IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current Single • Enhanced Body Diode dV/dt Capability D • Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS • Hard Switching Primary or PFC Switch G • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply S • High Speed Power Switching D S G • Motor Drive N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP27N60KPbF Lead (Pb)-free SiHFP27N60K-E3 IRFP27N60K SnPb SiHFP27N60K ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 27 18 A IDM 110 4.0 W/°C EAS 530 mJ Currenta IAR 27 A Repetitive Avalanche Energya EAR 50 mJ Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 500 W dV/dt 13 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.4 mH, Rg = 25 , IAS = 27 A, dV/dt = 13 V/ns (see fig. 12). c. ISD 27 A, dI/dt 390 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP27N60K, SiHFP27N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.29 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 640 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 μA - 0.18 0.22 gfs VDS = 50 V, ID = 16 A 14 - - S Input Capacitance Ciss VGS = 0 V - 4660 - Output Capacitance Coss VDS = 25 V - 460 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 16 Ab VGS = 10 V Dynamic Output Capacitance Effective Output Capacitance Total Gate Charge Coss Coss eff. - 41 - VGS = 0 V VDS = 1.0 V , f = 1.0 MHz - 5490 - VGS = 0 V VDS = 480 V , f = 1.0 MHz - 120 - VGS = 0 V VDS = 0 V to 480 V - 250 - - - 180 - - 56 Qg VGS = 10 V ID = 27 A, VDS = 480 V pF Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 86 Turn-On Delay Time td(on) - 27 - - 110 - - 43 - - 38 - - - 27 - - 110 - - 1.5 - 620 920 ns - 11 16 μC - 36 53 A Rise Time Turn-Off Delay Time Fall Time tr td(off) see fig. 6 and 13b VDD = 300 V, ID = 27 A Rg = 4.3 , VGS = 10 V, see fig. 10b tf nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Current Forward Turn-On Time IRRM ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 27 A, VGS = 0 Vb TJ = 25 °C, IF = 27 A, dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS. www.vishay.com 2 Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP27N60K, SiHFP27N60K Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 1000.00 100 10 ID, Drain-to-Source Current (Α ) ID, Drain-to-Source Current (A) TOP T J = 150°C 100.00 1 0.1 5.0V 0.01 10.00 1.00 T J = 25°C 0.10 20µs PULSE WIDTH Tj = 25°C VDS = 100V 20µs PULSE WIDTH 0.001 0.01 0.1 1 10 5.0 100 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 7.0 9.0 11.0 13.0 15.0 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 3.5 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V I D = 28A 5.0V 1 0.1 20µs PULSE WIDTH Tj = 150°C 0.01 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 100 2.5 (Normalized) 10 3.0 R DS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) TOP 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 TJ , Junction Temperature 80 100 120 140 160 ( ° C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP27N60K, SiHFP27N60K Vishay Siliconix 100000 Coss = Cds + Cgd 100 I SD , Reverse Drain Current (A) 10000 C, Capacitance(pF) 1000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Ciss 1000 Coss 100 Crss 10 T J= 150 ° C T J= 25 ° C 1 V GS = 0 V 10 1 10 100 0.1 1000 0.2 ID = 28A 0.8 1.1 1.4 V SD,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 VDS = 480V VDS = 300V VDS = 120V OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 12 0.5 10 VGS , Gate-to-Source Voltage (V) 100 7 5 2 10 100µsec 1msec 1 0.1 0 0 30 60 90 120 150 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Tc = 25°C Tj = 150°C Single Pulse 10 10msec 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP27N60K, SiHFP27N60K Vishay Siliconix RD VDS 30 VGS ID , Drain Current (A) D.U.T. RG 25 + - VDD 10 V 20 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 15 Fig. 10a - Switching Time Test Circuit 10 VDS 90 % 5 0 25 50 75 100 125 150 10 % VGS TC , Case Temperature (°C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms (Z thJC ) 1 D = 0.50 0.1 Thermal Response 0.20 0.10 0.05 P DM 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP27N60K, SiHFP27N60K Vishay Siliconix VDS tp 15 V Driver L VDS D.U.T RG + A - VDD IAS 20 V tp A IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 950 ID 13A 18A 28A TOP EAS , Single Pulse Avalanche Energy (mJ) 760 BOTTOM 570 380 190 0 25 50 75 100 Starting Tj, Junction Temperature 125 150 ( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP27N60K, SiHFP27N60K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91219. Document Number: 91219 S11-0487-Rev. C, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 - DIM. D2 E E1 e Øk L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo. Revision: 01-Jul-13 Document Number: 91360 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000