Innovations Embedded Distribution Spotlight Silicon Carbide (SiC) Power MOSFETs Provide Breakthrough Performance Rohm’s silicon carbide power MOSFETs feature on resistance as low as 80 mΩ at 1200V and switching losses that are about 90% less than that of silicon IGBT. High-switching frequency and low-losses allow the use of much smaller magnetics and capacitors and simpler thermal management, resulting in significant reduction in size, weight, and system cost. The SCT2xxxKEC series is rated for 1200V breakdown voltage while SCT2xxxAxx is rated for 650V. SCH2080KEC is the industry’s first and only SiC MOSFET with discrete anti-parallel SiC Schottky Barrier Diode integrated in the same package. Applications Key Features High powered DC-DC converters, motor drives, solar inverters, power conditioners, grid-tied converters • 1200V and 650V breakdown voltage rating • 90% lower turn off loss compared to IGBT • 34% lower turn on loss compared to IGBT • Sub 100 ns switching • RDSON as low as 80 mΩ • Continuous Id = 10A – 40A • Body diode as very low reverse recovery loss • Simple gate drive – similar to power MOSFET and IGBT • 175°C Tj Pricing Quantity per reel: NA Price: NA Samples available BVDSS P/N Package RDSon ID max SBD 1200V SCH2080KEC TO247 80mΩ 40A Co-packed 1200V SCT 2080KEC TO247 80mΩ 40A - 1200V SCT2160KEC TO247 160mΩ 22A - 1200V SCT2280KEC TO247 280mΩ 14A - 1200V SCT2450KEC TO247 450mΩ 10A - 650V SCT2120AFC TO220AB 120mΩ 29A - more info: click here visit us: www.rohm.com