Si4172DY Datasheet

Si4172DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.012 at VGS = 10 V
15
0.015 at VGS = 4.5 V
13
VDS (V)
30
Qg (Typ.)
6.8 nC
• Halogen-free
• TrenchFET® Power MOSFET
• Optimized for High-Side Synchronous
Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
SO-8
D
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4172DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
30
± 20
15
12
ID
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
11b, c
9b, c
50
3.8
A
2.1b, c
22
24
4.5
2.8
mJ
2.5b, c
1.6b, c
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
22
Maximum
50
28
Unit
°C/W
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
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1
Si4172DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
28
mV/°C
-6
1.2
2.5
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
20
µA
A
VGS = 10 V, ID = 11 A
0.0097
0.0120
VGS = 4.5 V, ID = 10 A
0.0122
0.0150
VDS = 15 V, ID = 11 A
52
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
820
VDS = 15 V, VGS = 0 V, f = 1 MHz
73
VDS = 15 V, VGS = 10 V, ID = 11 A
VDS = 15 V, VGS = 5 V, ID = 11 A
tr
Rise Time
Fall Time
Turn-On Delay Time
Turn-Off Delay Time
VDD = 15 V, RL = 1.4 Ω
ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω
0.36
1.8
3.6
16
24
18
24
tf
10
20
td(on)
8
16
10
20
16
24
8
15
td(off)
VDD = 15 V, RL = 1.4 Ω
ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
2.5
12
tr
Rise Time
23
10.2
16
td(off)
Turn-Off Delay Time
15
6.8
nC
2.3
f = 1 MHz
td(on)
Turn-On Delay Time
pF
195
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
25
ISM
VSD
50
IS = 9 A
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
15
30
ns
Body Diode Reverse Recovery Charge
Qrr
6
12
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C
8
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69000
S-82665-Rev. A, 03-Nov-08
Si4172DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
5
VGS = 10 thru 4 V
4
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
VGS = 3 V
10
TC = - 55 °C
3
2
TC = 25 °C
1
TC = 125 °C
0
0
2
4
6
8
0
0.0
10
0.5
VDS - Drain-to-Source Voltage (V)
1.0
2.5
3.0
Transfer Characteristics
1200
0.015
VGS = 4.5 V
0.013
900
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.011
VGS = 10 V
0.009
Ciss
600
300
Coss
0.007
Crss
0
0.005
0
10
20
30
40
0
50
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
10
ID = 11 A
ID = 11 A
8
VDS = 15 V
6
VDS = 24 V
4
1.5
VGS = 10 V
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
1.2
VGS = 4.5 V
0.9
2
0
0
4
8
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
16
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4172DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
100
0.025
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.0
0.020
TJ = 125 °C
0.015
0.010
TJ = 25 °C
0.005
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.2
50
2.0
40
Power (W)
VGS(th) (V)
1.8
ID = 250 µA
1.6
30
20
1.4
10
1.2
1.0
- 50
- 25
0
25
50
75
100
125
0
10- 3
150
10- 2
10- 1
TJ - Temperature (°C)
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
100 µA
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69000
S-82665-Rev. A, 03-Nov-08
Si4172DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18
I D - Drain Current (A)
15
12
9
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
6
2.0
5
1.5
Power (W)
Power (W)
4
3
1.0
2
0.5
1
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
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Si4172DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69000.
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Document Number: 69000
S-82665-Rev. A, 03-Nov-08
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Revision: 02-Oct-12
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Document Number: 91000