IRF IRFP27N60K

PD - 94407
IRFP27N60K
SMPS MOSFET
Applications
l Hard Switching Primary or PFC Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
ID
180mΩ
27A
600V
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
Max.
Units
27
18
110
500
4.0
± 30
13
-55 to + 150
A
W
W/°C
V
V/ns
300
°C
10 lbf•in (1.1N•m)
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
530
27
50
mJ
A
mJ
Typ.
Max.
Units
–––
0.24
–––
0.29
–––
40
°C/W
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
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Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
1
03/20/02
IRFP27N60K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
∆V(BR)DSS/∆TJ
Min. Typ. Max. Units
Conditions
600 ––– –––
V
VGS = 0V, ID = 250µA
––– 0.64 ––– V/°C Reference to 25°C, ID = 1mA†
––– 180 220
mΩ VGS = 10V, ID = 16A „
3.0
––– 5.0
V
VDS = V GS, ID = 250µA
––– ––– 50
VDS = 600V, VGS = 0V
µA
––– ––– 250
VDS = 480V, VGS = 0V, TJ = 125°C
––– ––– 100
VGS = 30V
nA
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
27
110
43
38
4660
460
41
5490
120
250
Max. Units
Conditions
–––
S
VDS = 50V, ID = 16A
180
ID = 27A
56
nC
VDS = 480V
86
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 300V
–––
ID = 27A
ns
–––
RG = 4.3Ω
–––
VGS = 10V,See Fig. 10 „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 480V …
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Q rr
IRRM
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
27
–––
–––
110
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 27A, VGS = 0V
TJ = 25°C, IF = 27A
di/dt = 100A/µs „
D
S
––– ––– 1.5
V
„
––– 620 920
ns
––– 11
16
µC
––– 36
53
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 1.4mH, RG = 25Ω,
IAS = 27A, dv/dt = 13V/ns. (See Figure 12a)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ƒ ISD ≤ 27A, di/dt ≤ 390A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
2
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IRFP27N60K
1000
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
10
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
1
0.1
5.0V
0.01
10
5.0V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.001
0.01
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000.00
3.5
T J = 150°C
I D = 28A
3.0
10.00
1.00
T J = 25°C
0.10
VDS = 100V
20µs PULSE WIDTH
0.01
5.0
7.0
9.0
11.0
13.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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15.0
(Normalized)
2.5
R DS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α )
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.00
10
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
160
IRFP27N60K
100000
1000
Coss
100
Crss
V DS = 120V
10
7
5
2
0
1
10
100
0
1000
30
90
120
150
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100
I SD, Reverse Drain Current (A)
60
Q G, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
T J= 150 ° C
10
T J= 25 ° C
1
V GS = 0 V
0.1
0.2
0.5
0.8
1.1
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V DS = 480V
10
VGS, Gate-to-Source Voltage (V)
Ciss
ID = 28A
V DS = 300V
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1.4
10
100µsec
1msec
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
10
10msec
100
1000
10000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP27N60K
RD
30
VDS
VGS
25
D.U.T.
RG
+
-VDD
ID , Drain Current (A)
20
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5
90%
0
25
50
75
100
TC , Case Temperature
125
150
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC )
1
D = 0.50
0.1
Thermal Response
0.20
0.10
0.05
0.01
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t1/ t
2
J = P DM x Z thJC
+T C
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP27N60K
950
ID
13A
TOP
18A
EAS , Single Pulse Avalanche Energy (mJ)
760
BOTTOM
28A
1 5V
570
D .U .T
RG
380
D R IV E R
L
VDS
+
- VD D
IA S
20V
tp
190
A
0 .0 1 Ω
Fig 12c. Unclamped Inductive Test Circuit
0
25
50
75
100
Starting Tj, Junction Temperature
125
150
( ° C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
V (B R )D SS
tp
IAS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
VGS
.2µF
.3µF
D.U.T.
QGS
+
V
- DS
QGD
VG
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
Charge
Fig 13b. Basic Gate Charge Waveform
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IRFP27N60K
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP27N60K
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
-D -
3.6 5 (.14 3)
3.5 5 (.14 0)
1 5.9 0 (.6 26 )
1 5.3 0 (.6 02 )
-B -
0.2 5 (.0 10 ) M
5 .30 (.20 9)
4 .70 (.18 5)
2 .50 (.0 89 )
1 .50 (.0 59 )
4
D B M
-A 5 .50 (.21 7)
2 0 .30 (.80 0)
1 9 .70 (.77 5)
1
2
NO TE S:
5.50 (.2 1 7)
4.50 (.1 7 7)
2X
1 DIM EN SION ING & TO LER AN CING
P ER A N SI Y14.5M , 1982.
2 CON TR OLLIN G D IM EN SIO N : IN CH .
3 CON F OR M S TO JED E C OU TLIN E
TO-247-A C .
3
-C -
14.8 0 (.5 83 )
14.2 0 (.5 59 )
2 .40 (.0 94 )
2 .00 (.0 79 )
2X
5.45 (.2 1 5)
2X
4 .30 (.1 70 )
3 .70 (.1 45 )
0 .8 0 (.0 31 )
3X 0 .4 0 (.0 16 )
1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0.2 5 (.01 0) M
3 .40 (.1 33 )
3 .00 (.1 18 )
2.60 (.10 2)
2.20 (.08 7)
C A S
LE AD A S SIG N ME NTS
1
2
3
4
-
G ATE
DR A IN
SO UR C E
DR A IN
TO-247AC Part Marking Information
E X A M P L E : T H IS IS A N IR F P E 30
W IT H A S S E M B L Y
LOT COD E 3A1Q
A
I N T E R N A T IO N A L
R E C T IF IE R
LOGO
P AR T N UM B E R
IR F P E 3 0
3A1Q
ASSEMBLY
LOT COD E
9302
DATE CO DE
(Y Y W W )
YY = YE A R
W W W EEK
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
8
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