PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response (typical cut-off frequency 0.9 GHz at M=10). Features Applications l Active area: φ0.2 mm l Low voltage operation l Low capacitance l High sensitivity l Low dark current l Distance measurement l Spatial light transmission l OTDR l Low-light-level detection ■ General ratings Param eter Active area Sym bol - Value φ0.2 Unit mm Param eter Forward current Reverse current Operating tem perature Storage temperature Sym bol IF IR Topr Tstg Value 2 2 -40 to +85 -55 to +125 Unit mA mA °C °C Param eter Spectral response range Peak sensitivity wavelength Photo sensitivity Breakdown voltage Tem perature coefficient of V BR Dark current Cut-off frequency Sym bol λ λp S V BR Γ ID fc ■ Absolute maxim um ratings ■ Electrical and optical characteristics (Ta=25 °C) Term inal capacitance Condition λ=1.55 µm , M=1 I D =100 µA -40 to +85 °C V R =V BR × 0.9 M=10 V R =V BR × 0.9 f=1 MHz Ct ■ Spectral response Min. 0.8 40 0.6 Typ. 0.95 to 1.7 1.55 0.9 0.11 150 0.9 Max. 60 0.16 200 - Unit µm µm A/W V V/°C nA GHz - 1.5 2 pF ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C, M=1) 1.0 (Typ. Ta=25 ˚C) 1 mA 100 µA Photocurrent Dark current, photocurrent Photo sensitivity (A/W) 0.8 0.6 0.4 0.2 10 µA 1 µA 100 nA 10 nA Dark current 1 nA 100 pA 10 pA 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Wavelength (µm) 1 pA 0 10 20 30 40 50 Reverse voltage (V) KAPDB0120EA KAPDB0121EA 1 InGaAs APD ■ Dimensional outline (unit: mm) ■ Terminal capacitance vs. reverse voltage 5.4 ± 0.2 (Typ. Ta=25 ˚C) 12 3.7 ± 0.2 10 2.7 ± 0.2 4.7 ± 0.1 Window 3.0 ± 0.1 8 Photosensitive surface 13 Min. Terminal capacitance (pF) G8931-20 6 0.45 Lead 4 2.5 ± 0.2 2 0 0 10 20 30 40 50 Reverse voltage (V) KAPDB0122EA Case KAPDA0034EA ■ Peripheral circuit example of APD Bias supply voltage (for temperature compensation) Current limitting resistance 0.1 µF Min. (as close to apd as possible) Excessive voltage protective circuit APD + High-speed op amp Readout circuit KAPDC0005EC Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2009 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KAPD1019E03 Jan. 2009 DN