Product Highlight

Innovations Embedded
Distribution Spotlight
Silicon Carbide (SiC) Power MOSFETs
Provide Breakthrough Performance
Rohm’s silicon carbide power MOSFETs feature on
resistance as low as 80 mΩ at 1200V and switching
losses that are about 90% less than that of silicon IGBT.
High-switching frequency and low-losses allow the use of
much smaller magnetics and capacitors and simpler
thermal management, resulting in significant reduction in
size, weight, and system cost. The SCT2xxxKEC series is
rated for 1200V breakdown voltage while SCT2xxxAxx is
rated for 650V. SCH2080KEC is the industry’s first and
only SiC MOSFET with discrete anti-parallel SiC Schottky
Barrier Diode integrated in the same package.
Applications
Key Features
High powered DC-DC converters,
motor drives, solar inverters,
power conditioners, grid-tied
converters
• 1200V and 650V breakdown voltage rating
• 90% lower turn off loss compared to IGBT
• 34% lower turn on loss compared to IGBT
• Sub 100 ns switching
• RDSON as low as 80 mΩ
• Continuous Id = 10A – 40A
• Body diode as very low reverse recovery loss
• Simple gate drive – similar to power MOSFET and IGBT
• 175°C Tj
Pricing
Quantity per reel: NA
Price: NA
Samples available
BVDSS
P/N
Package
RDSon
ID max
SBD
1200V
SCH2080KEC
TO247
80mΩ
40A
Co-packed
1200V
SCT 2080KEC
TO247
80mΩ
40A
-
1200V
SCT2160KEC
TO247
160mΩ
22A
-
1200V
SCT2280KEC
TO247
280mΩ
14A
-
1200V
SCT2450KEC
TO247
450mΩ
10A
-
650V
SCT2120AFC
TO220AB
120mΩ
29A
-
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