Si7682DP Datasheet

Si7682DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0090 at VGS = 10 V
20
0.0130 at VGS = 4.5 V
20
VDS (V)
30
Qg (Typ.)
11 nC
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
S
Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free)
Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Unit
V
17.5b, c
14.0b, c
50
20
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
20
15.5
4.5b, c
27.5
17.5
5b, c
3.2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
20
3.5
Maximum
25
4.5
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
www.vishay.com
1
Si7682DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IDSS
On-State Drain Currenta
ID(on)
Forward Transconductancea
1.4
gfs
2.5
2.2
VDS = 0 V, VGS = ± 20 V
± 100
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
RDS(on)
mV/°C
6.5
VDS = VGS, ID = 5 mA
IGSS
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
ID = 250 µA
VDS = VGS, ID = 250 µA
V
35
30
V
nA
µA
A
VGS = 10 V, ID = 20 A
0.0075
0.0090
VGS = 4.5 V, ID = 9.5 A
0.0105
0.0130
VDS = 15 V, ID = 20 A
35
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
VDS = 15 V, VGS = 4.5 V, ID = 11 A
24
38
11
17
4
VDD = 15 V, RL = 1.87 Ω
ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 Ω
0.2
0.55
0.9
18
30
82
130
18
30
tf
10
16
td(on)
11
18
VDD = 15 V, RL = 1.87 Ω
ID ≅ 8 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
Fall Time
nC
3.1
f = 1 MHz
td(off)
Rise Time
Turn-Off Delay Time
VDS = 15 V, VGS = 10 V, ID = 11 A
tr
Fall Time
Turn-On Delay Time
pF
375
150
td(on)
Rise Time
Turn-Off Delay Time
1595
VDS = 15 V, VGS = 0 V, f = 1 MHz
tf
55
85
23
35
8
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
TC = 25 °C
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
20
A
50
IS = 2.3 A
IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C
0.76
1.1
V
30
45
ns
24
40
nC
15.5
14.5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
Si7682DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.2
50
1.0
I D - Drain Current (A)
I D - Drain Current (A)
40
VGS = 10 thru 4 V
30
20
0.8
0.6
TC = 125 °C
0.4
10
0.2
3V
25 °C
- 55 °C
0
0.0
0.3
0.6
0.9
1.2
0.0
1.0
1.5
1.4
1.8
2.2
2.6
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.016
2000
0.014
1600
0.012
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
Ciss
VGS = 4.5 V
0.010
1200
800
Coss
VGS = 10 V
0.008
400
0.006
0
0
10
20
30
40
50
0
6
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.8
10
ID = 11 A
1.6
8
6
VDS = 15 V
VDS = 20 V
4
2
ID = 12 A
VGS = 10 V
1.4
(Normalized)
VDS = 10 V
R DS(on) - On-Resistance
V GS - Gate-to-Source Voltage (V)
Crss
1.2
VGS = 4.5 V
1.0
0.8
0
0
5
10
15
20
25
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
150
www.vishay.com
3
Si7682DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
R DS(on) - Drain-to-Source On-Resistance (Ω)
40
10
I S - Source Current (A)
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
ID = 11 A
0.04
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0.001
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
200
0.2
160
ID = 250 µA
Power (W)
VGS(th) (V)
0.0
- 0.2
120
80
- 0.4
40
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by
R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.1
dc
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
Si7682DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
ID - Drain Current (A)
40
30
20
Package Limited
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
35
2.5
30
2.0
Power (W)
Power (W)
25
20
15
1.5
1.0
10
0.5
5
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
www.vishay.com
5
Si7682DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73350.
www.vishay.com
6
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000