INTERSIL ISL6753

ISL6753
®
Data Sheet
April 4, 2006
FN9182.2
ZVS Full-Bridge PWM Controller
Features
The ISL6753 is a high-performance, low-pin-count
alternative, zero-voltage switching (ZVS) full-bridge PWM
controller. Like the ISL6551, it achieves ZVS operation by
driving the upper bridge FETs at a fixed 50% duty cycle while
the lower bridge FETS are trailing-edge modulated with
adjustable resonant switching delays. Compared to the more
familiar phase-shifted control method, this algorithm offers
equivalent efficiency and improved overcurrent and lightload performance with less complexity in a lower pin count
package.
• Adjustable Resonant Delay for ZVS Operation
This advanced BiCMOS design features low operating
current, adjustable oscillator frequency up to 2MHz,
adjustable soft-start, internal over temperature protection,
precision deadtime and resonant delay control, and short
propagation delays. Additionally, Multi-Pulse Suppression
ensures alternating output pulses at low duty cycles where
pulse skipping may occur.
PART
MARKING
ISL6753AAZA ISL6753AAZ
(See Note)
TEMP.
RANGE (°C) PACKAGE
-40 to 105
• 3% Current Limit Threshold
• 175µA Startup Current
• Supply UVLO
• Adjustable Deadtime Control
• Adjustable Soft-Start
• Adjustable Oscillator Frequency Up to 2MHz
• Tight Tolerance Error Amplifier Reference Over Line,
Load, and Temperature
• 5MHz GBWP Error Amplifier
• Adjustable Cycle-by-Cycle Peak Current Limit
• Fast Current Sense to Output Delay
• 70ns Leading Edge Blanking
Ordering Information
PART
NUMBER
• Voltage- or Current-Mode Operation
PKG.
DWG. #
16 Ld QSOP M16.15A
(Pb-free)
• Multi-Pulse Suppression
• Buffered Oscillator Sawtooth Output
• Internal Over Temperature Protection
• Pb-Free Plus Anneal Available and ELV, WEEE,
RoHS Compliant
Add -T suffix to part number for tape and reel packaging
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
Applications
• ZVS Full-Bridge Converters
• Telecom and Datacom Power
• Wireless Base Station Power
• File Server Power
Pinout
• Industrial Power Systems
ISL6753 (QSOP)
TOP VIEW
VERR 1
16 VREF
CTBUF 2
15 SS
RTD 3
14 VDD
RESDEL 4
13 OUTLL
CT 5
12 OUTLR
FB 6
11 OUTUL
RAMP 7
10 OUTUR
CS 8
9 GND
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005, 2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
Functional Block Diagram
VDD
VDD
OUTUL
50%
VREF
OUTUR
UVLO
PWM
STEERING
LOGIC
OVERTEMPERATURE
PROTECTION
OUTLL
PWM
OUTLR
2
GND
+
VREF
-
CS
1.00V
70 nS
LEADING
EDGE
BLANKING
OVER CURRENT
COMPARATOR
RESDEL
80mV
+
RAMP
CT
RTD
PWM
COMPARATOR
OSCILLATOR
ISL6753
0.33
VREF
1 mA
VREF
VERR
CTBUF
SS
SOFTSTART
CONTROL
+
-
0.6V
FB
FN9182.2
April 4, 2006
Typical Application - High Voltage Input ZVS Full-Bridge Converter
P1
VIN+
Q1
FQB6N50
3
1
R13
10.0k
+
Q2
FQB6N50
T3
P0544
4
Q6
BSS138LT1
Q5
BSS138LT1
3
5
3
1
2
C1-C4
33uF
450V
8
CR3
SS12
R15
4.99
0805
CR4
SS12
T1
1
15, 16
2
2, 3
Ns
3
+
+
R1
4.7k
5%
2512
300 - 400
VDC
7,8
Q10
ZXTDB2M832
R2
4.7k
5%
2512
1
3
2
2
4
4
1
Ns
Q9
ZXTDB2M832
1,C
CR5
CSD10060G
P4
RETURN
CR6
CSD10060G
6, 7
9, 10
3
2
L1
PB2020.103
1,C
5,6
5,6
R3
4.7k
5%
2512
13, 14
11, 12
Np
7,8
C13
0.1uF
R18
10
5%
2512
R16
10.0k
2
R14
4.99
0805
+
C17
100pF
250V
COG
6
+
C18
1uF
100V
1210
C19
1uF
100V
1210
Q4
FQB6N50
7,8
3
5,6
P2
VIN-
1
C12
1.0uF
4
R28
10.0k
2512
C21
470uF
63V
P3
+ Vout
(48V@10A)
7,8
1
2
+
C20
470uF
63V
R17
10.0
2
4
3
Q8
ZXTDB2M832
Q3
FQB6N50
C22
4700pF
250VAC
SAFETY
R19
10
2512
C16
100pF
250V
COG
C23
4700pF
250VAC
SAFETY
5,6
Q7
ZXTDB2M832
8
3
3
U1
ISL6753
1
T2
P8205
R11
3.65k
1
VERR
SS
CTBUF
CR1
BAV70
RTD
R8
45.3k
R5
100k
1206
R4
4.7k
5%
2512
RESDEL
OUTLL
CT
OUTLR
FB1
OUTUL
RAMP
OUTUR
R22
3.74k
1206
4
GND
1
2
3
R12
20.0k
R24
100k
2
CR2
BAT54C
3
3
1
BIAS
1
R20
499
C14
4.7nF
1
R26
10.0k
0805
CR7
BAT54
3
U2
PS2701-1P
C15
220pF
R9
499
2
Q11
MJD50
R25
37.4k
0805
R21
3.74k
1206
VDD
CS
R6
5.11k
R27
10.0k
0805
VREF
2
3
3
C5
0.1uF
VR1
BZX84-C12
1
R7A, B
18.7
0805
R29
20.0k
C6
180pF
5% COG
R10
10.0k
R30
20.0k
VR2
BZX84-C6V8
1
U3
1
2
3
R23
1.10k
C7
47pF
C8
1.0nF
C9
0.47uF
C10
0.1uF
C11
0.1uF
ISL6753
2
7
FN9182.2
April 4, 2006
ISL6753
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . GND - 0.3V to +20.0V
OUTxxx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to VDD
Signal Pins . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to VREF + 0.3V
VREF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 6.0V
Peak GATE Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1A
ESD Classification
Human Body Model (Per MIL-STD-883 Method 3015.7) . . .3000V
Charged Device Model (Per EOS/ESD DS5.3, 4/14/93) . . .1000V
Thermal Resistance (Typical)
θJA (°C/W)
