IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Straight Lead • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D IPAK (TO-251) DESCRIPTION D Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G D S S N-Channel MOSFET ORDERING INFORMATION Package IPAK (TO-251) SiHFU110-GE3 IRFU110PbF SiHFU110-E3 IRFU110 SiHFU110 Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V 4.3 2.7 A 17 0.2 W/°C EAS 75 mJ Repetitive Avalanche Currenta IAR 4.3 A Repetitive Avalanche Energya EAR 2.5 mJ Single Pulse Avalanche Energyb Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s PD 25 W dV/dt 5.5 V/ns TJ, Tstg - 55 to + 150 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 , IAS = 4.3 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 www.vishay.com 1 IRFU110, SiHFU110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient RthJA - - 110 Maximum Junction-to-Case (Drain) RthJC - - 5.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 250 - - 0.54 1.1 - - S - 180 - - 81 - - 15 - - - 8.3 - - 2.3 ID = 0.90 Ab VGS = 10 V VDS = 50 V, ID = 0.90 A μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 5.6 A, VDS = 80 V, see fig. 6 and 13b Gate-Drain Charge Qgd - - 3.8 Turn-On Delay Time td(on) - 6.9 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 50 V, ID = 5.6 A, Rg = 24 , RD = 8.4 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact - 16 - - 15 - - 9.4 - - 4.0 - - 6.0 - - - 1.5 - - 12 pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 1.5 A, VGS = 0 S Vb TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb - - 2.5 V - 100 200 ns - 0.44 0.88 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 IRFU110, SiHFU110 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFU110, SiHFU110 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 IRFU110, SiHFU110 Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 www.vishay.com 5 IRFU110, SiHFU110 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T Rg + - I AS V DD VDS 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91397 S10-2549-Rev. C, 08-Nov-10 IRFU110, SiHFU110 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig.14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91397. Document Number: 91397 S10-2549-Rev. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000