Figure 13-1.
5.8
26
27
29
Ground traces
should be wide
and short.
M
M3
Thermal silicone grease
application area
M3
Heatsink
3.1
Figure 13-2.
37.6
3.1
Unit: mm
Recommended application area for
thermal silicone grease
30
13.3. IC Characteristics Measurement
Considerations
32
33
High-frequency, high-voltage
current loops should be as
small and wide as possible.
High-frequency, high-voltage current
paths
13.2. Heatsink Mounting Considerations
This section provides the guidelines for mounting a
heatsink, as follows:
● It is recommended to use a pair of a metric screw of
M3 and a plain washer of 7 mm (φ).
Use a torque screwdriver to tighten the screws.
Tighten the two screws firstly up to about 30% of the
maximum screw torque; then finally up to 100% of
the prescribed maximum screw torque. Perform
When measuring the breakdown voltage and/or
leakage current of the transistors incorporated in the IC,
the gate and emitter of each transistor should have the
same potential.
Moreover, care should be taken because the collectors
are all internally connected to the VBB pin.
The output (U, V, and W) pins are connected to the
emitters of the corresponding high-side transistors; and
the LSx pins are connected to the emitters of the
low-side transistors. The gates of the high-side
transistors are pulled down to the output (U, V, W) pins;
similarly, the gates of the low-side transistors are pulled
down to the COMx pins.
Note that the output, LS, and COMx pins must be
connected appropriately before measuring breakdown
voltage and/or leak current. Otherwise the switching
transistors may result in permanent damage.
The figures below are the schematic circuit diagrams
of a typical measurement circuit for breakdown voltage:
Figure 13-3 shows the high-side transistor (Q1H) in U
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SCM1200MF Series
phase, and Figure 13-4 shows the low-side transistor
(Q1L) in U phase. And all the pins that are not
represented in these figures are open.
Before conducting a measurement, be sure to isolate
the ground of a measurement phase from those of other
two phases. Then, in each of the two separated phases,
connect the LSx and COMx pins each other at the same
potential, and leave them unused and floated.
U1
VBB
25
Q1H
4 COM1
MIC1
U 32
V
14. Calculating
Power
Losses
and
Estimating Junction Temperatures
This section describes the procedures to: calculate
power losses in a switching transistor; and estimate
junction temperatures. Note that the following
descriptions are applicable to the SCM1200MF series,
which is controlled by a three-phase sine-wave PWM
driving strategy.
The total power losses in an IGBT can be obtained by
taking the sum of steady-state loss, PON, and switching
loss, PSW.
The following subsections contain the mathematical
procedures to calculate power losses in an IGBT and its
junction temperature.
Q1L
LS1
33
14.1. IGBT Steady-State Loss, PON
31
Q2H
V
12 COM2
29
MIC2
Q2L
LS230
Q3H
20 COM3
MIC3
W26
Q3L
LS3
27
Figure 13-3.
Typical measurement circuit of high-side
transistor (Q1H) in U phase
The steady-state loss in an IGBT can be computed by
using the VCE(SAT) vs. IC curves, shown in Section 15.3.1.
As shown in Figure 14-1, the following linear
approximate equation can be obtained from the curves:
VCE(SAT) = α × IC + β. The slope and intercept of the
linear approximate equation are used in Formula (4).
Table 14-1 lists the reference slopes and intercepts of
the linear approximate equation at a half of output
current, 0 to 0.5 × IO.
The values calculated with the linear approximation
greatly differ at the point where IC is near zero. But in
dissipation calculation, the difference is regarded as an
error tolerance. Hence, the equation for the steady-state
loss, PON, is:
U1
VBB
25
Q1H
4 COM1
U 32
MIC1
(4)
V
Q1L
LS1
33
31
Q2H
12 COM2
V
29
MIC2
Q2L
LS230
Q3H
20 COM3
MIC3
Where:
VCE(SAT) is the collector-to-emitter saturation
voltage of the IGBT in V,
IC is the collector current of the IGBT in A, and
DT is the on-time duty cycle.
W26
Q3L
LS3
27
Figure 13-4.
Typical measurement circuit of low-side
transistor (Q1L) in U phase
M is the modulation index (0 to 1),
cosθ is the motor power factor (0 to 1),
IM is the effective motor current in A,
α is the slope of the linear approximate equation in the
VCE(SAT) vs. IC curve, and
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SCM1200MF Series
β is the intercept of the linear approximate equation in
the VCE(SAT) vs. IC curve.
VCC=15V
2.5
14.3. Estimating Junction Temperature of
IGBT
The junction temperature of an IGBT, Tj, can be
estimated with Formula (6), below:
125°C
VCE(SAT) (V)
2.0
y = 0.036x + 1.359
1.5
(6)
1.0
75°C
0.5
25°C
y = 0.108x + 0.831
0.0
0
1
Figure 14-1.
