DB3J407K Silicon epitaxial planar type Unit: mm For high frequency rectification DB3X407K in SMini3 type package Features Short reverse recovery time trr Low forward voltage VF Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 3J Packaging DB3J407K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Anode 2: N.C. 3: Cathode Panasonic JEITA Code Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 40 V Repetitive peak reverse voltage VRRM 40 V Forward current (Average) IF(AV) 500 mA Non-repetitive peak forward surge current *1 IFSM 2 A Tj 125 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +125 °C Reverse voltage Junction temperature SMini3-F2-B SC-85 3 1 Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) 2 Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 500 mA 0.55 V Reverse current IR VR = 35 V 100 mA Terminal capacitance Ct VR = 10 V, f = 1 MHz 12 pF Reverse recovery time *1 trr IF = IR = 100 mA, Irr = 0.1 × IR , RL = 100 Ω 5 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 400 MHz *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: May 2013 VR 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Ver. DED Output Pulse t IF trr t Irr = 0.1 × IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 DB3J407K DB3J407K_ IR-VR DB3J407K_ IF-VF 10−1 10 Reverse current IR (A) Forward current IF (A) 25°C 10−4 100°C 10−5 85°C 10−6 25°C 0 0.2 −40°C 60 40 20 10−7 −40°C 10−5 Ta = 25°C 10−3 Ta = 125°C 10−3 Ct VR 80 100°C 85°C Ta = 125°C 10−2 10−1 DB3J407K_Ct-VR IR VR Terminal capacitance Ct (pF) IF VF 0.4 Forward voltage VF (V) 0.6 10−8 0 10 20 30 Reverse voltage VR (V) Ver. DED 40 0 0 10 20 30 40 Reverse voltage VR (V) 2 DB3J407K SMini3-F2-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. DED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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