Cypress Roadmap: Nonvolatile RAM Q2 2016 001-89686 Rev *P Owner: MRAN BUM: CNX Nonvolatile RAM Roadmap nvSRAM Portfolio High Density | High Speed 6 nvSRAM SPILPC nvSRAM I2C nvSRAM CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind1 RTC2 CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI3 1.0 x8, x16; Ind1 Higher Densities nvSRAM NDA Required Contact Sales CY14B104NA 4Mb; 3.0 V 25, 45 ns; x16 Auto E4; RTC2 CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI7; Ind1 Ext. Ind8; RTC2 CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI7; Ind1 Ext. Ind8 CY14B101I 1Mb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind1 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind1 RTC2 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind1 CY14B101PA 1Mb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B512I 512Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind1 RTC2 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind1 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind1 STK14C88-5 256Kb; 5.0 V 35, 45 ns; x8; Mil5 CY14B256PA 256Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B256I 256Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 STK11C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil5 STK12C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil5 CY14B064PA 64Kb; 3.0 V 40 MHz SPI; Ind1 RTC2 CY14B064I 64Kb; 3.0 V 3.4 MHz I2C; Ind1 RTC2 64Kb - 256Kb 512Kb - 16Mb Parallel Parallel nvSRAM nvSRAM grade −40ºC to +85ºC clock 3 Open NAND flash interface 001-89686 Owner: MRAN Rev *P BUM: CNX −40ºC to +125ºC Military grade −55ºC to +125ºC 6 Low-pin-count 1 Industrial 4 AEC-Q100 7 2 Real-time 5 8 Higher Densities nvSRAM NDA Required Contact Sales Quad serial peripheral interface Extended Industrial grade −40ºC to +105ºC Nonvolatile RAM Roadmap Production Sampling Development Concept Status Availability QQYY QQYY 2 F-RAM Portfolio Low Power | High Endurance Processor Companion FM25H20/V20A 2Mb; H20: 2.7-3.6 V V20A: 2.0-3.6 V 40 MHz SPI; Ind2 CY15B102Q 2Mb; 2.0-3.6 V 25 MHz SPI; Auto E3 4Kb - 256Kb 512Kb - 8Mb LPC1 F-RAM Higher Densities F-RAM NDA Required Contact Sales CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind2 FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I2C; Ind2 , Auto A3 FM25V02A/W256 256Kb; V02A: 2.0-3.6 V W256: 2.7-5.5 V 40 MHz SPI; Ind2, Auto A3 FM24V02A/W256 FM33256 256Kb; V02A: 2.0-3.6 V 256Kb; 3.3V; 16 MHz SPI W256: 2.7-5.5 V Ind2; RTC5; Power Fail 3.4 MHz I2C; Ind2, Auto A3 Watchdog; Counter FM25V01A 128Kb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM24V01A 128Kb; 2.0-3.6 V 3.4 MHz I2C; Ind2, Auto A3 FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHz I2C; Ind2; RTC5; Power Fail; Watchdog; Counter FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E4 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I2C; Ind2, Auto E4 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHz I2C; Ind2; RTC5; Power Fail; Watchdog; Counter FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E4 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I2C; Ind2 , Auto A3 FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E4 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I2C; Ind2 , Auto A3 −40ºC to +125ºC clock 4 AEC-Q100 2 5 Real-time Low-pin-count Industrial grade −40ºC to +85ºC 3 AEC-Q100 −40ºC to +85ºC Owner: MRAN BUM: CNX Parallel F-RAM FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind2 FM25V10/VN10 FM24V10/VN10 1Mb; 2.0-3.6 V 1Mb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 3.4 MHz I2C; Ind2 , Auto A3 1 001-89686 Rev *P Wireless Memory Wireless Memory NDA Required Contact Sales FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind2 FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind2 CY15B101N 1Mb; 2.0-3.6 V 60 ns; x16; Auto A3 CY15B102N 2Mb; 2.0-3.6 V 60 ns; x16; Auto A3 FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind2 FM18W08 256Kb; 2.7-5.5 V 70 ns; x8; Ind2 FM1808B 256Kb; 5.0 V 70 ns; x8; Ind2 FM16W08 64Kb; 2.7-5.5 V 70 ns; x8; Ind2 Production Sampling Development Concept Status Availability Nonvolatile RAM Roadmap QQYY QQYY 3 nvSRAM Packages Family 32-pin SOIC 44-pin TSOP II 48-ball FBGA 48-pin SSOP 4Mb 8Mb 16Mb 28-pin SOIC 28-pin CDIP 28-pad LCC 64Kb 256Kb Density 8-pin SOIC 8-pin DFN 16-pin SOIC 1Mb Parallel 64Kb 256Kb 512Kb 1Mb 64Kb LPC 001-89686 Rev *P 165ball FBGA Wafer 256Kb 512Kb I2C 1Mb 48-pin 54-pin 60-ball TSOP I TSOPII FBGA Owner: MRAN BUM: CNX Nonvolatile RAM Roadmap 4 F-RAM Packages Family LPC I2C 8-pin SOIC 8-pin DFN 4Kb 16Kb 64Kb 128Kb 256Kb 512Kb 1Mb Density 001-89686 Rev *P 14-pin SOIC 28-pin SOIC 28-pin TSOP I 32-pin TSOP I 44-pin TSOP II 48-ball FBGA Wafer 2Mb 4Mb 4Kb 16Kb 64Kb 128Kb 256Kb 512Kb 1Mb 64Kb Processor Companion 256Kb Parallel 8-pin EIAJ 64Kb 256Kb 2Mb 4Mb 1Mb Owner: MRAN BUM: CNX Nonvolatile RAM Roadmap 5 1Mb Quad SPI nvSRAM Applications Block Diagram Computing and networking Industrial automation RAID storage VCAP2 1Mb Quad SPI nvSRAM Store Control 2 Features QSPI I/Os Quad SPI interface: 108 MHz Unlimited write endurance One million store cycles on power fail Data retention of 20 years at 85°C Operating voltages: 3.0 V, 1.8-V I/O Low standby (280-µA) and sleep (10-µA) currents Industrial temperature range: -40°C to +85°C Extended Industrial temperature range: -40°C to +105°C Integrated, high-accuracy real-time clock (RTC) Package: 16-SOIC Control Logic Store/Recall Control SRAM Array I/O Control Recall Software Command Detect XIN1 XOUT1 RTC VRTC HSB3 Availability Collateral Final Datasheet: CY14V101QS Sampling: Production: 1 2 001-89686 Rev *P 4 Power Control SONOS Array Owner: MRAN BUM: CNX Now Now Crystal connections External capacitor connection Nonvolatile RAM Roadmap 3 Hardware store busy 6