2
3
4 5
IC (A)
6
7
8
9
10
Where
R(j-c)Q is the junction-to-case thermal resistance of the
IGBT product (°C/W), and
TC is the case temperature (°C), measured at the point
shown in Figure 3-1.
Linear approximate equation of
VCE(SAT) vs. IC curve
Table 14-1. Reference slopes (α) and intercepts (β) of
linear approximate equation at 0 to 0.5 × IO in VCE(SAT)–IC
curve
Part Number
SCM1261MF
SCM1242MF
SCM1263MF
SCM1243MF
SCM1265MF
SCM1245MF
SCM1256MF
SCM1246MF
25°C
125°C
α
0.108
β
0.831
α
0.036
β
1.359
0.093
0.694
0.060
0.974
0.043
0.907
0.063
0.702
0.046
0.739
0.031
0.991
14.2. GBT Switching Loss, PSW
The switching loss in an IGBT can be calculated by
Formula (5), letting IM be the effective current value of a
motor:
(5)
where:
fc is the PWM carrier frequency in Hz,
VDC is the main power supply voltage in V (i.e., the
VBB pin input voltage),
EON(IM) is the turn-on loss at IM in J, and
EOFF(IM) is the turn-off loss at IM in J.
For EON(IM) and EOFF(IM), see also Section 15.3.2.
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SCM1200MF Series
15. Typical Characteristics
15.1. Transient Thermal Resistance Curves
The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), with
steady-state thermal resistance = 1.
15.1.1. SCM1261MF
Ratio of Transient Thermal Resistance
1.00
0.10
0.01
1
10
100
1000
10000
1000
10000
Time (ms)
15.1.2. SCM1242MF, SCM1263MF, SCM1243MF
Ratio of Transient Thermal Resistance
1.00
0.10
0.01
1
10
100
Time (ms)
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SCM1200MF Series
15.1.3. SCM1265MF, SCM1245MF
Ratio of Transient Thermal Resistance
1.00
0.10
0.01
1
10
100
1000
10000
1000
10000
Time (ms)
15.1.4. SCM1246MF, SCM1256MF
Ratio of Transient Thermal Resistance
1.00
0.10
0.01
1
10
100
Time (ms)
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SCM1200MF Series
15.2. Performance Curves of Control Parts
Figure 15-1 to Figure 15-26 provide performance curves of the control parts integrated in the SCM1200MF series,
including variety-dependent characteristics and thermal characteristics. The term Tj represents the junction temperature
of the control parts.
Table 15-1. Typical characteristics of control parts
Figure Number
Figure 15-1
Figure 15-2
Figure 15-3
Figure 15-4
Figure 15-5
Figure 15-6
Figure 15-7
Figure 15-8
Figure 15-9
Figure 15-10
Figure 15-11
Figure 15-12
Figure 15-13
Figure 15-14
Figure 15-15
Figure 15-16
Figure 15-17
Figure 15-18
Figure 15-19
Figure 15-20
Figure 15-21
Figure 15-22
Figure 15-23
Figure 15-24
Figure 15-25
Figure 15-26
Figure Caption
Logic Supply Current in three-phase operating, ICC vs. Tj
Logic Supply Current in three-phase operating, ICC vs. VCCx pin voltage, VCC
Logic Supply Current in single-phase operating (HINx = 0 V), IBS vs. Tj
Logic Supply Current in single-phase operating (HINx = 5 V), IBS vs. Tj
Logic Supply Current in single-phase operating (HINx = 0 V), IBS vs. VBx pin voltage,
VB
Input Current at High Level (HINx or LINx) vs. Tj
High Level Input Signal Threshold Voltage, VIH vs. Tj
Low Level Input Signal Threshold Voltage, VIL vs. Tj
High-side turn-on propagation delay vs. Tj (from HINx to HOx)
High-side turn-off propagation delay vs. Tj (from HINx to HOx)
Low-side turn-on propagation delay vs. Tj (from LINx to LOx)
Low-side turn-off propagation delay vs. Tj (from LINx to LOx)
Minimum transmittable pulse width for high-side switching, tHIN(MIN) vs. Tj
Minimum transmittable pulse width for low-side switching, tLIN(MIN) vs. Tj
Typical output pulse widths, tHO, tLO vs. input pulse widths, tHIN, tLIN
FOx Pin Voltage in Normal Operation, VFOL vs. Tj
Logic Operation Start Voltage, VBS(ON) vs. Tj
Logic Operation Stop Voltage, VBS(OFF) vs. Tj
Logic Operation Start Voltage, VCC(ON) vs. Tj
Logic Operation Stop Voltage, VCC(OFF) vs. Tj
UVLO_VB filtering time vs. Tj
UVLO_VCC filtering time vs. Tj
Overcurrent Protection Threshold Voltage, VTRIP vs. Tj
Blanking Time, tBK + propagation delay, tD vs. Tj
Overcurrent Protection Hold Time, tP vs. Tj
Filtering time of Simultaneous On-state Prevention Function vs. Tj
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VCC=15V, HIN=L, LIN=L
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
HIN=L, LIN=L
4.0
Max.
