IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G D G S D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V - 6.7 - 4.7 A - 27 0.29 W/°C Single Pulse Avalanche Energyb EAS 140 mJ Repetitive Avalanche Currenta IAR - 6.7 A Repetitive Avalanche Energya EAR 4.3 mJ PD 43 W dV/dt - 4.5 V/ns TJ, Tstg - 55 to + 175 Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 6.23 mH, Rg = 25 , IAS = - 6.7 A (see fig. 12). c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90118 S11-0511-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = - 250 μA - 60 - - V VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.060 - V/°C VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - - - 100 VDS = - 48 V, VGS = 0 V, TJ = 150 °C - - - 500 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = - 4.0 Ab VGS = - 10 V VDS = - 25 V, ID = - 4.0 Ab μA - - 0.50 1.4 - - S - 270 - - 170 - - 31 - - - 12 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 3.8 Gate-Drain Charge Qgd - - 5.1 Turn-On Delay Time td(on) - 11 - tr - 63 - - 10 - - 31 - - 4.5 - Rise Time Turn-Off Delay Time td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 VGS = - 10 V ID = - 6.7 A, VDS = - 48 V, see fig. 6 and 13b VDD = - 30 V, ID = - 6.7 A, Rg = 24 , RD = 4.0, see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G - 7.5 - - - - 6.7 - - - 27 - - - 5.5 - 80 160 ns - 0.096 0.19 μC S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 90118 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V 101 101 100 - 4.5 V - ID, Drain Current (A) - ID, Drain Current (A) Top 25 °C 175 °C 100 10-1 20 µs Pulse Width VDS = - 25 V 20 µs Pulse Width TC = 25 °C 10-1 10-1 100 - VDS, Drain-to-Source Voltage (V) 90118_01 4 101 100 - 4.5 V 10-1 90118_02 20 µs Pulse Width TC = 175 °C 10-1 100 101 - VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 175 ° C Document Number: 90118 S11-0511-Rev. B, 21-Mar-11 RDS(on), Drain-to-Source On Resistance (Normalized) - ID, Drain Current (A) 101 VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics Fig. 1 - Typical Output Characteristics, TC = 25 °C Top 5 - VGS, Gate-to-Source Voltage (V) 90118_03 90118_04 3.0 2.5 ID = - 6.7 A VGS = - 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 600 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 480 360 Ciss Coss 240 120 Crss 0 100 101 100 VGS = 0 V 2.0 12 8 4 0 90118_06 3 6 9 12 10 µs 100 µs 10 5 1 ms TC = 25 °C TJ = 175 °C Single Pulse Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1 15 QG, Total Gate Charge (nC) 6.0 2 2 For test circuit see figure 13 0 5.0 4.0 Operation in this area limited by RDS(on) 5 VDS = - 48 V VDS = - 30 V 3.0 - VSD, Source-to-Drain Voltage (V) 102 ID = - 6.7 A 16 25 °C Fig. 7 - Typical Source-Drain Diode Forward Voltage - ID, Drain Current (A) - VGS, Gate-to-Source Voltage (V) 175 °C 90118_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 101 10-1 1.0 - VDS, Drain-to-Source Voltage (V) 90118_05 - ISD, Reverse Drain Current (A) Vishay Siliconix 1 90118_08 2 5 10 10 ms 2 5 102 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 90118 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix RD VDS VGS - ID, Drain Current (A) D.U.T. RG 7.5 +VDD - 10 V 6.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 4.5 Fig. 10a - Switching Time Test Circuit 3.0 td(on) 1.5 td(off) tf tr VGS 10 % 0.0 25 50 75 100 125 150 175 TC, Case Temperature (°C) 90118_09 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 D = 0.50 1 0.20 0.10 PDM 0.05 0.1 Single Pulse (Thermal Response) 0.02 0.01 t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 90118_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90118 S11-0511-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix L Vary tp to obtain required IAS IAS VDS VDS D.U.T. RG + V DD VDD IAS tp - 10 V 0.01 Ω tp VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 500 ID - 2.7 A - 4.7 A Bottom - 6.7 A Top 400 300 200 100 0 VDD = - 25 V 25 90118_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 90118 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z10, SiHF9Z10 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90188. Document Number: 90118 S11-0511-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000