IXFL34N100 HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS(on) ≤ 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 30 136 A A IA EAS TC = 25°C TC = 25°C 34 4 A J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD Maximum Ratings 550 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 260 °C °C 40..120 / 9..27 N/lb. 2500 3000 V~ V~ 8 g 1.6 mm (0.063 in.) from Case for 10s Plastic body for 10s FC Mounting Force VISOL 50/60 Hz, RMS IISOL ≤ 1 mA D t = 1 min t=1s Weight G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 17A, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved ISOLATED TAB D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z Low Drain to Tab Capacitance(<30pF) z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Fast intrinsic Rectifier Advantages z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) S z TC = 25°C TL TSOLD G High Power Density Easy to Mount Space Savings Applications: V 5.5 V ± 100 nA 100 μA 2 mA 280 mΩ z z z z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters DC Choppers Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS98932D(7/09) IXFL34N100 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 15V, ID = 17A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 17A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 17A Qgd ISOPLUS264TM (IXFL) Outline 40 S 9200 pF 1200 pF 300 pF 41 ns 65 ns 110 ns 30 ns 380 nC 65 nC 185 nC Note: Bottom heatsink meets 0.225 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 34 A Repetitive, Pulse Width Limited by TJM 136 A IF = IS, VGS = 0V, Note 1 1.3 V 300 ns ns IF = IS, VGS = 0V -di/dt = 100A/μs VR = 100V TJ = 125°C 180 330 2 8 Ref: IXYS CO 0128 μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. Please see IXFN36N100 data sheet for characteristic curves. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2