IRFU110, SiHFU110 Datasheet

IRFU110, SiHFU110
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• Straight Lead
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
100
RDS(on) ()
VGS = 10 V
0.54
Qg (Max.) (nC)
8.3
Qgs (nC)
2.3
Qgd (nC)
3.8
Configuration
Single
D
IPAK
(TO-251)
DESCRIPTION
D
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
G
D S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
IPAK (TO-251)
SiHFU110-GE3
IRFU110PbF
SiHFU110-E3
IRFU110
SiHFU110
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
4.3
2.7
A
17
0.2
W/°C
EAS
75
mJ
Repetitive Avalanche Currenta
IAR
4.3
A
Repetitive Avalanche Energya
EAR
2.5
mJ
Single Pulse Avalanche Energyb
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
PD
25
W
dV/dt
5.5
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 , IAS = 4.3 A (see fig. 12).
c. ISD  5.6 A, dI/dt  75 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91397
S10-2549-Rev. C, 08-Nov-10
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IRFU110, SiHFU110
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Case (Drain)
RthJC
-
-
5.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
100
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.63
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
-
-
± 100
VDS = 100 V, VGS = 0 V
-
-
25
VDS = 80 V, VGS = 0 V, TJ = 125 °C
-
-
250
-
-
0.54

1.1
-
-
S
-
180
-
-
81
-
-
15
-
-
-
8.3
-
-
2.3
ID = 0.90 Ab
VGS = 10 V
VDS = 50 V, ID = 0.90 A
μA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b
Gate-Drain Charge
Qgd
-
-
3.8
Turn-On Delay Time
td(on)
-
6.9
-
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDD = 50 V, ID = 5.6 A,
Rg = 24 , RD = 8.4 , see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
-
16
-
-
15
-
-
9.4
-
-
4.0
-
-
6.0
-
-
-
1.5
-
-
12
pF
nC
ns
D
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 1.5 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb
-
-
2.5
V
-
100
200
ns
-
0.44
0.88
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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Document Number: 91397
S10-2549-Rev. C, 08-Nov-10
IRFU110, SiHFU110
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91397
S10-2549-Rev. C, 08-Nov-10
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFU110, SiHFU110
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91397
S10-2549-Rev. C, 08-Nov-10
IRFU110, SiHFU110
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91397
S10-2549-Rev. C, 08-Nov-10
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IRFU110, SiHFU110
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
Rg
+
-
I AS
V DD
VDS
10 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91397
S10-2549-Rev. C, 08-Nov-10
IRFU110, SiHFU110
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig.14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91397.
Document Number: 91397
S10-2549-Rev. C, 08-Nov-10
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000