3.5
3.0
Typ.
Min.
ICC(mA)
ICC(mA)
SCM1200MF Series
2.5
125°C
25°C
2.0
1.5
－30°C
1.0
0.5
0.0
-30
0
30
60
90
120
150
12
13
14
15
Figure 15-1.
16
17
18
19
20
VCC (V)
Tj (°C)
Logic Supply Current in three-phase
operating, ICC vs. Tj
Figure 15-2. Logic Supply Current in three-phase
operating, ICC vs. VCCx pin voltage, VCC
VB=15V, HIN=0V
VB=15V, HIN=5V
250
250
Max.
200
150
Typ.
150
Min.
100
Typ.
IBS (µA)
IBS (µA)
Max.
200
50
Min.
100
50
0
0
-30
0
30
60
90
120
150
-30
0
30
Tj (°C)
Figure 15-3. Logic Supply Current in single-phase
operating (HINx = 0 V), IBS vs. Tj
90
120
150
Figure 15-4. Logic Supply Current in single-phase
operating (HINx = 5 V), IBS vs. Tj
VB=15V
180
160
140
120
100
80
60
40
20
0
125°C
25°C
－30°C
IN=5V
400
IIN (µA)
IBS (µA)
60
Tj (°C)
350
Max.
300
Typ.
250
Min.
200
150
100
50
0
12
13
14
15
16
17
18
19
20
-30
30
60
90
120
150
Tj (°C)
VB (V)
Figure 15-5. Logic Supply Current in single-phase
operating (HINx = 0 V), IBS vs. VBx pin voltage, VB
0
Figure 15-6.
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Input Current at High Level (HINx or
LINx) vs. Tj
37
SCM1200MF Series
2.6
2.0
2.4
1.8
2.0
Max.
1.8
Typ.
1.6
Min.
1.4
1.6
VIL (V)
VIH (V)
2.2
Max.
1.4
Typ.
1.2
Min.
1.0
1.2
1.0
0.8
-30
0
30
60
90
120
150
-30
0
30
Tj (°C)
Figure 15-7.
High Level Input Signal Threshold
Voltage, VIH vs. Tj
Figure 15-8.
90
120
150
Low Level Input Signal Threshold
Voltage, VIL vs. Tj
800
500
Max.
400
Typ.
300
Min.
200
100
High-side turn-off propagation
delay (µs)
High-side turn-on propagation
delay (µs)
600
0
-30
0
30
60
90
120
700
Max.
600
500
Typ.
400
Min.
300
200
100
0
-30
150
0
30
Tj (°C)
60
90
120
150
Tj (°C)
High-side turn-on propagation delay vs. Tj
(from HINx to HOx)
600
500
400
Max.
300
Typ.
Min.
200
100
Figure 15-10.
Low-side turn-off propagation
delay (µs)
Figure 15-9.
Low-side turn-on propagation
delay (µs)
60
Tj (°C)
High-side turn-off propagation delay vs.
Tj (from HINx to HOx)
800
700
600
Max.
500
Typ.
400
Min.
300
200
100
0
0
-30
0
30
60
90
120
150
-30
Tj (°C)
Figure 15-11.
Low-side turn-on propagation delay vs. Tj
(from LINx to LOx)
0
30
60
90
120
150
Tj (°C)
Figure 15-12.
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Low-side turn-off propagation delay vs.
Tj (from LINx to LOx)
38
500
450
400
350
300
250
200
150
100
50
0
Max.
Typ.
Min.
-30
0
30
60
90
120
tLIN(MIN) (ns)
tHIN(MIN) (ns)
SCM1200MF Series
150
500
450
400
350
300
250
200
150
100
50
0
Max.
Typ.
Min.
-30
0
30
Tj (°C)
Figure 15-13. Minimum transmittable pulse width for
high-side switching, tHIN(MIN) vs. Tj
1000
200
VFOL (mV)
tHO, tLO(typ.) (ns)
150
250
800
600
400
Max.
Typ.
Min.
150
100
50
200
0
0
0
200
400
600
800
1000
1200
-30
0
30
tHIN, tLIN (ns)
Figure 15-15.
Typical output pulse widths, tHO, tLO vs.
Figure 15-16.
12.50
12.25
11.75
Max.
11.50
Typ.
11.25
Min.
