IRFP22N60K, SiHFP22N60K Datasheet

IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
600
RDS(on) ()
VGS = 10 V
0.24
Qg (Max.) (nC)
150
Qgs (nC)
45
Qgd (nC)
76
Configuration
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Single
• Enhanced Body Diode dV/dt Capability
D
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
BENEFITS
• Hard Switching Primary or PFS Switch
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
S
D
• High Speed Power Switching
S
G
• Motor Drive
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
IRFP22N60KPbF
SiHFP22N60K-E3
IRFP22N60K
SiHFP22N60K
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
Pulsed Drain
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
Energyb
UNIT
V
22
14
A
88
2.9
W/°C
EAS
380
mJ
Repetitive Avalanche Currenta
IAR
22
A
Energya
EAR
37
mJ
Repetitive Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
PD
370
W
dV/dt
15
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 , IAS = 22 A (see fig. 12).
c. ISD  22 A, dI/dt  360 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.34
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
VDS
VGS = 0 V, ID = 250 μA
MIN.
TYP.
MAX.
UNIT
600
-
-
V
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VDS/TJ
VGS(th)
-
0.30
-
V/°C
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
nA
Reference to 25 °C, ID = 1
VGS = ± 30 V
-
-
± 100
VDS = 600 V, VGS = 0 V
-
-
50
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
250
IGSS
IDSS
RDS(on)
gfs
mAd
ID = 13 Ab
VGS = 10 V
VDS = 50 V, ID = 13 Ab
μA
-
0.240
0.280

11
-
-
S
-
3570
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-Off Delay Time
Fall Time
VGS = 0 V
Coss eff.
Total Gate Charge
Rise Time
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
tr
td(off)
VGS = 10 V
-
350
-
-
36
-
VDS = 1.0 V , f = 1.0 MHz
-
4710
-
VDS = 480 V , f = 1.0 MHz
-
92
-
VDS = 0 V to 480 V
-
180
-
-
-
150
-
-
45
-
-
76
-
26
-
-
99
-
-
48
-
-
37
-
-
-
22
-
-
88
ID = 22 A, VDS = 480 V
see fig. 6 and 13b
VDD = 300 V, ID = 22 A,
Rg = 6.2, VGS = 10 V,
see fig. 10b
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
trr
Qrr
IRRM
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 22 A, VGS = 0 Vb
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 22 A,
dI/dt = 100 A/μsb
TJ =1 25 °C
TJ = 25 °C
-
-
1.5
-
590
890
-
670
1010
-
7.2
11
-
8.5
13
-
26
39
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100.00
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
ID, Drain-to-Source Current ( A)
ID, Drain-to-Source Current (A)
TOP
1
0.1
5.0V
0.01
T J = 150°C
10.00
1.00
T J = 25°C
0.10
VDS = 50V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
0.001
0.01
0.1
1
10
100
5.0
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
3.0
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
100
r
, Drain-to-Source On Resistance
DS(on)
(Normalized)
ID, Drain-to-Source Current (A)
5.0V
0.1
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
TOP
10
6.0
I D = 22A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ, Junction Temperature (° C)
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
100000
ISD, Reverse Drain Current (A)
Crss
Coss
10000
C, Capacitance (pF)
100.0
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
= Cgd
= Cds + Cgd
Ciss
1000
Coss
100
Crss
10
T J = 150°C
10.0
1.0
T J = 25°C
VGS = 0V
0.1
1
10
100
1000
0.2
VDS, Drain-to-Source Voltage (V)
0.6
0.8
1.0
1.2
1.4
VSD, Source-toDrain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
20
ID= 22A
OPERATION IN THIS AREA
LIMITED BY RDS(on)
VDS= 480V
VDS= 300V
VDS= 120V
16
ID, Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
0.4
12
8
4
0
0
40
80
120
160
Q G Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
100
100µsec
10
1msec
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
10msec
100
1000
10000
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
RD
VDS
25
VGS
ID, Drain Current (A)
D.U.T.
RG
20
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
15
Fig. 10a - Switching Time Test Circuit
10
VDS
90 %
5
0
25
50
75
100
125
150
10 %
VGS
TC, Case Temperature (° C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJC
+T C
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
VDS
15 V
Driver
L
VDS
tp
D.U.T
RG
+
- VDD
IAS
20 V
tp
IAS
A
0.01Ω
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
800
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP
9.8A
14A
22A
BOTTOM
600
400
200
0
25
50
75
100
125
150
Starting T J, Junction Temperature
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com
6
Fig. 13b - Gate Charge Test Circuit
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91208.
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-247AC (High Voltage)
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
4
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
(b1, b3, b5)
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
A1
2.21
2.59
A2
1.17
2.49
b
0.99
1.40
b1
0.99
1.35
b2
1.53
2.39
b3
1.65
2.37
b4
2.42
3.43
b5
2.59
3.38
c
0.38
0.86
c1
0.38
0.76
D
19.71
20.82
D1
13.08
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
INCHES
MIN.
MAX.
0.180
0.209
0.087
0.102
0.046
0.098
0.039
0.055
0.039
0.053
0.060
0.094
0.065
0.093
0.095
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.820
0.515
-
DIM.
D2
E
E1
e
Øk
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
0.254
14.20
16.25
3.71
4.29
7.62 BSC
3.51
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.640
0.146
0.169
0.300 BSC
0.138
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
Document Number: 91360
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000