16 Lead QSOP (Note 1). . . . . . . . . . . . . . . . . . . . . .
95
Maximum Junction Temperature . . . . . . . . . . . . . . . . -55°C to 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(QSOP- Lead Tips Only)
Operating Conditions
Temperature Range
ISL6753AAxx . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 105°C
Supply Voltage Range (Typical). . . . . . . . . . . . . . . . . . . . 9-16 VDC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. All voltages are with respect to GND.
Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application
schematic. 9V < VDD < 20V, RTD = 10.0kΩ, CT = 470pF, TA = -40°C to 105°C (Note 3), Typical values are at
TA = 25°C
Electrical Specifications
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
-
20
-
SUPPLY VOLTAGE
Supply Voltage
Start-Up Current, IDD
VDD = 5.0V
-
175
400
µA
Operating Current, IDD
RLOAD, COUT = 0
-
11.0
15.5
mA
UVLO START Threshold
8.00
8.75
9.00
V
UVLO STOP Threshold
6.50
7.00
7.50
V
-
1.75
-
V
4.850
5.000
5.150
V
-
3
-
mV
-10
-
-
mA
5
-
-
mA
VREF = 4.85V
-15
-
-100
mA
Current Limit Threshold
VERR = VREF
0.97
1.00
1.03
V
CS to OUT Delay
Excl. LEB (Note 4)
-
35
50
ns
Leading Edge Blanking (LEB) Duration
(Note 4)
50
70
100
ns
CS to OUT Delay + LEB
TA = 25°C
-
-
130
ns
CS Sink Current Device Impedance
VCS = 1.1V
-
-
20
Ω
Input Bias Current
VCS = 0.3V
-1.0
-
1.0
µA
-
-
20
Ω
65
80
95
mV
Hysteresis
REFERENCE VOLTAGE
Overall Accuracy
IVREF = 0 - -10mA
Long Term Stability
TA = 125°C, 1000 hours (Note 4)
Operational Current (source)
Operational Current (sink)
Current Limit
CURRENT SENSE
RAMP
RAMP Sink Current Device Impedance
VRAMP = 1.1V
RAMP to PWM Comparator Offset
TA = 25°C
4
FN9182.2
April 4, 2006
ISL6753
Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application
schematic. 9V < VDD < 20V, RTD = 10.0kΩ, CT = 470pF, TA = -40°C to 105°C (Note 3), Typical values are at
TA = 25°C (Continued)
Electrical Specifications
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Bias Current
VRAMP = 0.3V
-5.0
-
-2.0
µA
Clamp Voltage
(Note 4)
6.5
-
8.0
V
PULSE WIDTH MODULATOR
Minimum Duty Cycle
VERR < 0.6V
-
-
0
%
Maximum Duty Cycle (per half-cycle)
VERR = 4.20V, VRAMP = 0V,
VCS = 0V (Note 5)
-
94
-
%
RTD = 2.00kΩ, CT = 220pF
-
97
-
%
RTD = 2.00kΩ, CT = 470pF
-
99
-
%
0.85
-
1.20
V
0.7
0.8
0.9
V
0.31
0.33
0.35
V/V
(Note 4)
0
-
VSS
V
Input Common Mode (CM) Range
(Note 4)
0
-
VREF
V
GBWP
(Note 4)
5
-
-
MHz
VERR VOL
ILOAD = 2mA
-
-
0.4
V
VERR VOH
ILOAD = 0mA
4.20
-
-
V
VERR Pull-Up Current Source
VERR = 2.5V
0.8
1.0
1.3
mA
EA Reference
TA = 25°C
0.594
0.600
0.606
V
0.590
0.600
0.612
V
165
183
201
kHz
-10
-
+10
%
Zero Duty Cycle VERR Voltage
VERR to PWM Comparator Input Offset
TA = 25°C
VERR to PWM Comparator Input Gain
Common Mode (CM) Input Range
ERROR AMPLIFIER
EA Reference + EA Input Offset Voltage
OSCILLATOR
Frequency Accuracy, Overall
(Note 4)
Frequency Variation with VDD
TA = 25°C, (F20V- - F10V)/F10V
-
0.3
1.7
%
Temperature Stability
VDD = 10V, |F-40°C - F0°C|/F0°C
-
4.5
-
%
|F0°C - F105°C|/F25°C
(Note 4)
-
1.5
-
%
-193
-200
-207
µA
19
20
23
µA/µA
TA = 25°C
Charge Current
Discharge Current Gain
CT Valley Voltage
Static Threshold
0.75
0.80
0.88
V
CT Peak Voltage
Static Threshold
2.75
2.80
2.88
V
CT Pk-Pk Voltage
Static Value
1.92
2.00
2.05
V
1.97
2.00
2.03
V
0
-
2
V
RTD Voltage
RESDEL Voltage Range
CTBUF Gain (VCTBUFp-p/VCTp-p)
VCT = 0.8V, 2.6V
1.95
2.0
2.05
V/V
CTBUF Offset from GND
VCT = 0.8V
0.34
0.40
0.44
V
CTBUF VOH
∆V(ILOAD = 0mA, ILOAD = -2mA),
VCT = 2.6V
-
-
0.10
V
5
FN9182.2
April 4, 2006
ISL6753
Recommended operating conditions unless otherwise noted. Refer to Block Diagram and Typical Application
