SiR484DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch • POL G 4 D D 7 Rectifier 5.15 mm 1 2 8 • Halogen-free • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • Optimized for High-Side Synchronous Operation • 100 % Rg Tested • 100 % UIS Tested G D 6 D 5 S Bottom View Ordering Information: SiR484DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 20 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V 20g 20g 17.2b, c 13.7b, c 50 IDM Pulsed Drain Current Unit A 20g 3.2b, c 22 24 29.8 19.0 mJ 3.9b, c 2.5b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 27 3.5 Maximum 32 4.2 Unit °C/W Notes: a. Base on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. g. Package Limited. Document Number: 69024 S-82664-Rev. A, 03-Nov-08 www.vishay.com 1 SiR484DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C -5 1.0 2.5 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V RDS(on) V 20 20 µA A VGS = 10 V, ID = 17.2 A 0.0069 0.0083 VGS = 4.5 V, ID = 14.6 A 0.0095 0.0115 VDS = 10 V, ID = 17.2 A 29 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 830 VDS = 10 V, VGS = 0 V, f = 1 MHz 112 VDS = 10 V, VGS = 10 V, ID = 17.2 A VDS = 10 V, VGS = 4.5 V, ID = 17.2 A VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr Rise Time Fall Time Turn-On Delay Time Turn-Off Delay Time 0.4 1.9 3.8 15 23 18 24 tf 10 20 td(on) 6 12 10 20 17 26 8 15 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω td(off) tf Fall Time 2.7 12 tr Rise Time 23 10.7 16 td(off) Turn-Off Delay Time 15 7.1 nC 1.6 f = 1 MHz td(on) Turn-On Delay Time pF 280 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage TC = 25 °C IS 20 ISM 50 IS = 10 A VSD 0.8 1.2 A V Body Diode Reverse Recovery Time trr 15 30 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 8 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69024 S-82664-Rev. A, 03-Nov-08 SiR484DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 10 VGS = 10 thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 VGS = 3 V 20 10 6 4 TC = 25 °C 2 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 Output Characteristics 2.0 2.5 3.0 Transfer Characteristics 0.015 1200 0.012 900 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.009 VGS = 10 V 0.006 Ciss 600 Coss 300 0.003 Crss 0.000 0 0 10 20 30 40 50 0 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 17.2 A ID = 17.2 A 8 VDS = 10 V 6 VDS = 16 V 4 1.5 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.2 VGS = 4.5 V 0.9 2 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69024 S-82664-Rev. A, 03-Nov-08 16 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiR484DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.024 0.018 TJ = 125 °C 0.012 0.006 TJ = 25 °C 0.000 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 40 1.6 30 Power (W) VGS(th) (V) 4 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 1.9 ID = 250 µA 1.0 0.7 - 50 3 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.3 2 20 10 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µA I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69024 S-82664-Rev. A, 03-Nov-08 SiR484DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 I D - Drain Current (A) 50 40 30 Package Limited 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 40 2.5 2.0 Power (W) Power (W) 30 20 1.5 1.0 10 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Case Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69024 S-82664-Rev. A, 03-Nov-08 www.vishay.com 5 SiR484DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69024. www.vishay.com 6 Document Number: 69024 S-82664-Rev. A, 03-Nov-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1