11.00
10.75
10.50
0
30
60
90
120
150
VBS(OFF) (V)
12.00
-30
90
120
150
Logic Operation Start Voltage, VBS(ON) vs.
Tj
FOx Pin Voltage in Normal Operation,
VFOL vs. Tj
12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
Max.
Typ.
Min.
-30
Tj (°C)
Figure 15-17.
60
Tj (°C)
input pulse widths, tHIN, tLIN
VBS(ON) (V)
120
FO pull up voltage=5V, RFO=3.3kΩ, FO is low status
300
High side
Low side
1200
90
Figure 15-14. Minimum transmittable pulse width for
low-side switching, tLIN(MIN) vs. Tj
Tj=25°C, VCC=15V
1400
60
Tj (°C)
0
30
60
90
120
150
Tj (°C)
Figure 15-18.
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Logic Operation Stop Voltage, VBS(OFF)
vs. Tj
39
SCM1200MF Series
12.50
12.25
11.75
Max.
11.50
Typ.
11.25
VCC(OFF) (V)
VCC(ON) (V)
12.00
Min.
11.00
10.75
10.50
-30
0
30
60
90
120
12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0
150
Max.
Typ.
Min.
-30
0
30
Tj (°C)
Logic Operation Start Voltage, VCC(ON) vs.
Tj
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max.
Typ.
Min.
-30
0
30
60
90
120
150
150
Max.
Typ.
Min.
-30
0
30
60
90
120
150
Tj (°C)
UVLO_VB filtering time vs. Tj
Figure 15-22.
4.0
530
3.5
Max.
510
Typ.
500
tBK + tD (µs)
540
520
VTRIP (mV)
120
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tj (°C)
Figure 15-21.
90
Figure 15-20. Logic Operation Stop Voltage, VCC(OFF) vs.
Tj
UVLO_VCCフィルタ (µs)
UVLO_VBフィルタ (µs)
Figure 15-19.
60
Tj (°C)
UVLO_VCC filtering time vs. Tj
3.0
2.5
Max.
2.0
1.5
Typ.
480
1.0
Min.
470
0.5
490
Min.
0.0
460
-30
0
30
60
90
120
150
-30
Tj (°C)
Figure 15-23.
Overcurrent Protection Threshold Voltage,
VTRIP vs. Tj
0
30
60
90
120
150
Tj (°C)
Figure 15-24.
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Blanking Time, tBK + propagation delay,
tD vs. Tj
40
50
45
40
35
30
25
20
15
10
5
0
1.4
Max.
Typ.
Min.
-30
0
30
60
90
120
150
Filtering time of Simultaneous
On-state Prevention Function
(µs)
tP (µs)
SCM1200MF Series
1.2
Max.
1.0
0.8
Typ.
0.6
Min.
0.4
0.2
0.0
-30
Tj (°C)
0
30
60
90
120
150
Tj (°C)
Figure 15-25.
Overcurrent Protection Hold Time, tP vs.
Tj
Figure 15-26.
Filtering time of Simultaneous On-state
Prevention Function vs. Tj
15.3. Performance Curves of Output Parts
15.3.1. Output Transistor Performance Curves
15.3.1.1. SCM1261M
VCC=15V
2.5
2.0
2.0
1.5
1.5
VF (V)
VCE(SAT) (V)
2.5
1.0
125°C
75°C
25°C
0.5
0.5
0.0
0
1
2
3
1.0
4
5
6
7
8
9
10
125°C
25°C 75°C
0.0
0
1
2
IC (A)
Figure 15-27.
IGBT VCE(SAT) vs. IC
Figure 15-28.
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3
4
5
IF (A)
6
7
8
9
10
Freewheeling diode VF vs. IF
41
SCM1200MF Series
15.3.1.2. SCM1242MF, SCM1263MF, SCM1243MF
VCC=15V
2.5
2.5
2.0
VF (V)
VCE(SAT) (V)
2.0
1.5
1.0
125°C
75°C
0.5
1.5
1.0
125°C
75°C
25°C
0.5
25°C
0.0
0.0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
3
4
5
7
8
9 10 11 12 13 14 15
IF (A)
IC (A)
Figure 15-29.
6
IGBT VCE(SAT) vs. IC
Figure 15-30.
Freewheeling diode VF vs. IF
2.5
2.5
2.0
2.0
1.5
1.5
VF (V)
VCE(SAT) (V)
15.3.1.3. SCM1265MF, SCM1245MF
1.0
125°C
0.5
25°C 75°C
0.0
0.0
2
125°C
0.5
75°C
25°C
0
1.0
4
6
8
10
12
14
16
18
0
20
2
4
6
10
12
14
16
18
20
IF (A)
IC (A)
Figure 15-31.
8
IGBT VCE(SAT) vs. IC
Figure 15-32.