schematic. 9V < VDD < 20V, RTD = 10.0kΩ, CT = 470pF, TA = -40°C to 105°C (Note 3), Typical values are at
TA = 25°C (Continued)
Electrical Specifications
PARAMETER
TEST CONDITIONS
∆V(ILOAD = 2mA, ILOAD = 0mA),
VCT = 0.8V
CTBUF VOL
MIN
TYP
MAX
UNITS
-
-
0.10
V
-60
-70
-80
µA
4.410
4.500
4.590
V
10
-
-
mA
0.23
0.27
0.33
V
SOFT-START
Charging Current
SS = 3V
SS Clamp Voltage
SS Discharge Current
SS = 2V
Reset Threshold Voltage
TA = 25°C
OUTPUTS
High Level Output Voltage (VOH)
IOUT = -10mA, VDD - VOH
-
0.5
1.0
V
Low Level Output Voltage (VOL)
IOUT = 10mA, VOL - GND
-
0.5
1.0
V
Rise Time
COUT = 220pF, VDD = 15V(Note 4)
-
110
200
ns
Fall Time
COUT = 220pF, VDD = 15V(Note 4)
-
90
150
ns
UVLO Output Voltage Clamp
VDD = 7V, ILOAD = 1mA (Note 6)
-
-
1.25
V
THERMAL PROTECTION
Thermal Shutdown
(Note 4)
130
140
150
°C
Thermal Shutdown Clear
(Note 4)
115
125
135
°C
Hysteresis, Internal Protection
(Note 4)
-
15
-
°C
NOTES:
3. Specifications at -40°C and 105°C are guaranteed by 25°C test with margin limits.
4. Guaranteed by design, not 100% tested in production.
5. This is the maximum duty cycle achievable using the specified values of RTD and CT. Larger or smaller maximum duty cycles may be obtained
using other values for these components. See Equations 1 - 5.
6. Adjust VDD below the UVLO stop threshold prior to setting at 7V.
6
FN9182.2
April 4, 2006
ISL6753
Typical Performance Curves
25
CT Discharge Current Gain
1.01
1
0.99
0.98
CT =
1000pF
680pF
470pF
330pF
220pF
100pF
4
1 10
Deadtime - TD (nS)
23
22
21
20
19
18
FIGURE 1. REFERENCE VOLTAGE vs TEMPERATURE
3
1 10
100
10
24
40 25 10 5 20 35 50 65 80 95 110
Temperature (C)
0
200
400
600
800
RTD Current (uA)
1000
FIGURE 2. CT DISCHARGE CURRENT GAIN vs RTD CURRENT
3
1 10
Frequency (kHz)
Normalized Vref
1.02
100
RTD=
10k
50k
100k
0
10
20
30
40 50 60
RTD (kohms)
70
80
90 100
FIGURE 3. DEADTIME (DT) vs CAPACITANCE
Pin Descriptions
VDD - VDD is the power connection for the IC. To optimize
noise immunity, bypass VDD to GND with a ceramic
capacitor as close to the VDD and GND pins as possible.
Supply voltage under-voltage lock-out (UVLO) start and stop
thresholds track each other resulting in relatively constant
hysteresis.
GND - Signal and power ground connections for this device.
Due to high peak currents and high frequency operation, a
low impedance layout is necessary. Ground planes and
short traces are highly recommended.
VREF - The 5.00V reference voltage output having 3%
tolerance over line, load and operating temperature. Bypass
to GND with a 0.1µF to 2.2µF low ESR capacitor.
CT - The oscillator timing capacitor is connected between
this pin and GND. It is charged through an internal 200µA
current source and discharged with a user adjustable current
source controlled by RTD.
7
10
0.1
1
CT (nF)
10
FIGURE 4. CAPACITANCE vs FREQUENCY
RTD - This is the oscillator timing capacitor discharge
current control pin. The current flowing in a resistor
connected between this pin and GND determines the
magnitude of the current that discharges CT. The CT
discharge current is nominally 20x the resistor current. The
PWM deadtime is determined by the timing capacitor
discharge duration. The voltage at RTD is nominally 2.00V.
CS - This is the input to the overcurrent comparator. The
overcurrent comparator threshold is set at 1.00V nominal.
The CS pin is shorted to GND at the termination of either
PWM output.
Depending on the current sensing source impedance, a
series input resistor may be required due to the delay
between the internal clock and the external power switch.
