IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low gate charge Qg results in simple drive requirement Available • Improved gate, avalanche and dynamic dV/dt ruggedness Available • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 600 RDS(on) () VGS = 10 V Qg max. (nC) 0.75 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Single Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. D TO-220 FULLPAK G G D S APPLICATIONS • • • • S N-Channel MOSFET Switch mode power supply (SMPS) Uninterruptible power supply High speed power switching High voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) TYPICAL SMPS TOPOLOGIES • Single transistor forward • Active clamped forward ORDERING INFORMATION Package TO-220 FULLPAK IRFIB6N60APbF Lead (Pb)-free SiHFIB6N60A-E3 IRFIB6N60A SnPb SiHFIB6N60A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 VGS at 10 V Continuous Drain Current Pulsed Drain TC = 25 °C TC = 100 °C Current a ID IDM Linear Derating Factor UNIT V 5.5 3.5 37 0.48 W/°C mJ Single Pulse Avalanche Energy b EAS 290 Repetitive Avalanche Current a IAR 9.2 A Repetitive Avalanche Energy a EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) Mounting Torque d for 10 s 6-32 or M3 screw PD 60 W dV/dt 5.0 V/ns TJ, Tstg -55 to +150 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 , IAS = 9.2 A (see fig. 12). c. ISD 9.2 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S16-0763-Rev. D, 02-May-16 Document Number: 91175 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 2.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA d - 660 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance μA - - 0.75 gfs VDS = 25 V, ID = 5.5 A 5.5 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1400 - - 180 - - 7.1 - VDS = 1.0 V, f = 1.0 MHz - 1957 - VDS = 480 V, f = 1.0 MHz - 49 - - 96 - - - 49 - - 13 - - 20 - 13 - - 25 - - 30 - - 22 - 0.5 - 3.2 - - 5.5 - - 37 RDS(on) ID = 3.3 A b VGS = 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss VGS = 0 V Coss eff. Effective Output Capacitance Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Gate Input Resistance Rg VDS = 0 V to 480 VGS = 10 V Vc ID = 9.2 A, VDS = 400 V, see fig. 6 and 13 b VDD = 300 V, ID = 9.2 A, RG = 9.1, RD = 35.5, see fig. 10 b f = 1 MHz, open drain pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current a Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 9.2 A, VGS = 0 V b TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b - - 1.5 V - 530 800 ns - 3.0 4.4 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. d. t = 60 s, f = 60 Hz. S16-0763-Rev. D, 02-May-16 Document Number: 91175 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 TJ = 25 ° C 1 0.1 4.0 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 10 4.7V 20µs PULSE WIDTH TJ = 150 °C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics S16-0763-Rev. D, 02-May-16 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 1 5.0 6.0 7.0 8.0 9.0 10.0 Fig. 3 - Typical Transfer Characteristics TOP 1 V DS = 50V 20µs PULSE WIDTH VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 TJ = 150 ° C ID = 9.2A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91175 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com 2400 100 ISD , Reverse Drain Current (A) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 2000 C, Capacitance (pF) Vishay Siliconix iss 1600 oss 1200 800 rss 400 0 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.2 A 1 10 100 1000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1.0 1.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 ID = 9.2A OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 480V VDS = 300V VDS = 120V 16 100 I D , Drain Current (A) VGS , Gate-to-Source Voltage (V) 0.7 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) 20 V GS = 0 V 0.5 12 8 10us 10 100us 1ms 1 10ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-0763-Rev. D, 02-May-16 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91175 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix RD VDS 6.0 VGS ID , Drain Current (A) D.U.T. RG 5.0 + - VDD 10 V 4.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 90 % 1.0 0.0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( °C) t d(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr t d(off) t f Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 t1 0.02 t2 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0763-Rev. D, 02-May-16 Document Number: 91175 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix V DS tp 15 V Driver L VDS D.U.T. RG + A - VDD IAS 20 V tp A 0.01 Ω I AS Fig. 12b - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit 600 TOP 500 BOTTOM ID 4.1A 5.8A 9.2A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 50 kΩ 12 V 0.2 µF 0.3 µF 10 V QGS + Q GD D.U.T. VG - VDS VGS 3 mA Charge Fig. 13a - Basic Gate Charge Waveform S16-0763-Rev. D, 02-May-16 IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91175 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91175. S16-0763-Rev. D, 02-May-16 Document Number: 91175 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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