Freewheeling diode VF vs. IF
15.3.1.4. SCM1256MF, SCM1246MF
2.5
2.0
2.0
1.5
1.5
VF (V)
VCE(SAT) (V)
2.5
1.0
125°C
0.5
25°C
1.0
125°C
0.5
75°C
25°C
0.0
75°C
0.0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
0
2
4
6
IC (A)
Figure 15-33.
IGBT VCE(SAT) vs. IC
8 10 12 14 16 18 20 22 24 26 28 30
IF (A)
Figure 15-34.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Freewheeling diode VF vs. IF
42
SCM1200MF Series
15.3.2. Switching Loss
Conditions: VBB = 300 V, half-bridge circuit with inductance load.
15.3.2.1. SCM1261MF
VB=15V
VCC=15V
800
1000
E (µJ)
400
Turn-on
200
Turn-on
800
Turn-off
600
600
400
Turn-off
200
0
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
IC (A)
Figure 15-35.
8
10
12
14
16
18
20
IC (A)
High-side switching loss (Tj = 25°C)
Figure 15-36.
Low-side switching loss (Tj = 25°C)
VB=15V
VCC=15V
Turn-on
1000
1000
600
Turn-off
Turn-on
800
E (µJ)
800
400
1200
SCM12161MF
1200
SCM1261MF
0
E (µJ)
SCM1261MF
1000
E (µJ)
1200
SCM1261MF
1200
600
400
Turn-off
200
200
0
0
0
2
4
6
8
10
12
14
16
18
20
0
2
IC (A)
Figure 15-37.
High-side switching loss (Tj = 125°C)
4
6
8
10
12
14
16
18
20
IC (A)
Figure 15-38.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Low-side switching loss (Tj = 125°C)
43
SCM1200MF Series
700
600
600
E (µJ)
400
300
200
Turn-on
500
400
300
Turn-off
200
Turn-on
100
100
0
0
0
1
2
3
4
5
6
7
8
0
9 10 11 12 13 14 15
1
2
3
4
5
IC (A)
Figure 15-39
High-side switching loss (Tj = 25°C)
Figure 15-40.
VB=15V
7
8
9 10 11 12 13 14 15
700
Turn-off
600
Low-side switching loss (Tj = 25°C)
VCC=15V
800
SCM1242MF
800
Turn-on
700
600
500
500
400
Turn-on
300
E (µJ)
E (µJ)
6
IC (A)
SCM1242MF
E (µJ)
700
Turn-off
500
VCC=15V
800
SCM1242MF
VB=15V
800
SCM1242MF
15.3.2.2. SCM1242MF
400
200
200
100
100
0
Turn-off
300
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
IC (A)
Figure 15-41.
High-side switching loss (Tj = 125°C)
3
4
5
6
7
8
9 10 11 12 13 14 15
IC (A)
Figure 15-42.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Low-side switching loss (Tj = 125°C)
44
SCM1200MF Series
15.3.2.3. SCM1263MF
VB=15V
Turn-off
Turn-on
500
400
400
E (µJ)
300
200
Turn-on
100
300
200
Turn-off
100
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
3
4
5
IC (A)
Figure 15-43
6
7
8
9 10 11 12 13 14 15
IC (A)
High-side switching loss (Tj = 25°C)
Figure 15-44.
Low-side switching loss (Tj = 25°C)
VB=15V
Turn-off
E (µJ)
500
400
300
Turn-on
600
Turn-on
500
E (µJ)
600
VCC=15V
700
SCM12163MF
700
SCM1263MF
E (µJ)
500
600
SCM1263MF
600
VCC=15V
700
SCM1263MF
700
400
300
200
200
100
100
Turn-off
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
IC (A)
Figure 15-45.
High-side switching loss (Tj = 125°C)
3
4
5
6
7
8
9 10 11 12 13 14 15
IC (A)
Figure 15-46.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Low-side switching loss (Tj = 125°C)
45
SCM1200MF Series
15.3.2.4. SCM1243MF
VB=15V
VCC=15V
400
300
200
100
500
Turn-on
400
E (µJ)
Turn-on
300
200
100
Turn-off
0
Turn-off
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
3
4
5
IC (A)
Figure 15-47
6
7
8
9 10 11 12 13 14 15
IC (A)
High-side switching loss (Tj = 25°C)
Figure 15-48.
Low-side switching loss (Tj = 25°C)
VB=15V
Turn-on
400
300
200
Turn-off
100
500
Turn-on
400
E (µJ)
500
VCC=15V
600
SCM1243MF
600
SCM1243MF
0
E (µJ)
SCM1243MF
500
E (µJ)
600
SCM1243MF
600
300
200
Turn-off
100
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
0
1
2
IC (A)
Figure 15-49.