This delay may result in CS being discharged prior to the
power switching device being turned off.
RAMP - This is the input for the sawtooth waveform for the
PWM comparator. The RAMP pin is shorted to GND at the
termination of the PWM signal. A sawtooth voltage
FN9182.2
April 4, 2006
ISL6753
waveform is required at this input. For current-mode control
this pin is connected to CS and the current loop feedback
signal is applied to both inputs. For voltage-mode control,
the oscillator sawtooth waveform may be buffered and used
to generate an appropriate signal, RAMP may be connected
to the input voltage through a RC network for voltage feed
forward control, or RAMP may be connected to VREF
through a RC network to produce the desired sawtooth
waveform.
OUTUL and OUTUR - These outputs control the upper
bridge FETs and operate at a fixed 50% duty cycle in
alternate sequence. OUTUL controls the upper left FET and
OUTUR controls the upper right FET. The left and right
designation may be switched as long as they are switched in
conjunction with the lower FET outputs, OUTLL and OUTLR.
RESDEL - Sets the resonant delay period between the
toggle of the upper FETs and the turn on of either of the
lower FETs. The voltage applied to RESDEL determines
when the upper FETs switch relative to a lower FET turning
on. Varying the control voltage from 0 to 2.00V increases the
resonant delay duration from 0 to 100% of the deadtime. The
control voltage divided by 2 represents the percent of the
deadtime equal to the resonant delay. In practice the
maximum resonant delay must be set lower than 2.00V to
ensure that the lower FETs, at maximum duty cycle, are OFF
prior to the switching of the upper FETs.
OUTLL and OUTLR - These outputs control the lower
bridge FETs, are pulse width modulated, and operate in
alternate sequence. OUTLL controls the lower left FET and
OUTLR controls the lower right FET. The left and right
designation may be switched as long as they are switched in
conjunction with the upper FET outputs, OUTUL and
OUTUR.
VERR - The control voltage input to the inverting input of the
PWM comparator. The output of an external error amplifier
(EA) is applied to this input for closed loop regulation. VERR
has a nominal 1mA pull-up current source.
FB - FB is the inverting input to the error amplifier (EA).
SS - Connect the soft-start timing capacitor between this pin
and GND to control the duration of soft-start. The value of
the capacitor determines the rate of increase of the duty
cycle during start-up.
SS may also be used to inhibit the outputs by grounding
through a small transistor in an open collector/drain
configuration.
CTBUF - CTBUF is the buffered output of the sawtooth
oscillator waveform present on CT and is capable of
sourcing 2mA. It is offset from ground by 0.40V and has a
nominal valley-to-peak gain of 2. It may be used for slope
compensation.
8
Functional Description
Features
The ISL6753 PWM is an excellent choice for low cost ZVS
full-bridge applications employing conventional output
rectification. If synchronous rectification is required, please
consider the ISL6752 or ISL6551 products.
With the ISL6753’s many protection and control features, a
highly flexible design with minimal external components is
possible. Among its many features are support for both
current- and voltage-mode control, a very accurate
overcurrent limit threshold, thermal protection, a buffered
sawtooth oscillator output suitable for slope compensation,
voltage controlled resonant delay, and adjustable frequency
with precise deadtime control.
Oscillator
The ISL6753 has an oscillator with a programmable
frequency range to 2MHz, and can be programmed with an
external resistor and capacitor.
The switching period is the sum of the timing capacitor
charge and discharge durations. The charge duration is
determined by CT and a fixed 200µA internal current source.
The discharge duration is determined by RTD and CT.
3
T C ≈ 11.5 ⋅ 10 ⋅ CT
(EQ. 1)
S
T D ≈ ( 0.06 ⋅ RTD ⋅ CT ) + 50 ⋅ 10
1
T SW = T C + T D = ----------F SW
S
–9
S
(EQ. 2)
(EQ. 3)
where TC and TD are the charge and discharge times,
respectively, TSW is the oscillator period, and FSW is the
oscillator frequency. One output switching cycle requires two
oscillator cycles. The actual times will be slightly longer than
calculated due to internal propagation delays of
approximately 10ns/transition. This delay adds directly to the
switching duration, but also causes overshoot of the timing
capacitor peak and valley voltage thresholds, effectively
increasing the peak-to-peak voltage on the timing capacitor.
Additionally, if very small discharge currents are used, there
will be increased error due to the input impedance at the CT
pin.
The maximum duty cycle, D, and percent deadtime, DT, can
be calculated from:
TC
D = ----------T SW
(EQ. 4)
DT = 1 – D
(EQ. 5)
FN9182.2
April 4, 2006
ISL6753
Soft-Start Operation
Voltage Feed Forward Operation
The ISL6753 features a soft-start using an external capacitor in
conjunction with an internal current source. Soft-start reduces
component stresses and surge currents during start-up.
Voltage feed forward is a technique used to regulate the
output voltage for changes in input voltage without the
intervention of the control loop. Voltage feed forward is often
implemented in voltage-mode control loops, but is redundant
and unnecessary in peak current-mode control loops.
Upon start-up, the soft-start circuitry limits the error voltage
input (VERR) to a value equal to the soft-start voltage. The
output pulse width increases as the soft-start capacitor
voltage increases. This has the effect of increasing the duty
cycle from zero to the regulation pulse width during the softstart period. When the soft-start voltage exceeds the error
voltage, soft-start is completed. Soft-start occurs during
start-up and after recovery from a fault condition. The softstart charging period may be calculated as follows:
t = 64.3 ⋅ C
(EQ. 6)
ms
Voltage feed forward operates by modulating the sawtooth
ramp in direct proportion to the input voltage. Figure 5
demonstrates the concept.
