Si4684DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) (Ω) ID (A) 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4684DY-T1-E3 (Lead (Pb)-free) Si4684DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Limit 30 ± 12 16 12.9 12b, c 9.5b, c 50 4.0 2.3b, c 20 20 4.45 2.85 2.50b, c 1.6b, c - 55 to 150 ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 36 50 Maximum Junction-to-Foot (Drain) Steady State RthJF 22 28 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. Document Number: 73324 S11-0209-Rev. D, 14-Feb-11 www.vishay.com 1 Si4684DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS= 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IDSS On-State Drain Currenta ID(on) Forward Transconductancea 0.6 gfs 1.5 1.1 VDS = 0 V, VGS = ± 12 V ± 100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V RDS(on) mV/°C 4.5 VDS = VGS, ID = 5 mA IGSS Zero Gate Voltage Drain Current Drain-Source On-State Resistancea ID = 250 µA VDS = VGS, ID = 250 µA V 30 30 V nA µA A VGS = 10 V, ID = 16 A 0.0078 0.0094 VGS = 4.5 V, ID = 9.5 A 0.0092 0.0115 VDS = 15 V, ID = 16 A 45 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2080 VDS = 15 V, VGS = 0 V, f = 1 MHz 340 pF 135 VDS = 15 V, VGS = 10 V, ID = 11 A VDS = 15 V, VGS = 4.5 V, ID = 11 A 30 45 14 21 3 nC 2.8 f = 1 MHz td(on) VDD = 15 V, RL = 1.87 Ω ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 Ω tr 0.2 0.55 0.9 15 25 60 100 28 45 tf 9 15 td(on) 12 20 12 20 td(off) VDD = 15 V, RL = 1.87 Ω ID ≅ 8 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 45 70 11 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 4 50 IS = 2.3 A IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.70 1.1 V 30 45 ns 26 40 nC 16 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73324 S11-0209-Rev. D, 14-Feb-11 Si4684DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.2 50 VGS = 10 V thru 3 V 1.0 I D - Drain Current (A) I D - Drain Current (A) 40 30 2V 20 0.8 0.6 0.4 TC = 125 °C 10 0.2 - 55 °C 25 °C 0 0.0 0.5 1.0 1.5 0.0 0.0 2.0 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 2500 Ciss 0.011 0.010 C - Capacitance (pF) 2000 VGS = 4.5 V 0.009 VGS = 10 V 0.008 1500 1000 Coss 500 0.007 Crss 0.006 0 0 5 10 15 20 25 30 35 40 0 5 I D - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 12 A ID = 11 A 1.6 8 6 VDS = 20 V VDS = 10 V 4 VDS = 15 V 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.0 VDS - Drain-to-Source Voltage (V) 0.012 R DS(on) - On-Resistance (m ) 0.5 VGS = 4.5 V 1.2 1.0 0.8 0 0 4 8 12 16 20 24 28 32 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73324 S11-0209-Rev. D, 14-Feb-11 150 www.vishay.com 3 Si4684DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.05 R DS(on) - Drain-to-Source On-Resistance (Ω) 40 10 I S - Source Current (A) TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.04 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.00 0.001 0 0.2 0.4 0.6 0.8 1.0 0 1.2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 160 0.0 120 ID = 5 mA - 0.2 - 0.4 - 25 0 25 50 75 100 10 80 40 ID = 250 µA - 0.6 - 50 2 Source-Drain Diode Forward Voltage Power (W) VGS(th) Variance (V) ID = 12 A 125 150 0 0.001 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 I D - Drain Current (A) Limited by RDS(on)* 1 ms 10 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.1 DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73324 S11-0209-Rev. D, 14-Feb-11 Si4684DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 I C - Peak Avalanche Current (A) 100 I D - Drain Current (A) 16 12 8 Package Limited 4 0 10 1 TA = L · ID BV - V DD 0.1 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0.00001 0.0001 0.001 0.01 0.1 1 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73324 S11-0209-Rev. D, 14-Feb-11 www.vishay.com 5 Si4684DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 10 - 3 4. Surface Mounted 10 - 2 10 - 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73324. www.vishay.com 6 Document Number: 73324 S11-0209-Rev. 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