High-side switching loss (Tj = 125°C)
3
4
5
6
7
8
9 10 11 12 13 14 15
IC (A)
Figure 15-50.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Low-side switching loss (Tj = 125°C)
46
SCM1200MF Series
15.3.2.5. SCM1265MF
VB=15V
VCC=15V
800
1000
Turn-on
800
Turn-on
E (µJ)
600
400
Turn-off
200
600
400
Turn-off
200
0
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
IC (A)
Figure 15-51
8
10
12
14
16
High-side switching loss (Tj = 25°C)
Figure 15-52.
20
Low-side switching loss (Tj = 25°C)
VB=15V
VCC=15V
1200
SCM12165MF
1200
1000
1000
600
Turn-on
Turn-on
800
E (µJ)
800
400
18
IC (A)
SCM1265MF
0
E (µJ)
SCM1265MF
1000
E (µJ)
1200
SCM1265MF
1200
600
400
Turn-off
200
200
Turn-off
0
0
0
2
4
6
8
10
12
14
16
18
20
0
2
IC (A)
Figure 15-53.
High-side switching loss (Tj = 125°C)
4
6
8
10
12
14
16
18
20
IC (A)
Figure 15-54.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Low-side switching loss (Tj = 125°C)
47
SCM1200MF Series
15.3.2.6. SCM1245MF
VB=15V
VCC=15V
800
Turn-on
E (µJ)
600
400
Turn-on
600
400
200
200
Turn-off
Turn-off
0
2
4
6
8
10
12
14
16
18
0
0
20
2
4
6
IC (A)
Figure 15-55
8
10
12
14
16
18
20
IC (A)
High-side switching loss (Tj = 25°C)
Figure 15-56.
Low-side switching loss (Tj = 25°C)
VB=15V
VCC=15V
1000
SCM1245MF
1000
800
Turn-on
800
Turn-on
600
E (µJ)
600
SCM1245MF
0
E (µJ)
SCM1245MF
800
E (µJ)
1000
SCM1245MF
1000
400
200
400
200
Turn-off
0
Turn-off
0
0
2
4
6
8
10
12
14
16
18
20
0
2
IC (A)
Figure 15-57.
High-side switching loss (Tj = 125°C)
4
6
8
10
12
14
16
18
20
IC (A)
Figure 15-58.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Low-side switching loss (Tj = 125°C)
48
SCM1200MF Series
15.3.2.7. SCM1256MF
VB=15V
VCC=15V
Turn-off
1000
800
E (µJ)
600
Turn-on
200
600
Turn-on
400
200
0
0
0
5
10
15
20
25
30
0
5
10
IC (A)
Figure 15-59
15
20
High-side switching loss (Tj = 25°C)
Figure 15-60.
VCC=15V
SCM1256MF
Turn-off
1000
E (µJ)
800
600
Turn-on
400
200
0
0
5
10
15
20
25
30
1800
1600
1400
1200
1000
800
600
400
200
0
Turn-off
Turn-on
0
IC (A)
Figure 15-61.
30
Low-side switching loss (Tj = 25°C)
VB=15V
1400
1200
25
IC (A)
High-side switching loss (Tj = 125°C)
SCM1256MF
E (µJ)
Turn-off
1200
800
400
E (µJ)
SCM1256MF
1200
1000
1400
SCM1256MF
1400
5
10
15
20
25
30
IC (A)
Figure 15-62.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Low-side switching loss (Tj = 125°C)
49
SCM1200MF Series
15.3.2.8. SCM1246MF
VB=15V
VCC=15V
1000
1200
E (µJ)
800
600
400
200
Turn-on
1000
Turn-on
800
600
400
Turn-off
200
Turn-off
0
0
5
10
15
20
25
30
0
5
10
IC (A)
Figure 15-63
15
20
High-side switching loss (Tj = 25°C)
Figure 15-64.
30
Low-side switching loss (Tj = 25°C)
VB=15V
VCC=15V
1400
SCM1246MF
1400
1200
Turn-on
1000
25
IC (A)
600
400
Turn-on
1000
E (µJ)
800
1200
800
600
400
Turn-off
SCM1246MF
0
E (µJ)
SCM1246MF
1200
E (µJ)
1400
SCM1246MF
1400
Turn-off
200
200
0
0
0
5
10
15
20
25
30
0
IC (A)
Figure 15-65.
High-side switching loss (Tj = 125°C)
5
10
15
20
25
30
IC (A)
Figure 15-66.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
Low-side switching loss (Tj = 125°C)
50
SCM1200MF Series
15.4. Allowable Effective Current Curves
The following curves represent allowable effective currents in sine-wave driving under a three-phase PWM system.
All the values listed in this section, including VCE(SAT) of output transistors and switching losses, are typical values.