VIN
ERROR VOLTAGE
RAMP
where t is the charging period in ms and C is the value of the
soft-start capacitor in µF.
The soft-start voltage is clamped to 4.50V with a tolerance of
2%. It is suitable for use as a “soft-started” reference
provided the current draw is kept well below the 70µA
charging current.
The outputs may be inhibited by using the SS pin as a
disable input. Pulling SS below 0.25V forces all outputs low.
An open collector/drain configuration may be used to couple
the disable signal into the SS pin.
Gate Drive
The ISL6753 outputs are capable of sourcing and sinking
10mA (at rated VOH, VOL) and are intended to be used in
conjunction with integrated FET drivers or discrete bipolar
totem pole drivers. The typical on resistance of the outputs is
50Ω.
Overcurrent Operation
The cycle-by-cycle peak current limit results in pulse-by-pulse
duty cycle reduction when the current feedback signal
exceeds 1.0V. When the peak current exceeds the threshold,
the active output pulse is immediately terminated. This results
in a decrease in output voltage as the load current increases
beyond the current limit threshold. The ISL6753 operates
continuously in an overcurrent condition without shutdown.
If voltage-mode control is used in a bridge topology, it should
be noted that peak current limit results in inherently unstable
operation. The DC blocking capacitors used in voltage-mode
bridge topologies become unbalanced, as does the flux in
the transformer core. A latching overcurrent shutdown
method using external components is recommended.
CT
OUTLL, LR
FIGURE 5. VOLTAGE FEED FORWARD BEHAVIOR
Input voltage feed forward may be implemented using the
RAMP input. An RC network connected between the input
voltage and ground, as shown in Figure 7, generates a
voltage ramp whose charging rate varies with the amplitude
of the source voltage. At the termination of the active output
pulse RAMP is discharged to ground so that a repetitive
sawtooth waveform is created. The RAMP waveform is
compared to the VERR voltage to determine duty cycle. The
selection of the RC components depends upon the desired
input voltage operating range and the frequency of the
oscillator. In typical applications the RC components are
selected so that the ramp amplitude reaches 1.0V at
minimum input voltage within the duration of one half-cycle.
VIN
1
16
2
15
3
R3
4
14
ISL6753
13
5
12
6
11
7 RAMP
10
8
GND 9
C7
The propagation delay from CS exceeding the current limit
threshold to the termination of the output pulse is increased
by the leading edge blanking (LEB) interval. The effective
delay is the sum of the two delays and is nominally 105ns.
FIGURE 6. VOLTAGE FEED FORWARD CONTROL
9
FN9182.2
April 4, 2006
ISL6753
The charging time of the ramp capacitor is
V RAMP ( PEAK )

t = – R3 ⋅ C7 ⋅ ln  1 – ---------------------------------------
V IN ( MIN ) 

(EQ. 7)
S
For optimum performance, the maximum value of the
capacitor should be limited to 10nF. The maximum DC
current through the resistor should be limited to 2mA
maximum. For example, if the oscillator frequency is
400kHz, the minimum input voltage is 300V, and a 4.7nF
ramp capacitor is selected, the value of the resistor can be
determined by rearranging Equation 7.
–6
– 2.5 ⋅ 10
–t
R3 = ------------------------------------------------------------------------- = -----------------------------------------------------------–9
1 
V RAMP ( PEAK )

4.7 ⋅ 10 ⋅ ln  1 – --------C7 ⋅ ln  1 – ----------------------------------------

300
V IN ( MIN ) ) 

= 159
kΩ
(EQ. 8)
where t is equal to the oscillator period minus the deadtime.
If the deadtime is short relative to the oscillator period, it can
be ignored for this calculation.
If feed forward operation is not desired, the RC network may
be connected to VREF rather than the input voltage.
Alternatively, a resistor divider from CTBUF may be used as
the sawtooth signal. Regardless, a sawtooth waveform must
be generated on RAMP as it is required for proper PWM
operation.
Slope Compensation
Peak current-mode control requires slope compensation to
improve noise immunity, particularly at lighter loads, and to
prevent current loop instability, particularly for duty cycles
greater than 50%. Slope compensation may be
accomplished by summing an external ramp with the current
feedback signal or by subtracting the external ramp from the
voltage feedback error signal. Adding the external ramp to
the current feedback signal is the more popular method.
From the small signal current-mode model [1] it can be
shown that the naturally-sampled modulator gain, Fm,
without slope compensation, is
1
Fm = ------------------SnTsw
The criteria for determining the correct amount of external
ramp can be determined by appropriately setting the
damping factor of the double-pole located at half the
oscillator frequency. The double-pole will be critically
damped if the Q-factor is set to 1, and over-damped for
Q > 1, and under-damped for Q < 1. An under-damped
condition can result in current loop instability.
1
Q = ------------------------------------------------π ( m c ( 1 – D ) – 0.5 )
(EQ. 12)
where D is the percent of on time during a half cycle. Setting
Q = 1 and solving for Se yields:
1
1
S e = S n   --- + 0.5 ------------- – 1
1–D
 π

(EQ. 13)
Since Sn and Se are the on time slopes of the current ramp
and the external ramp, respectively, they can be multiplied
by Ton to obtain the voltage change that occurs during Ton.
