DB3X314K Silicon epitaxial planar type Unit: mm For high speed switching circuits Features Short reverse recovery time trr Small reverse current IR Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 4X Packaging DB3X314K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 1: Anode 2: N.C. 3: Cathode Panasonic JEITA Code Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V VRM 30 V IF 30 mA Peak forward current IFM 150 mA Junction temperature Tj 125 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +125 °C Reverse voltage Maximum peak reverse voltage Forward current Mini3-G3-B SC-59A TO-236AA/SOT-23 3 1 2 Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit VF1 IF = 1 mA 0.4 VF2 IF = 30 mA 1.0 Reverse current IR VR = 30 V 300 Terminal capacitance Ct VR = 10 V, f = 1 MHz 1.5 pF Reverse recovery time *1 trr IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω 1.0 ns Forward voltage V nA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2013 VR Ver. CED t IF trr 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse IF = 10 mA IR = 10 mA RL = 100 Ω t Irr = 1 mA 1 DB3X314K DB3X314K_ IR-VR DB3X314K_ IF-VF IF VF Ta = 125°C Pulse test 10−5 25°C 10−7 10−3 85°C 10−9 25°C Ta = 25°C 85°C Reverse current IR (A) Forward current IF (A) 10−2 Ta = 125°C 10−4 Ct VR 5.0 Terminal capacitance Ct (pF) 10−1 DB3X314K_Ct-VR IR VR −40°C 4.0 3.0 2.0 1.0 −40°C 10−5 0 0.2 0.4 0.6 0.8 Forward voltage VF (V) 1.0 10−11 0 10 20 Reverse voltage VR (V) Ver. CED 30 0 0 10 20 30 Reverse voltage VR (V) 2 DB3X314K Mini3-G3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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