Si4630DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.0032 at VGS = 4.5 V 29 Qg (Typ) 49 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Synchronous Buck - Low Side - Notebook - Server - Workstation • Synchronous Rectifier - POL SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4630DY-T1-E3 (Lead (Pb)-free) Si4630DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current TJ, Tstg Operating Junction and Storage Temperature Range Limit 25 ± 16 40 32 Unit V 27b, c 21b, c 70 7.0 A 3.0b, c 30 45 7.8 5.0 mJ W 3.5b, c 2.2b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 www.vishay.com 1 Si4630DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C -6 1.0 2.2 V ± 100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A 30 0.0027 VGS = 4.5 V, ID = 15 A 0.0026 0.0032 VDS = 15 V, ID = 20 A 120 6670 VDS = 15 V, VGS = 0 V, f = 1 MHz 997 pF 531 VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A 107.5 161 49 73 15.7 nC 13.6 f = 1 MHz VDD = 15 V, RL = 1.5Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 1.5 2.25 37 56 122 185 71 tf 15 23 td(on) 17 26 93 140 tr Ω S 47 td(off) µA A 0.0022 td(on) td(off) V 28 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf 60 90 9 15 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 7 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 70 IS = 3 A IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.72 1.1 V 47 70 ns 50 75 nC 23 24 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 Si4630DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 1.2 VGS = 10 thru 3 V 1.0 50 I D - Drain Current (A) ID - Drain Current (A) 60 40 30 20 0.8 0.6 25 °C 0.4 0.2 10 TC = 125 °C - 55 °C 0 0.0 0.5 1.0 1.5 2.0 0.0 0.0 2.5 0.6 VDS - Drain-to-Source Voltage (V) 1.2 1.8 2.4 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0034 8500 0.0030 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) Ciss 6800 VGS = 4.5 V 0.0026 VGS = 10 V 5100 3400 0.0022 1700 0.0018 Coss Crss 0 0 10 20 30 40 50 60 0 5 ID - Drain Current (A) 10 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 ID = 20 A ID = 20 A 8 VDS = 10 V VDS = 15 V VGS = 20 V 4 2 (Normalized) 6 1.4 R DS(on) - On-Resistance VG S - Gate-to-Source Voltage (V) 15 VGS = 4.5 V 1.2 VGS = 10 V 1.0 0.8 0 0 22 44 66 88 110 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 150 www.vishay.com 3 Si4630DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100.000 R DS(on) - Drain-to-Source On-Resistance (Ω ) 0.010 I S - Source Current (A) 10.000 150 °C 1.000 0.100 25 °C 0.010 0.001 0.008 0.006 125 °C 0.004 0.002 25 °C 0.000 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 ID = 250 µA 0.2 160 Power (W) VGS(th) (V) ID = 5 mA - 0.1 - 0.4 120 80 - 0.7 - 1.0 - 50 40 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 * VGS 1 DC 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 Si4630DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 45 40 ID - Drain Current (A) 35 30 Package Limited 25 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 10 2.0 8 1.6 Power (W) Power (W) Current Derating* 6 1.2 4 0.8 2 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 www.vishay.com 5 Si4630DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73685. www.vishay.com 6 Document Number: 73685 S09-0138-Rev. C, 02-Feb-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000