1
1
V e = V n   --- + 0.5 ------------- – 1
1–D
π

(EQ. 14)
where Vn is the change in the current feedback signal during
the on time and Ve is the voltage that must be added by the
external ramp.
Vn can be solved for in terms of input voltage, current
transducer components, and output inductance yielding:
T SW ⋅ V ⋅ R CS N
O
S 1
V e = ------------------------------------------ ⋅ --------  --- + D – 0.5

N CT ⋅ L O
NP  π
(EQ. 15)
V
where RCS is the current sense burden resistor, NCT is the
current transformer turns ratio, LO is the output inductance,
VO is the output voltage, and Ns and Np are the secondary
and primary turns, respectively.
The inductor current, when reflected through the isolation
transformer and the current sense transformer to obtain the
current feedback signal at the sense resistor yields:
N S ⋅ R CS 
D ⋅ T SW 
NS

V CS = ------------------------  I O + ---------------------  V IN ⋅ -------- – V O 
N P ⋅ N CT 
2L O 
NP

V
(EQ. 16)
(EQ. 9)
where Sn is the slope of the sawtooth signal and Tsw is the
duration of the half-cycle. When an external ramp is added,
the modulator gain becomes
1
1
Fm = -------------------------------------- = ---------------------------( Sn + Se )Tsw
m c SnTsw
(EQ. 10)
Since the peak current limit threshold is 1.00V, the total
current feedback signal plus the external ramp voltage must
sum to this value.
(EQ. 17)
V e + V CS = 1
Substituting Equations 15 and 16 into Equation 17 and
solving for RCS yields
where Se is slope of the external ramp and
m c = 1 + Se
------Sn
where VCS is the voltage across the current sense resistor
and IO is the output current at current limit.
(EQ. 11)
N P ⋅ N CT
1
R CS = ------------------------ ⋅ -----------------------------------------------------VO
NS
I O + -------- T SW  1
+ D-
 --π- --L
2
Ω
(EQ. 18)
O
10
FN9182.2
April 4, 2006
ISL6753
For simplicity, idealized components have been used for this
discussion, but the effect of magnetizing inductance must be
considered when determining the amount of external ramp
to add. Magnetizing inductance provides a degree of slope
compensation to the current feedback signal and reduces
the amount of external ramp required. The magnetizing
inductance adds primary current in excess of what is
reflected from the inductor current in the secondary.
V IN ⋅ DT SW
∆I P = ------------------------------Lm
(EQ. 19)
A
Assuming the designer has selected values for the RC filter
placed on the CS pin, the value of R9 required to add the
appropriate external ramp can be found by superposition.
( D ( V CTBUF – 0.4 ) + 0.4 ) ⋅ R6
V e – ∆V CS = -----------------------------------------------------------------------------R6 + R9
(EQ. 22)
V
Rearranging to solve for R9 yields
( D ( V CTBUF – 0.4 ) – V e + ∆V CS + 0.4 ) ⋅ R6
R9 = -----------------------------------------------------------------------------------------------------------------V e – ∆V CS
Ω
(EQ. 23)
where VIN is the input voltage that corresponds to the duty
cycle D and Lm is the primary magnetizing inductance. The
effect of the magnetizing current at the current sense
resistor, RCS, is
The value of RCS determined in Equation 18 must be
rescaled so that the current sense signal presented at the
CS pin is that predicted by Equation 16. The divider created
by R6 and R9 makes this necessary.
∆I P ⋅ R CS
∆V CS = ------------------------N CT
R6 + R9
R′ CS = ---------------------- ⋅ R CS
R9
(EQ. 20)
V
If ∆VCS is greater than or equal to Ve, then no additional
slope compensation is needed and RCS becomes
N CT
R CS = ------------------------------------------------------------------------------------------------------------------------------------NS 
DT SW 
NS
  V IN ⋅ DT SW
-------- ⋅  I O + ----------------- ⋅  V IN ⋅ ------- – V O  + ------------------------------NP 
2L O 
NP
Lm

(EQ. 21)
If ∆VCS is less than Ve, then Equation 18 is still valid for the
value of RCS, but the amount of slope compensation added
by the external ramp must be reduced by ∆VCS.
Adding slope compensation is accomplished in the ISL6753
using the CTBUF signal. CTBUF is an amplified
representation of the sawtooth signal that appears on the CT
pin. It is offset from ground by 0.4V and is 2x the peak-topeak amplitude of CT (0.4 - 4.4V). A typical application sums
this signal with the current sense feedback and applies the
result to the CS pin as shown in Figure 7.
VIN = 280V
VO = 12V
LO = 2.0µH
Np/Ns = 20
Lm = 2mH
IO = 55A
Oscillator Frequency, Fsw = 400kHz
Duty Cycle, D = 85.7%
NCT = 50
R6 = 499Ω
Solve for the current sense resistor, RCS, using Equation 18.
RCS = 15.1Ω.
2 CTBUF
3
Ve = 153mV
4
ISL6753
5
6
7
8 CS
R6
RCS
Example:
Determine the amount of voltage, Ve, that must be added to
the current feedback signal using Equation 15.
1
R9
(EQ. 24)
C4
Next, determine the effect of the magnetizing current from
Equation 20.
∆VCS = 91mV
Using Equation 23, solve for the summing resistor, R9, from
CTBUF to CS.