Operating conditions: VBB pin input voltage (VDC) = 300 V, VCCx pin input voltage (VCC) = 15 V, modulation
index (M) = 0.9, motor power factor (cosθ) = 0.8, junction temperature (Tj) = 150°C.
15.4.1. SCM1261MF
fC = 2 kHz
Allowable Effective Current Curves (Arms)
10
8
6
4
SCM1261MF
2
0
25
50
75
100
125
150
TC (°C)
Figure 15-67.
Allowable effective current, 10 A device (fC = 2 kHz)
fC = 16 kHz
Allowable Effective Current Curves (Arms)
10
8
6
4
2
SCM1261MF
0
25
50
75
100
125
150
TC (°C)
Figure 15-68.
Allowable effective current, 10 A device (fC = 16 kHz)
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
51
SCM1200MF Series
Allowable Effective Current Curves (Arms)
15.4.2. SCM1242MF, SCM1263MF, SCM1243MF
fC = 2 kHz
15
10
5
SCM1242,63MF
SCM1243MF
0
25
50
75
100
125
150
TC (°C)
Figure 15-69.
Allowable effective current, 15 A device (fC = 2 kHz)
fC = 16 kHz
Allowable Effective Current Curves (Arms)
15
10
5
SCM1242,63MF
SCM1243MF
0
25
50
75
100
125
150
TC (°C)
Figure 15-70.
Allowable effective current, 15 A device (fC = 16 kHz)
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
52
SCM1200MF Series
Allowable Effective Current Curves (Arms)
15.4.3. SCM1265MF, SCM1245MF
fC = 2 kHz
20
15
10
5
SCM1265MF
SCM1245MF
0
25
50
75
100
125
150
TC (°C)
Figure 15-71.
Allowable effective current, 20 A device (fC = 2 kHz)
fC = 16 kHz
Allowable Effective Current Curves (Arms)
20
15
10
5
SCM1265MF
SCM1245MF
0
25
50
75
100
125
150
TC (°C)
Figure 15-72.
Allowable effective current, 20 A device (fC = 16 kHz)
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
53
SCM1200MF Series
Allowable Effective Current Curves (Arms)
15.4.4. SCM1256MF, SCM1246MF
fC = 2 kHz
30
25
20
15
10
SCM1256MF
5
SCM1246MF
0
25
50
75
100
125
150
TC (°C)
Allowable Effective Current Curves (Arms)
Figure 15-73.
Allowable effective current, 30 A device (fC = 2 kHz)
fC = 16 kHz
30
25
20
15
10
SCM1256MF
5
SCM1246MF
0
25
50
75
100
125
150
TC (°C)
Figure 15-74.
Allowable effective current, 30 A device (fC = 16 kHz)
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
54
SCM1200MF Series
15.5. Short Circuit SOA (Safe Operating Area)
Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, Tj = 125°C, 1 pulse.
15.5.1. SCM1261MF
Collector Current, IC(PEAK) (A)
200
150
100
Short Circuit SOA
50
0
0
1
2
3
4
5
3
4
5
Pulse width (µs)
15.5.2. SCM1242MF, SCM1263MF, SCM1243MF
Collector Current, IC(PEAK) (A)
250
200
150
100
Short Circuit SOA
50
0
0
1
2
Pulse width (µs)
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
55
SCM1200MF Series
15.5.3. SCM1265MF, SCM1245MF
300
Collector Current, IC(PEAK) (A)
250
200
150
Short Circuit SOA
100
50
0
0
1
2
3
4
5
3
4
5
Pulse width (µs)
15.5.4. SCM1256MF, SCM1246MF
400
Collector Current, IC(PEAK) (A)
350
300
250
200
150
Short Circuit SOA
100
50
0
0
1
2
Pulse width (µs)
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
56
SCM1200MF Series
16. Pattern Layout Example
The following show the schematic diagrams of a PCB pattern layout example using an SCM1200MF series device.
For our recommended terminal hole size, see Section 10.4.
Figure 16-1.
Figure 16-2.
Top view
Bottom view
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
57
SCM1200MF Series
LS1
1
R4
FO1
33
2 OCP1
C20
3 LIN1
4 COM1
U 32
5 HIN1
6 VCC1
C17
C14
31
VB1
8 HS1
7
C1
9
FO2
LS230
10 OCP2
11 LIN2
12 COM2
1
2
3
V
29
13 HIN2
14 VCC2
SV4
C18
C15
1
5
6
7
8
R5
R6
R7
R8
R9
R10
C2
17
FO3
LS3
27
18 OCP3
19 LIN3
20 COM3
W26
21 HIN3
22 VCC3
9
C19
VBB
C5
C6
C7
C8
C9
C10
10
SV2
C16
D5
25
1
VB3
24 HS3
23
2
C3
SV3
1
R13
R12
R11
2
3
C4
D4
SV1
Figure16-3.
