IRLD014, SiHLD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5 V Available • For Automatic Insertion 0.20 RoHS* Qg (Max.) (nC) 8.4 • End Stackable Qgs (nC) 2.6 • Logic-Level Gate Drive 6.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) Configuration Single COMPLIANT • 175 °C Operating Temperature • Fast Switching D HVMDIP • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. G S G D S N-Channel MOSFET ORDERING INFORMATION Package HVMDIP IRLD014PbF SiHLD014-E3 IRLD014 SiHLD014 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5.0 V TA = 25 °C TA = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery TA = 25 °C dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s UNIT V 1.7 1.2 A 14 0.0083 W/°C EAS 490 mJ PD 1.3 W dV/dt 4.5 V/ns TJ, Tstg - 55 to + 175 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 197 mH, Rg = 25 , IAS = 1.7 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 www.vishay.com 1 IRLD014, SiHLD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL TYP. MAX. UNIT RthJA - 120 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 60 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VGS = 5.0 V ID = 1.0 Ab - - 0.20 VGS = 4.0 V ID = 0.85 Ab - - 0.28 1.9 - - - 400 - - 170 - - 42 - VDS = 25 V, ID = 1.0 Ab µA S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 VGS = 5.0 V ID = 10 A, VDS = 48 V see fig. 6 and 13b - - 8.4 - - 2.6 Gate-Drain Charge Qgd - - 6.4 Turn-On Delay Time td(on) - 9.3 - - 110 - - 17 - - 26 - - 4.0 - - 6.0 - D - - 1.7 S - - 14 TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb - - 1.6 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 30 V, ID = 10 A Rg = 12 , RD = 2.8 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode A G TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb V - 93 130 ns - 0.34 0.65 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 µs; duty cycle 2 %. www.vishay.com 2 Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 IRLD014, SiHLD014 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 µs PULSE WIDTH TA = 25 °C Fig. 1 - Typical Output Characteristics, TA = 25 °C Fig. 3 - Typical Transfer Characteristics 20 µs PULSE WIDTH TA = 175 °C Fig. 2 - Typical Output Characteristics, TA = 175 °C Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRLD014, SiHLD014 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage TA = 25 °C TJ = 175 °C SINGLE PULSE Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 8 - Maximum Safe Operating Area Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 IRLD014, SiHLD014 Vishay Siliconix RD VDS VGS D.U.T. ID, Drain Current (A) Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS TA, Ambient Temperature (°C) td(on) td(off) tf Fig. 10b - Switching Time Waveforms Thermal Response (ZthJA) Fig. 9 - Maximum Drain Current vs. Ambient Temperature tr t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 www.vishay.com 5 IRLD014, SiHLD014 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. Rg + - I AS V DD VDS 10 V 0.01 W tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 IRLD014, SiHLD014 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91307. Document Number: 91307 S10-2465-Rev. D, 08-Nov-10 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1