R9 = 30.1kΩ
Determine the new value of RCS, R’CS, using Equation 24.
R’CS = 15.4Ω
FIGURE 7. ADDING SLOPE COMPENSATION
11
The above discussion determines the minimum external
ramp that is required. Additional slope compensation may be
considered for design margin.
FN9182.2
April 4, 2006
ISL6753
If the application requires deadtime less than about 500ns,
the CTBUF signal may not perform adequately for slope
compensation. CTBUF lags the CT sawtooth waveform by
300-400ns. This behavior results in a non-zero value of
CTBUF when the next half-cycle begins when the deadtime
is short.
CT
DEADTIME
OUTLL
Under these situations, slope compensation may be added
by externally buffering the CT signal as shown below.
PWM
PWM
PWM
OUTLR
1
VREF 16
2
15
3
R9
ISL6753
OUTUR
RESONANT
DELAY
14
4
13
5 CT
12
6
11
7
10
8 CS
9
R6
RCS
PWM
OUTUL
RESDEL
WINDOW
FIGURE 9. BRIDGE DRIVE SIGNAL TIMING
To understand how the ZVS method operates one must
include the parasitic elements of the circuit and examine a
full switching cycle.
CT
C4
VIN+
UL
UR
D1
VOUT+
LL
FIGURE 8. ADDING SLOPE COMPENSATION USING CT
Using CT to provide slope compensation instead of CTBUF
requires the same calculations, except that Equations 21
and 22 require modification. Equation 21 becomes:
2D ⋅ R6
V e – ∆V CS = ---------------------R6 + R9
RTN
LL
LR
D2
VIN-
FIGURE 10. IDEALIZED FULL-BRIDGE
(EQ. 25)
V
and Equation 22 becomes:
( 2D – V e + ∆V CS ) ⋅ R6
R9 = -----------------------------------------------------------V e – ∆V CS
Ω
(EQ. 26)
The buffer transistor used to create the external ramp from
CT should have a sufficiently high gain so as to minimize the
required base current. Whatever base current is required
reduces the charging current into CT and will reduce the
oscillator frequency.
ZVS Full-Bridge Operation
The ISL6753 is a full-bridge zero-voltage switching (ZVS)
PWM controller that behaves much like a traditional hardswitched topology controller. Rather than drive the diagonal
bridge switches simultaneously, the upper switches (OUTUL,
OUTUR) are driven at a fixed 50% duty cycle and the lower
switches (OUTLL, OUTLR) are pulse width modulated on
the trailing edge.
12
In Figure 10, the power semiconductor switches have been
replaced by ideal switch elements with parallel diodes and
capacitance, the output rectifiers are ideal, and the
transformer leakage inductance has been included as a
discrete element. The parasitic capacitance has been
lumped together as switch capacitance, but represents all
parasitic capacitance in the circuit including winding
capacitance. Each switch is designated by its position, upper
left (UL), upper right (UR), lower left (LL), and lower right
(LR). The beginning of the cycle, shown in Figure 11, is
arbitrarily set as having switches UL and LR on and UR and
LL off. The direction of the primary and secondary currents
are indicated by IP and IS, respectively.
FN9182.2
April 4, 2006
ISL6753
VIN+
UL
UR
D1
IS
VOUT+
LL
IP
RTN
LL
LR
resonant delay. The voltage applied to RESDEL determines
how far in advance the toggle occurs prior to a lower switch
turning on. The ZVS transition occurs after the upper
switches toggle and before the diagonal lower switch turns
on. The required resonant delay is 1/4 of the period of the LC
resonant frequency of the circuit formed by the leakage
inductance and the parasitic capacitance. The resonant
transition may be estimated from Equation 27.
D2
VIN-
FIGURE 11. UL - LR POWER TRANSFER CYCLE
The UL - LR power transfer period terminates when switch
LR turns off as determined by the PWM. The current flowing
in the primary cannot be interrupted instantaneously, so it
must find an alternate path. The current flows into the
parasitic switch capacitance of LR and UR which charges
the node to VIN and then forward biases the body diode of
upper switch UR.
π
1
τ = --- ----------------------------------2
2
R
1
--------------- – ---------2
LL CP
4L L
(EQ. 27)
where τ is the resonant transition time, LL is the leakage
inductance, CP is the parasitic capacitance, and R is the
equivalent resistance in series with LL and CP.
The resonant delay is always less than or equal to the
deadtime and may be calculated using the following
equation.
V resdel
τ resdel = -------------------- ⋅ DT
2
VIN+
UL
UR
D1
VOUT+
LL
IP
RTN
LL
(EQ. 28)
S
IS
LR
D2
VIN-
FIGURE 12. UL - UR FREE-WHEELING PERIOD
The primary leakage inductance, LL, maintains the current
which now circulates around the path of switch UL, the
transformer primary, and switch UR. When switch LR opens,
the output inductor current free-wheels through both output
diodes, D1 and D2. During the switch transition, the output
inductor current assists the leakage inductance in charging
the upper and lower bridge FET capacitance.
The current flow from the previous power transfer cycle
tends to be maintained during the free-wheeling period
because the transformer primary winding is essentially
shorted. Diode D1 may conduct very little or none of the
free-wheeling current, depending on circuit parasitics. This
behavior is quite different than occurs in a conventional
hard-switched full-bridge topology where the free-wheeling
current splits nearly evenly between the output diodes, and
flows not at all in the primary.
where τresdel is the desired resonant delay, Vresdel is a
voltage between 0 and 2V applied to the RESDEL pin, and
DT is the deadtime (see Equations 1 - 5).
