SiHA6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. () at 25 °C VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration Single APPLICATIONS D Thin-Lead TO-220 FULLPAK • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) G GD S Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S N-Channel MOSFET ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA6N65E-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) e VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID IDM Linear Derating Factor UNIT V 7 5 A 18 0.63 W/°C Single Pulse Avalanche Energy b EAS 56 mJ Maximum Power Dissipation PD 31 W TJ, Tstg -55 to +150 °C Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c For 10 s dV/dt 37 27 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. e. Limited by maximum junction temperature. S16-1094-Rev. A, 06-Jun-16 Document Number: 91844 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA6N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA 43 65 Maximum Junction-to-Case (Drain) RthJC 3.1 4.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current VDS VGS = 0 V, ID = 250 μA 650 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.73 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS VGS = ± 30 V - - ±1 VDS = 650 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 μA - 0.5 0.6 gfs VDS = 30 V, ID = 3 A - 2 - S Input Capacitance Ciss 820 1640 Coss 20 40 80 Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz 410 Output Capacitance 2 4 8 Effective Output Capacitance, Energy Related a Co(er) - 36 - Effective Output Capacitance, Time Related b Co(tr) - 117 - - 24 48 - 6 - Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V ID = 3 A Dynamic pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 11 - Turn-On Delay Time td(on) - 14 28 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 3 A, VDS = 520 V VDD = 520 V, ID = 3 A, VGS = 10 V, Rg = 9.1 - 12 24 - 30 60 - 20 40 f = 1 MHz, open drain 0.7 1.4 2.7 - - 7 - - 18 nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 3 A, VGS = 0 V TJ = 25 °C, IF = IS = 3 A, dI/dt = 100 A/μs, VR = 25 V S - 0.83 1.3 V 118 237 474 ns - 2.2 - μC - 16 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S16-1094-Rev. A, 06-Jun-16 Document Number: 91844 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA6N65E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 20 15 3.0 TJ = 25 °C ID = 3 A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 25 10 5 2.5 2.0 1.5 1.0 0.5 0 0 5 25 0 -60 -40 -20 30 20 40 60 80 100 120 140 160 Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 10 000 TJ = 150 °C 10 Ciss 1000 Coss ġ ġ Crss 10 5 ġ VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 100 ġ 1 0 0 5 10 15 20 25 30 0 VDS, Drain-to-Source Voltage (V) 200 100 500 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 VGS, Gate-to-Source Voltage (V) 24 TJ = 25 °C 15 TJ = 150 °C 10 400 300 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics ID, Drain-to-Source Current (A) 0 TJ, Junction Temperature (°C) 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 15 20 VDS, Drain-to-Source Voltage (V) TOP 20 15 Capacitance (pF) ID, Drain-to-Source Current (A) 25 10 VGS = 10 V 5 VDS = 32 V VDS = 520 V VDS = 325 V VDS = 130 V 20 16 12 8 4 0 0 0 5 10 15 20 25 0 10 20 30 40 50 VGS, Gate-to-Source Voltage (V) Qg, Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-1094-Rev. A, 06-Jun-16 Document Number: 91844 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA6N65E www.vishay.com Vishay Siliconix 8 TJ = 150 °C ID, Drain Current (A) ISD, Reverse Drain Current (A) 100 TJ = 25 °C 10 1 6 4 2 VGS = 0 V 0 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 25 1.6 VSD, Source-Drain Voltage (V) ID, Drain Current (A) Limited Sby RD (on)* 1 ms 0.1 0.01 1 10 ms 800 775 750 725 700 675 BVDSS Limited 650 -60 -40 -20 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 8 - Maximum Safe Operating Area Normalized Effective Transient Thermal Impedance 150 825 100 μs TC = 25 °C TJ = 150 °C Single Pulse 125 850 IDM = Limited 10 1 100 Fig. 9 - Maximum Drain Current vs. Case Temperature VDS, Drain-to-Source Breakdown Voltage (V) Operation in this Area Limited by RDS(on) 75 TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage 100 50 Fig. 10 - Temperature vs. Drain-to-Source Voltage 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Time (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case S16-1094-Rev. A, 06-Jun-16 Document Number: 91844 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA6N65E www.vishay.com Vishay Siliconix RD VDS QG 10 V VGS D.U.T. RG QGS + - VDD QGD VG 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Charge Fig. 12 - Switching Time Test Circuit Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. VDS 90 % 50 kΩ 12 V 0.2 µF 0.3 µF + 10 % VGS D.U.T. td(on) td(off) tf tr - VDS VGS 3 mA Fig. 13 - Switching Time Waveforms IG ID Current sampling resistors L Vary tp to obtain required IAS Fig. 17 - Gate Charge Test Circuit VDS D.U.T RG + - IAS V DD 10 V 0.01 Ω tp Fig. 14 - Unclamped Inductive Test Circuit VDS tp VDD VDS IAS Fig. 15 - Unclamped Inductive Waveforms S16-1094-Rev. A, 06-Jun-16 Document Number: 91844 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHA6N65E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91844. S16-1094-Rev. A, 06-Jun-16 Document Number: 91844 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000