Cypress Roadmap: Asynchronous SRAMs Q1 2016 001-89684 Rev *L Owner: REUB BUM: OHP Asynchronous SRAM Roadmap Asynchronous SRAM Portfolio High Density | Wide Voltage Range | Automotive A, E1,2 | On-chip ECC3 4 Low-Power SRAM (MoBL®: More Battery Life) PowerSnooze™ Fast SRAM ECC3 Non-ECC ECC3 ECC3 Quad-SPI, ECC3 Other Densities NDA Required Contact Sales CY6218x 64Mb; 2.5, 3.0 V 55 ns; x8, x16 Ind5 Other Densities NDA Required Contact Sales Other Densities NDA Required Contact Sales Other Densities NDA Required Contact Sales CY6216x 16Mb; 1.8-5.0 V 45 ns; x8, x16, x32 Ind5, Auto E2 CY7S106x 16Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Ind5, Auto E2 CY6214x 4Mb; 1.8-5.0 V 45 ns; x8, x16 Ind5, Auto E2 CY7S104x 4Mb; 3.3 V 10 ns; x8, x16 Ind5, Auto E2 32Mb-128Mb Non-ECC CY7C107x 32Mb; 3.3 V 12 ns; x8, x16 Ind5 CY6217x 32Mb; 2.5, 3.0, 5.0 V 55 ns; x8, x16 Ind5 64Kb-1Mb 2Mb-16Mb CY7C106x 16Mb; 1.8, 3.3 V 10 ns; x8, x16, x32 Ind5 CY7C106x 16Mb; 1.8-5.0 V 10 ns; x8, x16, x32 Ind5, Auto E2 CY6216x 16Mb;1.8, 3.0, 5.0 V 45 ns; x8, x16 Ind5, Auto A1 CY7C105x 8Mb; 3.3 V 10 ns; x8, x16 Ind5 CY7C1012 12Mb; 3.3 V 10 ns; x24 Ind5 CY7C104x 4Mb; 3.3, 5.0 V 10 ns; x4, x8, x16 Ind5, Auto A1, E2, RH6 CY7C1034 6Mb; 3.3 V 10 ns; x24 Ind5 CY7C1010/11 2Mb; 3.3 V 10 ns; x8, x16 Ind5, Auto A1, E2 CY7C1024 3Mb; 3.3 V 10 ns; x24 Ind5 CY6213x 2Mb; 1.8, 2.5-5.0 V 45 ns; x8, x16 Ind5, Auto A1, E2 CY7C1020 512Kb; 2.6, 3.3, 5.0V 10 ns; x16 Ind5, Auto E2 CY7C1019/21/100x 1Mb; 2.6, 3.3, 5.0 V 10 ns; x4, x8, x16 Ind5, Auto A1, E22 CY6212x 1Mb; 1.8, 2.5-5.0 V 45 ns; x8, x16 Ind5, Auto A1, E2 CY7C185 64Kb; 5.0 V 15 ns; x8 Ind5 CY7C19x/1399 256Kb; 3.3, 5.0 V 10 ns; x4, x8 Ind5, Auto A1 CY6215x 8Mb; 1.8, 3.0, 2.5-5V 45 ns; x8, x16 Ind5, Auto A1, E2 CY7C104x 4Mb; 1.8-5.0 V 10 ns; x8, x16 Ind5, Auto E2 1 AEC-Q100 4 Fast 2 AEC-Q100 5 Industrial -40ºC to +85ºC -40ºC to +125ºC 3 Error-correcting code 001-89684 Rev *L Owner: REUB BUM: OHP Serial SRAM CY6214x 4Mb; 1.8, 3.0, 2.5-5V 45 ns; x8, x16 Ind5, Auto A1, E2 CY6264 64Kb; 5.0 V 55 ns, 70 ns; x8 Ind5 CY62256 256Kb; 1.8, 3.0, 5.0V 55 ns; x8 Ind5, Auto A1, E2 SRAM with low-power sleep mode grade -40ºC to +85ºC 6 Radiation hardened, military grade -55ºC to +125ºC Asynchronous SRAM Roadmap Production Sampling Development Concept Status Availability QQYY QQYY 2 Fast SRAM with ECC Applications Family Table Switches and routers IP phones Test equipment Automotive Computation servers Military and aerospace systems Features Density MPN Access Time 4Mb 16Mb CY7C104x CY7C106x 10 ns 10 ns Supply Current (Max. at 85ºC) 45 mA 110 mA Block Diagram Access time: 10 ns Multiple bus-width configurations: x8, x16 and x32 Wide operating voltage range: 1.8-5.0 V Available in industrial and automotive temperature grades Industry-standard, RoHS-compliant packages Error-correcting code (ECC) to detect/correct single-bit errors Bit-interleaving to avoid multi-bit errors Error indication (ERR) pin to indicate single-bit errors Fast SRAM with ECC SRAM Array ECC Encoder Input Buffer x8, x16, x32 18-23 Address Data ERR I/O Mux Address Decoder Sense Amps SRAM Array ECC Decoder Control Logic CE WE BHE1 BLE2 Availability Collateral Preliminary Datasheet: Sampling: Production: Contact Sales 1 001-89684 Rev *L OE Owner: REUB BUM: OHP Byte high enable Asynchronous SRAM Roadmap Now Now 2 Byte low enable 3 3 ® MoBL SRAM with ECC Applications Family Table Programmable logic controllers Handheld devices Multifunction printers Automotive Implantable medical devices Computation servers Features Density MPN 4Mb 16Mb CY6214x CY6216x Standby Current (Max. at 85ºC) 8.7 µA 16 µA Standby Current (Typ. at 25ºC) 3.7 µA 5.3 µA Block Diagram Standby current: 16 µA for 16Mb (see Family Table) Multiple bus-width configurations: x8, x16 and x32 Wide operating voltage range: 1.8-5.0 V Available in industrial and automotive temperature grades Industry-standard, RoHS-compliant packages Error-correcting code (ECC) to detect/correct single-bit errors Bit-interleaving to avoid multi-bit errors Error indication (ERR) pin to indicate single-bit errors MoBL®3 SRAM with ECC SRAM Array ECC Encoder Input Buffer x8, x16, x32 18-23 Address Address Decoder Data ERR I/O Mux Sense Amps SRAM Array ECC Decoder Control Logic CE Collateral WE BHE1 BLE2 Availability Preliminary Datasheet: Sampling: Production: Contact Sales 1 001-89684 Rev *L OE Owner: REUB BUM: OHP Byte high enable Asynchronous SRAM Roadmap Now Now 2 Byte low enable 3 More Battery Life 4 Fast SRAM With PowerSnooze™ Applications Family Table Programmable logic controllers Handheld devices Multifunction printers Automotive Computation servers Features Density MPN Access Time 4Mb 16Mb CY7S104x CY7S106x 10 ns 10 ns Block Diagram Access time: 10 ns or 12 ns (see Family Table) PowerSnooze™: Additional power-savings (deep-sleep) mode Deep-sleep current: 23 µA for 16Mb (see Family Table) Multiple bus-width configurations: x8, x16 and x32 Wide operating voltage range: 1.8-5.0 V Available in industrial and automotive temperature grades Industry-standard, RoHS-compliant packages Error-correcting code (ECC) to detect/correct single-bit errors Bit-interleaving to avoid multi-bit errors Fast SRAM with PowerSnooze™ ECC Encoder Input Buffer Data Address 20 x8, x16, x32 Address Decoder SRAM Array Power Management Block (Enables PowerSnooze) Collateral I/O Mux ERR DS1 Sense Amps ECC Decoder Control Logic CE OE WE BHE2 BLE3 Availability Preliminary Datasheet: Sampling: Production: Contact Sales 1 001-89684 Rev *L Deep Sleep Current (Max. at 85ºC) 15 µA 22 µA Owner: REUB BUM: OHP Deep sleep Asynchronous SRAM Roadmap Now Now 2 Byte high enable 3 Byte low enable 5