When the upper switches toggle, the primary current that
was flowing through UL must find an alternate path. It
charges/discharges the parasitic capacitance of switches UL
and LL until the body diode of LL is forward biased. If
RESDEL is set properly, switch LL will be turned on at this
time.The output inductor does not assist this transition. It is
VIN+
UL
UR
D1
IS
VOUT+
LL
IP
RTN
LL
LR
D2
VIN-
FIGURE 13. UPPER SWITCH TOGGLE AND RESONANT
TRANSITION
purely a resonant transition driven by the leakage
inductance.
This condition persists through the remainder of the halfcycle.
During the period when CT discharges, also referred to as
the deadtime, the upper switches toggle. Switch UL turns off
and switch UR turns on. The actual timing of the upper
switch toggle is dependent on RESDEL which sets the
13
FN9182.2
April 4, 2006
ISL6753
The second power transfer period commences when switch
LL closes. With switches UR and LL on, the primary and
secondary currents flow as indicated below.
RESDEL is set properly, switch LR will be turned on at this
time.
VIN+
UL
UR
D1
VIN+
UL
UR
IS
VOUT+
LL
D1
IP
VOUT+
LL
RTN
LL
RTN
LL
D2
LR
D2
VIN-
FIGURE 16. UPPER SWITCH TOGGLE AND RESONANT
TRANSITION
VIN-
FIGURE 14. UR - LL POWER TRANSFER
The UR - LL power transfer period terminates when switch
LL turns off as determined by the PWM. The current flowing
in the primary must find an alternate path. The current flows
into the parasitic switch capacitance which charges the node
to VIN and then forward biases the body diode of upper
switch UL. As before, the output inductor current assists in
this transition. The primary leakage inductance, LL,
maintains the current, which now circulates around the path
of switch UR, the transformer primary, and switch UL. When
switch LL opens, the output inductor current free-wheels
predominantly through diode D1. Diode D2 may actually
conduct very little or none of the free-wheeling current,
depending on circuit parasitics. This condition persists
through the remainder of the half-cycle.
VIN+
UL
UR
D1
IS
VOUT+
LL
IP
RTN
LL
LR
LR
D2
VIN-
FIGURE 15. UR - UL FREE-WHEELING PERIOD
When the upper switches toggle, the primary current that
was flowing through UR must find an alternate path. It
charges/discharges the parasitic capacitance of switches UR
and LR until the body diode of LR is forward biased. If
The first power transfer period commences when switch LR
closes and the cycle repeats. The ZVS transition requires
that the leakage inductance has sufficient energy stored to
fully charge the parasitic capacitances. Since the energy
stored is proportional to the square of the current (1/2 LLIP2),
the ZVS resonant transition is load dependent. If the leakage
inductance is not able to store sufficient energy for ZVS, a
discrete inductor may be added in series with the
transformer primary.
Fault Conditions
A fault condition occurs if VREF or VDD fall below their
undervoltage lockout (UVLO) thresholds or if the thermal
protection is triggered. When a fault is detected, the softstart capacitor is quickly discharged, and the outputs are
disabled low. When the fault condition clears and the softstart voltage is below the reset threshold, a soft-start cycle
begins.
An overcurrent condition is not considered a fault and does
not result in a shutdown.
Thermal Protection
Internal die over temperature protection is provided. An
integrated temperature sensor protects the device should
the junction temperature exceed 140°C. There is
approximately 15°C of hysteresis.
Ground Plane Requirements
Careful layout is essential for satisfactory operation of the
device. A good ground plane must be employed. VDD and
VREF should be bypassed directly to GND with good high
frequency capacitance.
References
[1] Ridley, R., “A New Continuous-Time Model for Current
Mode Control”, IEEE Transactions on Power
Electronics, Vol. 6, No. 2, April 1991.
14
FN9182.2
April 4, 2006
ISL6753
Shrink Small Outline Plastic Packages (SSOP)
Quarter Size Outline Plastic Packages (QSOP)
M16.15A
N
INDEX
AREA
H
0.25(0.010) M
E
2
3
0.25
0.010
SEATING PLANE
-A-
INCHES
GAUGE
PLANE
-B1
16 LEAD SHRINK SMALL OUTLINE PLASTIC PACKAGE
(0.150” WIDE BODY)
B M
A
D
h x 45°
-C-
e
α
A1
B
0.17(0.007) M
L
A2
C
0.10(0.004)
C A M
B S
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “B” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.10mm (0.004 inch) total in excess
of “B” dimension at maximum material condition.
10. Controlling dimension: INCHES. Converted millimeter dimensions are not necessarily exact.
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.061
0.068
1.55
1.73
-
A1
0.004
0.0098
0.102
0.249
-
A2
0.055
0.061
1.40
1.55
-
B
0.008
0.012
0.20
0.31
9
C
0.0075
0.0098
0.191
0.249
-
D
0.189
0.196
4.80
4.98
3
E
0.150
0.157
3.81
3.99
4
e
0.025 BSC
0.635 BSC
-
H
0.230
0.244
5.84
6.20
-
h
0.010
0.016
0.25
0.41
5
L
0.016
0.035
0.41
0.89
6
8°
0°
N
α
16
0°
16
7
8°
Rev. 2 6/04
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15
FN9182.2
April 4, 2006