SiR418DP Datasheet

SiR418DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω)
ID (A)a
0.005 at VGS = 10 V
40
0.006 at VGS = 4.5 V
40
• Halogen-free According to IEC 61249-2-21
Definition
• Qg Optimized
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
24
APPLICATIONS
PowerPAK® SO-8
• DC/DC Conversion
• Industrial
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
S
Bottom View
Ordering Information: SiR418DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
ID
Temperature)d, e
PD
TJ, Tstg
Limit
40
± 20
Unit
V
40a
40a
23.5b, c
18.8b, c
70
35
A
4.5b, c
30
45
39
25
mJ
5b, c
3.2b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t ≤ 10 s
20
25
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
2.1
3.2
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
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SiR418DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS /TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 1 µA to 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
48
mV/°C
- 5.6
1.1
2.4
V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
30
µA
A
VGS = 10 V, ID = 20 A
0.00415
0.005
VGS = 4.5 V, ID = 15 A
0.0048
0.006
VDS = 15 V, ID = 20 A
95
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
2410
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 20 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
36
nC
7.0
f = 1 MHz
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
0.2
0.7
1.4
19
35
73
140
60
12
24
td(on)
9
18
10
20
25
45
8
16
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
75
24
32
td(off)
Turn-Off Delay Time
50
tf
tr
Rise Time
pF
6.5
VDS = 20 V, VGS = 4.5 V, ID = 20 A
td(on)
Turn-On Delay Time
371
141
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
35
70
IS = 4 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.71
1.1
V
24
45
ns
15
30
nC
13
11
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
SiR418DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
VGS = 10 V thru 3 V
8
I D - Drain Current (A)
I D - Drain Current (A)
56
42
28
6
4
TC = 25 °C
14
2
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
3200
0.0059
0.0055
2560
VGS = 4.5 V
0.0051
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TC = - 55 °C
0
0.0047
VGS = 10 V
0.0043
Ciss
1920
1280
640
0.0039
Coss
Crss
0
0.0035
0
14
28
42
56
0
70
16
24
32
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
40
2.0
ID = 20 A
ID = 20 A
8
VGS = 10 V
VDS = 10 V
VDS = 20 V
6
4
VDS = 30 V
2
(Normalized)
1.7
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
8
1.4
VGS = 4.5 V
1.1
0.8
0
0
12
24
36
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
48
60
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiR418DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.020
10
0.016
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
VGS(th) Variance (V)
0.001
0.0
0.012
TJ = 125 °C
0.008
TJ = 25 °C
0.004
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
160
- 0.1
ID = 5 mA
- 0.4
Power (W)
I S - Source Current (A)
ID = 20 A
120
80
ID = 250 µA
- 0.7
- 1.0
- 50
40
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
100
I D - Drain Current (A)
Limited by RDS(on)*
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
SiR418DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
75
I D - Drain Current (A)
60
45
Package Limited
30
15
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
50
2.5
40
2.0
30
1.5
Power (W)
Power (W)
Current Derating*
20
10
1.0
0.5
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
www.vishay.com
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SiR418DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65153.
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Document Number: 65153
S09-1813-Rev. A, 14-Sep-09
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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