C11
C12/RT
C13
4
C21
D1
C23
R14
R1
4
D2
C24
R15
R2
3
D3
C25
R16
R3
2
28
VB2
16 HS2
15
Schematic circuit diagram of PCB pattern layout example
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
58
SCM1200MF Series
17. Typical Motor Driver Application
This section contains information on the typical motor driver application listed in the previous section, including a
circuit diagram, specifications, and the bill of the materials used.
● Motor driver specifications
IC
Main Supply Voltage, VDC
Output Power Rating
SCM1242MF
300VDC (Typ.)
1.35 kW
● Circuit diagram
See Figure16-3.
● Bill of materials
Symbol
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12/RT
C13
C14
C15
C16
C17
C18
C19
C20
C21
C22*
C23*
C24*
C25
Part type
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Film
Ceramic
Ceramic
Ceramic
Ceramic
Ratings
47 μF, 50 V
47 μF, 50 V
47 μF, 50 V
100 μF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
0.01 μF, 50 V
0.01 μF, 50 V
0.01 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.01 μF, 50 V
0.1 μF, 630 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
Open
Symbol
Part type
Ratings
R1*
Metal plate
27 mΩ, 2W
R2*
Metal plate
27 mΩ, 2W
R3*
Metal plate
27 mΩ, 2W
R4
General
4.7 kΩ, 1/8W
R5
General
100 Ω, 1/8W
R6
General
100 Ω, 1/8W
R7
General
100 Ω, 1/8W
R8
General
100 Ω, 1/8W
R9
General
100 Ω, 1/8W
R10
General
100 Ω, 1/8W
R11
General
100 Ω, 1/8W
R12
General
100 Ω, 1/8W
R13
General
100 Ω, 1/8W
R14*
General
Open
R15*
General
Open
R16*
General
Open
D1
General
1 A, 50 V
D2
General
1 A, 50 V
D3
General
1 A, 50 V
D4
Zener
VZ = 20 V, 0.5 W
D5
General
Open
SV1
Pin header
Equiv. to MA04-1
SV2
Pin header
Equiv. to MA10-1
SV3
Connector
Equiv. to B2P3-VH
SV4
Connector
Equiv. to B3P5-VH
IPM1
IC
SCM1242MF
* Refers to a part that requires adjustment based on operation performance in an actual application.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
59
SCM1200MF Series
IMPORTANT NOTES
● All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the
“Sanken Products”) are current as of the date this document is issued. All contents in this document are subject to any change
without notice due to improvement, etc. Please make sure that the contents set forth in this document reflect the latest revisions
before use.
● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home
appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,
please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to
Sanken. If considering use of the Sanken Products for any applications that require higher reliability (transportation equipment and
its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you
must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal,
on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the Sanken Products. Any use
of the Sanken Products without the prior written consent of Sanken in any applications where extremely high reliability is required
(aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.
● In the event of using the Sanken Products by either (i) combining other products or materials therewith or (ii) physically,
chemically or otherwise processing or treating the same, you must duly consider all possible risks that may result from all such
uses in advance and proceed therewith at your own responsibility.
● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the
occurrence of any failure or defect in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
the Sanken Products are used, upon due consideration of a failure occurrence rate or derating, etc., in order not to cause any human
injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer
to the relevant specification documents and Sanken’s official website in relation to derating.
● No anti-radioactive ray design has been adopted for the Sanken Products.
● No contents in this document can be transcribed or copied without Sanken’s prior written consent.
● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples and
evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the
Sanken Products and Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you,
users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any
other rights of you, users or any third party, resulting from the foregoing.
● All technical information described in this document (the “Technical Information”) is presented for the sole purpose of reference
of use of the Sanken Products and no license, express, implied or otherwise, is granted hereby under any intellectual property
rights or any other rights of Sanken.
● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied,
as to the quality of the Sanken Products (including the merchantability, or fitness for a particular purpose or a special environment
thereof), and any information contained in this document (including its accuracy, usefulness, or reliability).
● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and
regulations that regulate the inclusion or use of any particular controlled substances, including, but not limited to, the EU RoHS
Directive, so as to be in strict compliance with such applicable laws and regulations.
● You must not use the Sanken Products or the Technical Information for the purpose of any military applications or use, including
but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Technical
Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each
country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan,
and follow the procedures required by such applicable laws and regulations.
● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including
the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the contents included herein.
● Please refer to the relevant specification documents in relation to particular precautions when using the Sanken Products, and refer
to our official website in relation to general instructions and directions for using the Sanken Products.
SCM1200MF-DSJ Rev.1.1
SANKEN ELECTRIC CO.,LTD.
Feb. 19, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO.,LTD. 2015
60