IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current Single • Enhanced Body Diode dV/dt Capability D • Compliant to RoHS Directive 2002/95/EC TO-247AC BENEFITS • Hard Switching Primary or PFS Switch G • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply S D • High Speed Power Switching S G • Motor Drive N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP22N60KPbF SiHFP22N60K-E3 IRFP22N60K SiHFP22N60K Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Linear Derating Factor Single Pulse Avalanche Energyb UNIT V 22 14 A 88 2.9 W/°C EAS 380 mJ Repetitive Avalanche Currenta IAR 22 A Energya EAR 37 mJ Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s PD 370 W dV/dt 15 V/ns TJ, Tstg - 55 to + 150 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 , IAS = 22 A (see fig. 12). c. ISD 22 A, dI/dt 360 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91208 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP22N60K, SiHFP22N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.34 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS VDS VGS = 0 V, ID = 250 μA MIN. TYP. MAX. UNIT 600 - - V Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS/TJ VGS(th) - 0.30 - V/°C VDS = VGS, ID = 250 μA 3.0 - 5.0 V nA Reference to 25 °C, ID = 1 VGS = ± 30 V - - ± 100 VDS = 600 V, VGS = 0 V - - 50 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 IGSS IDSS RDS(on) gfs mAd ID = 13 Ab VGS = 10 V VDS = 50 V, ID = 13 Ab μA - 0.240 0.280 11 - - S - 3570 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-Off Delay Time Fall Time VGS = 0 V Coss eff. Total Gate Charge Rise Time VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 tr td(off) VGS = 10 V - 350 - - 36 - VDS = 1.0 V , f = 1.0 MHz - 4710 - VDS = 480 V , f = 1.0 MHz - 92 - VDS = 0 V to 480 V - 180 - - - 150 - - 45 - - 76 - 26 - - 99 - - 48 - - 37 - - - 22 - - 88 ID = 22 A, VDS = 480 V see fig. 6 and 13b VDD = 300 V, ID = 22 A, Rg = 6.2, VGS = 10 V, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time trr Qrr IRRM ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 22 A, VGS = 0 Vb TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 22 A, dI/dt = 100 A/μsb TJ =1 25 °C TJ = 25 °C - - 1.5 - 590 890 - 670 1010 - 7.2 11 - 8.5 13 - 26 39 V ns μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91208 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP22N60K, SiHFP22N60K Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100.00 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 10 ID, Drain-to-Source Current ( A) ID, Drain-to-Source Current (A) TOP 1 0.1 5.0V 0.01 T J = 150°C 10.00 1.00 T J = 25°C 0.10 VDS = 50V 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C 0.001 0.01 0.1 1 10 100 5.0 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 3.0 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 1 20µs PULSE WIDTH Tj = 150°C 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91208 S11-0445-Rev. B, 21-Mar-11 100 r , Drain-to-Source On Resistance DS(on) (Normalized) ID, Drain-to-Source Current (A) 5.0V 0.1 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics TOP 10 6.0 I D = 22A 2.5 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (° C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP22N60K, SiHFP22N60K Vishay Siliconix 100000 ISD, Reverse Drain Current (A) Crss Coss 10000 C, Capacitance (pF) 100.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED = Cgd = Cds + Cgd Ciss 1000 Coss 100 Crss 10 T J = 150°C 10.0 1.0 T J = 25°C VGS = 0V 0.1 1 10 100 1000 0.2 VDS, Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 VSD, Source-toDrain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1000 20 ID= 22A OPERATION IN THIS AREA LIMITED BY RDS(on) VDS= 480V VDS= 300V VDS= 120V 16 ID, Drain-to-Source Current (A) VGS , Gate-to-Source Voltage (V) 0.4 12 8 4 0 0 40 80 120 160 Q G Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 100µsec 10 1msec 1 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10 10msec 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91208 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP22N60K, SiHFP22N60K Vishay Siliconix RD VDS 25 VGS ID, Drain Current (A) D.U.T. RG 20 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 15 Fig. 10a - Switching Time Test Circuit 10 VDS 90 % 5 0 25 50 75 100 125 150 10 % VGS TC, Case Temperature (° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91208 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP22N60K, SiHFP22N60K Vishay Siliconix VDS 15 V Driver L VDS tp D.U.T RG + - VDD IAS 20 V tp IAS A 0.01Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 800 EAS, Single Pulse Avalanche Energy (mJ) ID TOP 9.8A 14A 22A BOTTOM 600 400 200 0 25 50 75 100 125 150 Starting T J, Junction Temperature Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91208 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP22N60K, SiHFP22N60K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91208. Document Number: 91208 S11-0445-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 - DIM. D2 E E1 e Øk L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo. Revision: 01-Jul-13 Document Number: 91360 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000